DMN601DMK-7

Mfr. #:: DMN601DMK-7
メーカー:: Diodes Incorporated
説明:: Darlington Transistors MOSFET Dual N-Channel
ライフサイクル:: メーカー新製品
データシート:: DMN601DMK-7 データシート
配達:: DHL FedEx Ups TNT EMS
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ECAD Model:
詳しくは:: DMN601DMK-7 詳しくは

製品属性
属性値

メーカー: 組み込まれたダイオード

製品カテゴリ: FET-アレイ

シリーズ: DMN60

包装: Digi-ReelR代替パッケージ

取り付けスタイル: SMD / SMT

パッケージ-ケース: SOT-23-6

テクノロジー: Si

作動温度: -55°C ~ 150°C (TJ)

取付タイプ: 表面実装

チャネル数: 2 Channel

サプライヤー-デバイス-パッケージ: SOT-26

構成: デュアル

FETタイプ: 2 N-Channel (Dual)

パワーマックス: 700mW

トランジスタタイプ: 2 N-Channel

Drain-to-Source-Voltage-Vdss: 60V

入力-静電容量-Ciss-Vds: 50pF @ 25V

FET機能: ロジックレベルゲート

Current-Continuous-Drain-Id-25°C: 510mA

Rds-On-Max-Id-Vgs: 2.4 Ohm @ 200mA, 10V

Vgs-th-Max-Id: 2.5V @ 1mA

ゲートチャージ-Qg-Vgs: 304nC @ 4.5V

Pd-電力損失: 225 mW

最高作動温度: + 150 C

最低作動温度: - 65 C

立ち下がり時間: 9.9 ns

立ち上がり時間: 3.4 ns

Vgs-Gate-Source-Voltage: 20 V

Id-連続-ドレイン-電流: 305 mA

Vds-ドレイン-ソース-ブレークダウン-電圧: 60 V

Vgs-th-Gate-Source-Threshold-Voltage: 1.4 V

Rds-On-Drain-Source-Resistance: 4 Ohms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 15.7 ns

典型的なターンオン遅延時間: 3.9 ns

Qg-Gate-Charge: 304 nC

フォワード-相互コンダクタンス-最小: 100 mS

チャネルモード: 強化

Tags: DMN601DMK-7, DMN601DM, DMN601D, DMN601, DMN60, DMN6, DMN

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

DMN601DMK-7 説明

***ure Electronics: DMN601 Series 60 V 2.4 Ohm Dual N-Channel Enhancement Mode Mosfet - SOT-23-6

***ical: Trans MOSFET N-CH 60V 0.51A Automotive 6-Pin SOT-26 T/R

***ied Electronics & Automation: Dual N-Channel Enhancement MOSFET SOT-26

***ser: MOSFETs - Low Threshold Voltage Dual N-Channel

DMN601DMK-7 詳しくは

Power MOSFETs: Diodes Inc. continues to expand its portfolio of power MOSFETs with new N- and P-channel devices with breakdown voltages up to 450V and a wide range of package options. The Diodes Inc. MOSFET portfolio is ideally suited to a range of applications, including DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive.

Market price

モデル	メーカー	説明	ストック	価格
DMN601DMK-7 DISTI # DMN601DMKDITR-ND	Diodes Incorporated	MOSFET 2N-CH 60V 0.51A SOT26 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	3000:$0.1535
DMN601DMK-7 DISTI # DMN601DMKDICT-ND	Diodes Incorporated	MOSFET 2N-CH 60V 0.51A SOT26 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.1734 500:$0.2243 100:$0.3059 10:$0.4080 1:$0.4800
DMN601DMK-7 DISTI # DMN601DMKDIDKR-ND	Diodes Incorporated	MOSFET 2N-CH 60V 0.51A SOT26 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.1734 500:$0.2243 100:$0.3059 10:$0.4080 1:$0.4800
DMN601DMK7 DISTI # DMN601DMK-7	Diodes Incorporated	Trans MOSFET N-CH 60V 0.51A 6-Pin SOT-26 T/R - Tape and Reel (Alt: DMN601DMK-7) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.1349 6000:$0.1289 12000:$0.1229 18000:$0.1169 30000:$0.1139
DMN601DMK-7 DISTI # 70550684	Diodes Incorporated	Dual N-Channel Enhancement MOSFET SOT-26 RoHS: Compliant	0	100:$0.3200 300:$0.2800 1500:$0.2500 3000:$0.2200
DMN601DMK-7 DISTI # 621-DMN601DMK-7	Diodes Incorporated	MOSFET Dual N-Channel RoHS: Compliant	0	1:$0.4000 10:$0.3250 100:$0.1990 1000:$0.1540 3000:$0.1310

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