IRFS7534TRL7PP

IRFS7534TRL7PP
Mfr. #:
IRFS7534TRL7PP
メーカー:
Infineon / IR
説明:
MOSFET MOSFET N CH 60V 240A D2PAK
ライフサイクル:
メーカー新製品
データシート:
IRFS7534TRL7PP データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
IRFS7534TRL7PP 詳しくは
製品属性
属性値
メーカー:
インフィニオン
製品カテゴリ:
MOSFET
JBoss:
Y
テクノロジー:
Si
取り付けスタイル:
SMD / SMT
パッケージ/ケース:
TO-263-7
チャネル数:
1 Channel
トランジスタの極性:
Nチャネル
Vds-ドレイン-ソース間降伏電圧:
60 V
Id-連続ドレイン電流:
240 A
Rds On-ドレイン-ソース抵抗:
1.6 mOhms
Vgs th-ゲート-ソースしきい値電圧:
3.7 V
Vgs-ゲート-ソース間電圧:
20 V
Qg-ゲートチャージ:
200 nC
最低動作温度:
- 55 C
最高作動温度:
+ 175 C
Pd-消費電力:
290 W
構成:
独身
商標名:
StrongIRFET
包装:
リール
高さ:
4.4 mm
長さ:
10 mm
トランジスタタイプ:
1 N-Channel
幅:
9.25 mm
ブランド:
インフィニオン/ IR
フォワード相互コンダクタンス-最小:
190 S
立ち下がり時間:
86 ns
製品タイプ:
MOSFET
立ち上がり時間:
120 ns
ファクトリーパックの数量:
800
サブカテゴリ:
MOSFET
典型的なターンオフ遅延時間:
195 ns
典型的なターンオン遅延時間:
140 ns
パーツ番号エイリアス:
SP001573434
単位重量:
0.056438 oz
Tags
IRFS7534T, IRFS7534, IRFS753, IRFS75, IRFS7, IRFS, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Yang
MOSFET Transistor, N Channel, 240 A, 60 V, 0.0016 ohm, 10 V, 3.7 V RoHS Compliant: Yes
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a 7-Pin D2-Pak package, D2PAK7P, RoHS
***ure Electronics
Single N-Channel 60 V 1.95 mOhm 200 nC HEXFET® Power Mosfet - D2PAK-7
*** Electronic Components
Darlington Transistors MOSFET MOSFET N CH 60V 240A D2PAK
*** Stop Electro
Power Field-Effect Transistor, 240A I(D), 60V, 1.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB
***ineon
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability
*** Source Electronics
Trans MOSFET N-CH Si 60V 338A 7-Pin(6+Tab) D2PAK T/R / MOSFET N CH 60V 240A D2PAK
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a 7-Pin D2-Pak package, D2PAK7P, RoHS
***roFlash
Single N-Channel 60 V 1.4 mOhm 354 nC HEXFET® Power Mosfet - D2PAK-7
***(Formerly Allied Electronics)
MOSFET, 60V,240A, 1.4mOhm, 236nC, D2PAK7 Pin
***ineon
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability
***nell
MOSFET, N-CH, 60V, 338A, TO-263-7; Transistor Polarity: N Channel; Continuous Drain Current Id: 338A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.00115ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7V
***ark
Mosfet Transistor, N Channel, 195 A, 60 V, 0.00165 Ohm, 10 V, 3.7 V
*** Source Electronics
MOSFET N CH 60V 195A D2PAK / Trans MOSFET N-CH Si 60V 295A 3-Pin(2+Tab) D2PAK T/R
***trelec
Operating temperature: -55...+175 °C Housing type: D2PAK Polarity: N Power dissipation: 375 W
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ure Electronics
Single N-Channel 60 V 2 mOhm 274 nC HEXFET® Power Mosfet - D2PAK
***(Formerly Allied Electronics)
MOSFET,60V, 195A, 2.0mOhm, 274 nC, D2PAK
*** Stop Electro
Power Field-Effect Transistor, 195A I(D), 60V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ineon
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability
***nell
MOSFET, N CH, 60V, 195A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 195A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.00165ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7V
***icroelectronics
N-channel 60 V, 1.7 mOhm typ., 180 A STripFET F6 Power MOSFET in H2PAK-6 package
***r Electronics
Power Field-Effect Transistor, 180A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ical
Trans MOSFET N-CH 60V 180A 7-Pin(6+Tab) H2PAK T/R
***ure Electronics
N-Channel 60 V 2.4 mOhm SMT STripFET VI DeepGate Power Mosfet - H2PAK-6
***icroelectronics SCT
Power MOSFETs, 60V, 180A, H2PAK-6, Tape and Reel
***r Electronics
Power Field-Effect Transistor, 180A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***icroelectronics
Automotive-grade N-channel 60 V, 1.6 mOhm typ., 180 A STripFET F6 Power MOSFET in H2PAK-6 package
***et
Trans MOSFET N-CH 60V 180A 6-Pin H2PAK T/R
***icroelectronics SCT
Automotive Power Discrete, 60V, 180A, H2PAK-6, Tape and Reel
***el Electronic
CAP CERAMIC DISK RDL LONG LEADS
