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| モデル | メーカー | 説明 | ストック | 価格 |
|---|---|---|---|---|
| BSC883N03LSGATMA1 DISTI # BSC883N03LSGATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 34V 17A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 4910In Stock |
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| BSC883N03LSGATMA1 DISTI # BSC883N03LSGATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 34V 17A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| BSC883N03LSGATMA1 DISTI # BSC883N03LSGATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 34V 17A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | Temporarily Out of Stock |
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| BSC883N03LS G DISTI # BSC883N03LS G | Infineon Technologies AG | Trans MOSFET N-CH 34V 17A 8-Pin TDSON EP (Alt: BSC883N03LS G) RoHS: Compliant Min Qty: 5000 | Asia - 0 | |
| BSC883N03LSGXT DISTI # BSC883N03LSGATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 34V 17A 8-Pin TDSON EP - Tape and Reel (Alt: BSC883N03LSGATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 0 |
|
| BSC883N03LSGATMA1 DISTI # 97Y1252 | Infineon Technologies AG | MOSFET, N-CH, 34V, 98A, PG-TDSON-8,Transistor Polarity:N Channel,Continuous Drain Current Id:98A,Drain Source Voltage Vds:34V,On Resistance Rds(on):0.0032ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V,Power RoHS Compliant: Yes | 4767 |
|
| BSC883N03LSGATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 17A I(D), 34V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 5000 |
|
| BSC883N03LS G | Infineon Technologies AG | RoHS: Not Compliant | 5000 |
|
| BSC883N03LSG | Infineon Technologies AG | Power Field-Effect Transistor, 17A I(D), 34V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 14999 |
|
| BSC883N03LS G DISTI # 726-BSC883N03LSG | Infineon Technologies AG | MOSFET N-Ch 34V 98A TDSON-8 RoHS: Compliant | 4969 |
|
| BSC883N03LSGATMA1 DISTI # 2617421 | Infineon Technologies AG | MOSFET, N-CH, 34V, 98A, PG-TDSON-8 RoHS: Compliant | 4767 |
|
| BSC883N03LSGATMA1 DISTI # 2617421 | Infineon Technologies AG | MOSFET, N-CH, 34V, 98A, PG-TDSON-8 RoHS: Compliant | 4767 |
|
| 画像 | モデル | 説明 |
|---|---|---|
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Mfr.#: BSC883N03LSGXT OMO.#: OMO-BSC883N03LSGXT-1190 |
Trans MOSFET N-CH 34V 17A 8-Pin TDSON EP - Tape and Reel (Alt: BSC883N03LSGATMA1) |
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Mfr.#: BSC882N03MSG OMO.#: OMO-BSC882N03MSG-1190 |
Power Field-Effect Transistor, 22A I(D), 34V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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Mfr.#: BSC882N03MSGATMA1 |
MOSFET N-CH 34V 22A TDSON-8 |
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Mfr.#: BSC886N03LSG OMO.#: OMO-BSC886N03LSG-1190 |
Power Field-Effect Transistor, 13A I(D), 30V, 0.0092ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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Mfr.#: BSC889N03LSG E8178 OMO.#: OMO-BSC889N03LSG-E8178-1190 |
ブランドニューオリジナル |
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Mfr.#: BSC889N03LSGE8178 OMO.#: OMO-BSC889N03LSGE8178-1190 |
ブランドニューオリジナル |
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Mfr.#: BSC889N03MS OMO.#: OMO-BSC889N03MS-1190 |
ブランドニューオリジナル |
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Mfr.#: BSC889N03MSGATMA1 |
MOSFET N-CH 30V 44A TDSON-8 |
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Mfr.#: BSC882N03LS G OMO.#: OMO-BSC882N03LS-G-317 |
RF Bipolar Transistors MOSFET N-Ch 34V 100A SON-8 |
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Mfr.#: BSC883N03LS G OMO.#: OMO-BSC883N03LS-G-317 |
RF Bipolar Transistors MOSFET N-Ch 34V 98A TDSON-8 |