FDFME3N311ZT

FDFME3N311ZT
Mfr. #:
FDFME3N311ZT
メーカー:
ON Semiconductor / Fairchild
説明:
MOSFET Int. NCh PowerTrench MOSFET & Sch. Diode
ライフサイクル:
メーカー新製品
データシート:
FDFME3N311ZT データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
製品属性
属性値
メーカー:
オン・セミコンダクター
製品カテゴリ:
MOSFET
JBoss:
Y
テクノロジー:
Si
取り付けスタイル:
SMD / SMT
パッケージ/ケース:
MicroFET-6
チャネル数:
1 Channel
トランジスタの極性:
Nチャネル
Vds-ドレイン-ソース間降伏電圧:
30 V
Id-連続ドレイン電流:
1.6 A
Rds On-ドレイン-ソース抵抗:
299 mOhms
Vgs-ゲート-ソース間電圧:
12 V
最低動作温度:
- 55 C
最高作動温度:
+ 150 C
Pd-消費電力:
1.1 W
構成:
独身
チャネルモード:
強化
商標名:
PowerTrench
包装:
リール
高さ:
0.75 mm
長さ:
2 mm
製品:
MOSFET小信号
シリーズ:
FDFME3N311ZT
トランジスタタイプ:
1 N-Channel
タイプ:
パワートレンチMOSFET
幅:
2 mm
ブランド:
オン・セミコンダクター/フェアチャイルド
フォワード相互コンダクタンス-最小:
2.8 S
立ち下がり時間:
2.8 ns
製品タイプ:
MOSFET
立ち上がり時間:
16 ns
ファクトリーパックの数量:
5000
サブカテゴリ:
MOSFET
典型的なターンオフ遅延時間:
35 ns
典型的なターンオン遅延時間:
12 ns
単位重量:
0.000889 oz
Tags
FDFME, FDFM, FDF
Service Guarantees

We guarantee 100% customer satisfaction.

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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
Integrated N-Channel PowerTrench® MOSFET and Schottky Diode 30 V, 1.8 A, 299 mΩ
***ark
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:1.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.299ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:0.5W ;RoHS Compliant: Yes
***rchild Semiconductor
This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra-portable applications. It features a MOSFET with low input capacitance, total gate charge and on-state resistance. An independently connected schottky diode with low forward voltage and reverse leakage current to maximize boost efficiency.The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for it's physical size and is well suited to switching and linear mode applications.
モデル メーカー 説明 ストック 価格
FDFME3N311ZT
DISTI # FDFME3N311ZTTR-ND
ON SemiconductorMOSFET N-CH 30V 1.8A 6MICROFET
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
Limited Supply - Call
  • 5000:$0.2525
FDFME3N311ZT
DISTI # FDFME3N311ZTCT-ND
ON SemiconductorMOSFET N-CH 30V 1.8A 6MICROFET
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Limited Supply - Call
    FDFME3N311ZT
    DISTI # FDFME3N311ZTDKR-ND
    ON SemiconductorMOSFET N-CH 30V 1.8A 6MICROFET
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    Limited Supply - Call
      FDFME3N311ZT
      DISTI # FDFME3N311ZT
      ON SemiconductorTrans MOSFET N-CH 30V 1.8A 6-Pin MicroFET T/R (Alt: FDFME3N311ZT)
      RoHS: Compliant
      Min Qty: 5000
      Container: Tape and Reel
      Europe - 0
      • 5000:€0.4469
      • 10000:€0.3479
      • 20000:€0.2889
      • 30000:€0.2429
      • 50000:€0.2249
      FDFME3N311ZT
      DISTI # 73R3644
      ON SemiconductorMOSFET Transistor,Transistor Polarity:N Channel,Continuous Drain Current Id:1.6A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.299ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1V,Power Dissipation Pd:500mW RoHS Compliant: Yes0
      • 1:$0.6400
      • 25:$0.5270
      • 50:$0.4340
      • 100:$0.3400
      • 250:$0.3170
      • 500:$0.2950
      • 1000:$0.2720
      FDFME3N311ZT
      DISTI # 64R3000
      ON SemiconductorMOSFET Transistor, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:1.6A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.299ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1V,No. of Pins:6Pins RoHS Compliant: Yes0
      • 1:$0.2860
      • 5000:$0.2840
      • 10000:$0.2500
      • 25000:$0.2250
      • 50000:$0.2130
      FDFME3N311ZTFairchild Semiconductor CorporationSmall Signal Field-Effect Transistor, 1.6A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
      RoHS: Compliant
      60662
      • 1000:$0.2500
      • 500:$0.2600
      • 100:$0.2700
      • 25:$0.2900
      • 1:$0.3100
      FDFME3N311ZT
      DISTI # 1813536
      ON SemiconductorMOSFET Transistor
      RoHS: Compliant
      0
      • 5000:£0.2410
      FDFME3N311ZT
      DISTI # 1813536
      ON SemiconductorMOSFET Transistor
      RoHS: Compliant
      0
      • 5000:$0.9780
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      LP3965EMP-ADJ/NOPB

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      OMO.#: OMO-LP3965EMP-ADJ-NOPB-TEXAS-INSTRUMENTS

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      Mfr.#: NCP45560IMNTWG-H

      OMO.#: OMO-NCP45560IMNTWG-H-ON-SEMICONDUCTOR

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      8P34S1106NLGI

      Mfr.#: 8P34S1106NLGI

      OMO.#: OMO-8P34S1106NLGI-INTEGRATED-DEVICE-TECH

      Clock Drivers & Distribution 1:6 LVDS Output 1.8V Fanout Buffe
      可用性
      ストック:
      776
      注文中:
      2759
      数量を入力してください:
      FDFME3N311ZTの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
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