***(Formerly Allied Electronics)
IRFS3006-7PPBF N-channel MOSFET Transistor; 293 A; 60 V; 7-Pin D2PAK
***ure Electronics
Single N-Channel 60 V 2.1 mOhm 200 nC HEXFET® Power Mosfet - D2PAK-7
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7-Pin package, D2PAK7P, RoHS
***roFlash
Power Field-Effect Transistor, 240A I(D), 60V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:240A; On Resistance Rds(On):0.0015Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes
***ineon
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: Battery Operated Drive
***ure Electronics
FDB0170N607L Series 60 V 300 A 1.4 mOhm N-Channel Power Trench Mosfet - D2PAK-7
***emi
N-Channel PowerTrench® MOSFET 60V, 300A, 1.4mΩ
***r Electronics
Power Field-Effect Transistor, 300A I(D), 60V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB
***el Electronic
Chip Resistor - Surface Mount 160kOhm 0402 (1005 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 160K OHM 1% 1/10W 0402
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been especially tailored to minimize the on-state resistance while maintaining superior ruggedness and switching performance for industrial applications.
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
Infineon Automatic Opening Systems
Infineon Automatic Opening Systems incorporate smart sensors, motor controls, supplies and battery management to automate sliding, swing or garage doors, sun blinds and gates. When automated, these doors manage opening actions, avoid unintentional opening, control speed and torque, detect objects along paths and other functions.Learn More
StrongIRFET™ Power MOSFETs
Infineon StrongIRFET™ Power MOSFET family are optimized for low RDS(on) and high current capability. These devices are ideal for low-frequency applications requiring performance and ruggedness. These MOSFETs have the highest current carrying capability in the industry. This feature leads to increased robustness and reliability for high power density applications which require high efficiency and reliability. 
モデル メーカー 説明 ストック 価格
IRFS7534TRL7PP
DISTI # IRFS7534TRL7PPTR-ND
Infineon Technologies AGMOSFET N CH 60V 240A D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)
On Order
  • 800:$1.7078
IRFS7534TRL7PP
DISTI # IRFS7534TRL7PPCT-ND
Infineon Technologies AGMOSFET N CH 60V 240A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Temporarily Out of Stock
  • 100:$2.4039
  • 10:$2.9320
  • 1:$3.2800
IRFS7534TRL7PP
DISTI # IRFS7534TRL7PPDKR-ND
Infineon Technologies AGMOSFET N CH 60V 240A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Temporarily Out of Stock
  • 100:$2.4039
  • 10:$2.9320
  • 1:$3.2800
IRFS7534TRL7PP
DISTI # IRFS7534TRL7PP
Infineon Technologies AGTrans MOSFET N-CH 60V 255A 7-Pin D2PAK T/R - Tape and Reel (Alt: IRFS7534TRL7PP)
RoHS: Compliant
Min Qty: 800
Container: Reel
Americas - 0
  • 800:$1.1929
  • 1600:$1.1499
  • 3200:$1.1079
  • 4800:$1.0709
  • 8000:$1.0519
IRFS7534TRL7PP
DISTI # 49X0792
Infineon Technologies AGMOSFET Transistor, N Channel, 240 A, 60 V, 0.0016 ohm, 10 V, 3.7 V RoHS Compliant: Yes0
  • 1:$2.7400
  • 10:$2.3300
  • 25:$2.2300
  • 50:$2.1200
  • 100:$2.0200
  • 250:$1.9200
  • 500:$1.7200
IRFS7534TRL7PP
DISTI # 942-IRFS7534TRL7PP
Infineon Technologies AGMOSFET MOSFET N CH 60V 240A D2PAK
RoHS: Compliant
27
  • 1:$2.7400
  • 10:$2.3300
  • 100:$2.0200
  • 250:$1.9200
  • 500:$1.7200
  • 800:$1.4500
IRFS7534TRL7PP
DISTI # 8208861P
Infineon Technologies AGMOSFET 60V 240A STRONGIRFET D2PAK-7, RL292
  • 20:£2.2450
IRFS7534TRL7PP
DISTI # 2406525
Infineon Technologies AGMOSFET, N CH, 60V, 240A, TO-263-7
RoHS: Compliant
0
  • 1:$4.3400
  • 10:$3.6900
  • 100:$3.2000
  • 250:$3.0400
  • 500:$2.7200
  • 800:$2.3500
IRFS7534TRL7PP
DISTI # 2406525
Infineon Technologies AGMOSFET, N CH, 60V, 240A, TO-263-7
RoHS: Compliant
0
  • 1:£2.3600
  • 10:£1.7800
  • 100:£1.5500
  • 250:£1.4600
  • 500:£1.2800
画像 モデル 説明
LM5060MM/NOPB

