2SK4100LS

Mfr. #:: 2SK4100LS
メーカー:: Rochester Electronics, LLC
説明:: Power Field-Effect Transistor, 6A I(D), 650V, 1.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
ライフサイクル:: メーカー新製品
データシート:: 2SK4100LS データシート
配達:: DHL FedEx Ups TNT EMS
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ECAD Model:

製品属性
属性値

Tags: 2SK4100L, 2SK4100, 2SK410, 2SK41, 2SK4, 2SK

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

2SK4100LS 説明

***r Electronics: Power Field-Effect Transistor, 6A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***p One Stop: Trans MOSFET N-CH 650V 6A 3-Pin(3+Tab) TO-220FI

***nell: MOSFET, N CH 650V 6A TO220; Transistor Type:MOSFET; Transistor Polarity:N; Typ Voltage Vds:650V; Cont Current Id:6A; On State Resistance:1.35ohm; Voltage Vgs Rds on Measurement:10V; Typ Voltage Vgs th:5V; Case Style:TO-220FI; Termination Type:Through Hole; Power Dissipation:2W; Transistor Case Style:TO-220FI

***ical: Trans MOSFET N-CH 650V 7.2A 3-Pin(2+Tab) DPAK T/R

***ark: Mosfet, N-Ch, 650V, 7.2A, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:7.2A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.86Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes

***ineon: CoolMOS CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600V, 650V and 700V CoolMOS CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets. | Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV

***ineon SCT: Single N-Channel 650V 650 mOhm 23 nC CoolMOS Power Mosfet - TO-252-3, PG-TO252-3, RoHS

***ark: Mosfet, N-Ch, 650V, 10.1A, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:10.1A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.54Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes

***ineon: CoolMOS CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600V, 650V and 700V CoolMOS CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets. | Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV

***itex: Transistor: N-MOSFET; unipolar; 650V; 10.1A; 0.65ohm; 28W; -40+150 deg.C; THT; TO220F

***ark: Mosfet, N-Ch, 650V, 10.1A, To-220Fp-3; Transistor Polarity:n Channel; Continuous Drain Current Id:10.1A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.54Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes

***ineon: CoolMOS CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600V, 650V and 700V CoolMOS CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets. | Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV

***i-Key: MOSFET N-CH 650V 7A TO-220

***inecomponents.com: 650V N-Channel Advance Q-FET C-Series

***ser: MOSFETs N-CH/650V/7A/QFET

***-Wing Technology: N-CHANNEL POWER MOSFET

***el Nordic: Contact for details

***icroelectronics: N-channel 650 V, 0.56 Ohm, 7 A MDmesh(TM) V Power MOSFET in IPAK

***r Electronics: Power Field-Effect Transistor, 7A I(D), 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251

***nell: MOSFET, N CH, 650V, 7A, IPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.56ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 70W; Transistor Case Style: TO-251; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015)

***emi: N-Channel Power MOSFET, SuperFET® II, FAST, 600 V, 4.5 A, 900 mΩ, DPAK

***ure Electronics: FCD900N60Z Series 600 V 4.5 A N-Channel SuperFET® II Mosfet -TO-252, (D-Pak)

*** Stop Electro: Power Field-Effect Transistor, 4.5A I(D), 600V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***rchild Semiconductor: SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

Market price

モデル	メーカー	説明	ストック	価格
2SK4100LS-T-MG5 DISTI # 2SK4100LS-T-MG5	ON Semiconductor	- Bulk (Alt: 2SK4100LS-T-MG5) Min Qty: 246 Container: Bulk	Americas - 0	1230:$1.1900 2460:$1.1900 246:$1.2900 492:$1.2900 738:$1.2900
2SK4100LS-T-MG5	ON Semiconductor	SWITCHING DEVICE RoHS: Not Compliant	28972	1000:$1.3400 500:$1.4100 100:$1.4700 25:$1.5300 1:$1.6500
2SK4100LS	SANYO Semiconductor Co Ltd	Power Field-Effect Transistor, 6A I(D), 650V, 1.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant	958	1000:$0.4000 500:$0.4200 100:$0.4300 25:$0.4500 1:$0.4900

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2SK4100LS

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes