IPSA70R600P7SAKMA1

IPSA70R600P7SAKMA1
Mfr. #:
IPSA70R600P7SAKMA1
メーカー:
Infineon Technologies
説明:
MOSFET CONSUMER
ライフサイクル:
メーカー新製品
データシート:
IPSA70R600P7SAKMA1 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
製品属性
属性値
メーカー:
インフィニオン
製品カテゴリ:
MOSFET
JBoss:
Y
テクノロジー:
Si
取り付けスタイル:
スルーホール
パッケージ/ケース:
PG-TO-251-3
チャネル数:
1 Channel
トランジスタの極性:
Nチャネル
Vds-ドレイン-ソース間降伏電圧:
700 V
Id-連続ドレイン電流:
8.5 A
Rds On-ドレイン-ソース抵抗:
490 mOhms
Vgs th-ゲート-ソースしきい値電圧:
2.5 V
Vgs-ゲート-ソース間電圧:
16 V
Qg-ゲートチャージ:
10.5 nC
最低動作温度:
- 40 C
最高作動温度:
+ 150 C
Pd-消費電力:
43.1 W
構成:
独身
チャネルモード:
強化
包装:
チューブ
トランジスタタイプ:
1 N-Channel
ブランド:
インフィニオンテクノロジーズ
立ち下がり時間:
23 ns
製品タイプ:
MOSFET
立ち上がり時間:
5.5 ns
ファクトリーパックの数量:
1500
サブカテゴリ:
MOSFET
典型的なターンオフ遅延時間:
63 ns
典型的なターンオン遅延時間:
14 ns
パーツ番号エイリアス:
IPSA70R600P7S SP001664806
Tags
IPSA70R6, IPSA7, IPSA, IPS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 700V 8.5A 3-Pin(3+Tab) TO-251 Tube
***ark
Mosfet, N-Ch, 700V, 8.5A, To-251; Transistor Polarity:n Channel; Continuous Drain Current Id:8.5A; Drain Source Voltage Vds:700V; On Resistance Rds(On):0.49Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ineon
Summary of Features: Extremely low FOM R DS(on) x E oss; lower Q g, E on and E off; Highly performant technology Low switching losses (E oss) Highly efficient Excellent thermal behavior; Allowing high speed switching; Integrated protection Zener diode; Optimized V (GS)th of 3V with very narrow tolerance of 0.5V; Finely graduated portfolio | Benefits: Cost competitive technology; Up to 2.4% efficiency gain and 12K lower device temperature compared to C6 technology; Further efficiency gain at higher switching speed; Supporting less magnetic size with lower BOM costs; High ESD ruggedness up to HBM Class 2 level; Easy to drive and design-in; Enabler for smaller form factors and high power density designs; Excellent choice in selecting the best fitting product | Target Applications: Charger; Adapter; TV; Lighting; Audio; Aux power
モデル メーカー 説明 ストック 価格
IPSA70R600P7SAKMA1
DISTI # IPSA70R600P7SAKMA1-ND
Infineon Technologies AGMOSFET COOLMOS 700V TO251-3
RoHS: Compliant
Min Qty: 1
Container: Tube
1835In Stock
  • 6000:$0.3050
  • 3000:$0.3276
  • 1500:$0.3615
  • 100:$0.5717
  • 25:$0.7004
  • 10:$0.7460
  • 1:$0.8500
IPSA70R600P7SAKMA1
DISTI # IPSA70R600P7SAKMA1
Infineon Technologies AGCONSUMER - Rail/Tube (Alt: IPSA70R600P7SAKMA1)
RoHS: Compliant
Min Qty: 1500
Container: Tube
Americas - 3000
  • 15000:$0.2649
  • 7500:$0.2719
  • 4500:$0.2789
  • 3000:$0.2859
  • 1500:$0.2939
IPSA70R600P7SAKMA1
DISTI # IPSA70R600P7SAKMA1
Infineon Technologies AGCONSUMER - Bulk (Alt: IPSA70R600P7SAKMA1)
Min Qty: 1250
Container: Bulk
Americas - 0
    IPSA70R600P7SAKMA1
    DISTI # 49AC8010
    Infineon Technologies AGMOSFET, N-CH, 700V, 8.5A, TO-251,Transistor Polarity:N Channel,Continuous Drain Current Id:8.5A,Drain Source Voltage Vds:700V,On Resistance Rds(on):0.49ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes480
    • 1000:$0.3480
    • 500:$0.3920
    • 100:$0.4350
    • 10:$0.6750
    • 1:$0.8080
    IPSA70R600P7SAKMA1
    DISTI # 726-IPSA70R600P7SAKM
    Infineon Technologies AGMOSFET CONSUMER
    RoHS: Compliant
    1987
    • 1:$0.8000
    • 10:$0.6680
    • 100:$0.4310
    • 1000:$0.3450
    IPSA70R600P7SAKMA1Infineon Technologies AG 
    RoHS: Not Compliant
    1500
    • 1000:$0.2600
    • 500:$0.2800
    • 100:$0.2900
    • 25:$0.3000
    • 1:$0.3200
    IPSA70R600P7SAKMA1
    DISTI # 2843153
    Infineon Technologies AGMOSFET, N-CH, 700V, 8.5A, TO-251
    RoHS: Compliant
    480
    • 6000:$0.4600
    • 3000:$0.4940
    • 1500:$0.5450
    • 100:$0.8620
    • 25:$1.0600
    • 5:$1.1300
    IPSA70R600P7SAKMA1
    DISTI # 2843153
    Infineon Technologies AGMOSFET, N-CH, 700V, 8.5A, TO-251480
    • 500:£0.2850
    • 250:£0.3070
    • 100:£0.3290
    • 10:£0.5590
    • 1:£0.6990
    画像 モデル 説明
    MJD31CT4G

    Mfr.#: MJD31CT4G

    OMO.#: OMO-MJD31CT4G

    Bipolar Transistors - BJT 3A 100V 15W NPN
    STGD4M65DF2

    Mfr.#: STGD4M65DF2

    OMO.#: OMO-STGD4M65DF2

    IGBT Transistors PTD HIGH VOLTAGE
    STGF4M65DF2

    Mfr.#: STGF4M65DF2

    OMO.#: OMO-STGF4M65DF2

    IGBT Transistors PTD HIGH VOLTAGE
    STGD4M65DF2

    Mfr.#: STGD4M65DF2

    OMO.#: OMO-STGD4M65DF2-STMICROELECTRONICS

    TRENCH GATE FIELD-STOP IGBT, M S
    STGF4M65DF2

    Mfr.#: STGF4M65DF2

    OMO.#: OMO-STGF4M65DF2-STMICROELECTRONICS

    TRENCH GATE FIELD-STOP IGBT, M S
    MJD31CT4G

    Mfr.#: MJD31CT4G

    OMO.#: OMO-MJD31CT4G-ON-SEMICONDUCTOR

    Bipolar Transistors - BJT 3A 100V 15W NPN
    可用性
    ストック:
    Available
    注文中:
    1984
    数量を入力してください:
    IPSA70R600P7SAKMA1の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
    参考価格(USD)
    単価
    小計金額
    1
    $0.80
    $0.80
    10
    $0.67
    $6.68
    100
    $0.43
    $43.10
    1000
    $0.34
    $345.00
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