Mfr.#: LM5060MM/NOPB

OMO.#: OMO-LM5060MM-NOPB

Hot Swap Voltage Controllers Hi Side OR-ing FET Cntlr
DRV8302DCA

Mfr.#: DRV8302DCA

OMO.#: OMO-DRV8302DCA

Motor / Motion / Ignition Controllers & Drivers 3-PHASE BRUSHLESS MOTOR PRE-DRIVER
SMBJ48A-13-F

Mfr.#: SMBJ48A-13-F

OMO.#: OMO-SMBJ48A-13-F

TVS Diodes / ESD Suppressors 600W 48.0V
DFLS1100-7

Mfr.#: DFLS1100-7

OMO.#: OMO-DFLS1100-7

Schottky Diodes & Rectifiers 1.0A 100V
SDR0805-101KL

Mfr.#: SDR0805-101KL

OMO.#: OMO-SDR0805-101KL

Fixed Inductors 100uH 10% SMD 0805
09062032911

Mfr.#: 09062032911

OMO.#: OMO-09062032911

DIN 41612 Connectors 3P 15A MALE R/A SLDR
SMBJ48A-13-F

Mfr.#: SMBJ48A-13-F

OMO.#: OMO-SMBJ48A-13-F-DIODES

TVS DIODE 48V 77.4V SMB
LM5060MM/NOPB

Mfr.#: LM5060MM/NOPB

OMO.#: OMO-LM5060MM-NOPB-TEXAS-INSTRUMENTS

Hot Swap Voltage Controllers Hi Side OR-ing FET Cntl
09062032911

Mfr.#: 09062032911

OMO.#: OMO-09062032911-HARTING

DIN 41612 Connectors 3P 15A MALE R/A SLDR
DFLS1100-7

Mfr.#: DFLS1100-7

OMO.#: OMO-DFLS1100-7-DIODES

DIODE SCHOTTKY 100V POWERDI123
可用性
ストック:
762
注文中:
2745
数量を入力してください:
IRFS7534TRL7PPの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格(USD)
単価
小計金額
1
$2.74
$2.74
10
$2.32
$23.20
100
$2.01
$201.00
250
$1.91
$477.50
500
$1.71
$855.00
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