FDA18N50

Mfr. #:: FDA18N50
メーカー:: ON Semiconductor
説明:: MOSFET N-CH 500V 19A TO-3P
ライフサイクル:: メーカー新製品
データシート:: FDA18N50 データシート
配達:: DHL FedEx Ups TNT EMS
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ECAD Model:

製品属性
属性値

メーカー: FSC

製品カテゴリ: FET-シングル

包装: チューブ

単位重量: 0.225789 oz

取り付けスタイル: スルーホール

パッケージ-ケース: TO-3P-3

テクノロジー: Si

チャネル数: 1 Channel

構成: 独身

トランジスタタイプ: 1 N-Channel

Pd-電力損失: 239 W

最高作動温度: + 150 C

最低作動温度: - 55 C

立ち下がり時間: 90 ns

立ち上がり時間: 165 ns

Vgs-Gate-Source-Voltage: 30 V

Id-連続-ドレイン-電流: 19 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 500 V

Rds-On-Drain-Source-Resistance: 265 mOhms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 95 ns

典型的なターンオン遅延時間: 55 ns

フォワード-相互コンダクタンス-最小: 25 S

チャネルモード: 強化

Tags: FDA18, FDA1, FDA

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDA18N50 説明

***Semiconductor: N-Channel Power MOSFET, UniFETTM, 500 V, 19 A, 265 mΩ, TO-3P

***Components: N-Channel MOSFET, 19 A, 500 V, 3-Pin TO-3P ON Semiconductor FDA18N50

***ure Electronics: N-Channel 500 V 265 mOhm Flange Mount UniFET Mosfet - TO-3PN

***ical: Trans MOSFET N-CH 500V 19A 3-Pin(3+Tab) TO-3P(N) Rail

***p One Stop Japan: Trans MOSFET N-CH 500V 19A 3-Pin(3+Tab) TO-3PN Rail

***ser: MOSFETs 500V N-CH MOSFET

***i-Key: MOSFET N-CH 500V 19A TO-3P

***ment14 APAC: Prices include import duty and tax.

***ark: MOSFET, N, TO-3PN; Transistor type:Enhancement; Voltage, Vds typ:500V; Current, Id cont:19A; Resistance, Rds on:0.265ohm; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:5V; Case style:TO-3PN; Current, Idm pulse:76A; Pins, RoHS Compliant: Yes

***nell: MOSFET, N, TO-3PN; Transistor Type:Enhancement; Transistor Polarity:N; Voltage, Vds Typ:500V; Current, Id Cont:19A; Resistance, Rds On:0.265ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-3PN; Termination Type:Through Hole; Current, Idm Pulse:76A; No. of Pins:3; Power Dissipation:239W; Voltage, Vds Max:500V; Voltage, Vgs th Max:5V

***rchild Semiconductor: UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

Market price

モデル	メーカー	説明	ストック	価格
FDA18N50 DISTI # 26637345	ON Semiconductor	500V, 19A, NCH, MOSFET	116550	5000:$1.0455 2500:$1.0880 1000:$1.1645 500:$1.4110 450:$1.6065
FDA18N50 DISTI # 27073658	ON Semiconductor	500V, 19A, NCH, MOSFET	450	5000:$1.1808 2500:$1.2288 1000:$1.3152 500:$1.5936 450:$1.8144
FDA18N50 DISTI # FDA18N50-ND	ON Semiconductor	MOSFET N-CH 500V 19A TO-3P RoHS: Compliant Min Qty: 1 Container: Tube	153In Stock	1350:$1.5041 900:$1.6389 450:$2.0746 10:$2.9040 1:$3.2200
FDA18N50 DISTI # C1S541901508425	ON Semiconductor	Trans MOSFET N-CH 500V 19A 3-Pin(3+Tab) TO-3PN Tube RoHS: Compliant	450	450:$1.8700
FDA18N50 DISTI # FDA18N50	ON Semiconductor	Trans MOSFET N-CH 500V 19A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube (Alt: FDA18N50) RoHS: Compliant Min Qty: 450 Container: Tube	Americas - 0	450:$1.0709 900:$1.0639 1800:$1.0509 2700:$1.0369 4500:$1.0119
FDA18N50 DISTI # 31Y1331	ON Semiconductor	MOSFET, N-CH, 500V, 19A, TO-3PN-3,Transistor Polarity:N Channel,Continuous Drain Current Id:19A,Drain Source Voltage Vds:500V,On Resistance Rds(on):0.22ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Product Range:- RoHS Compliant: Yes	100	1:$2.7800 10:$2.3600 100:$1.8900 500:$1.6600 1000:$1.3700 2500:$1.2800 5000:$1.2300
FDA18N50	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 19A I(D), 500V, 0.265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	568	1000:$1.3000 500:$1.3700 100:$1.4300 25:$1.4900 1:$1.6000
FDA18N50 DISTI # 512-FDA18N50	ON Semiconductor	MOSFET 500V N-CH MOSFET RoHS: Compliant	590	1:$2.7800 10:$2.3600 100:$1.8900 500:$1.6600 1000:$1.3700 2500:$1.2800 5000:$1.2300
FDA18N50 DISTI # 6714777	ON Semiconductor	MOSFET N-CHANNEL 500V 19A TO-3P(N), EA	100	1:£2.1900 10:£1.4500
FDA18N50 DISTI # 6714777P	ON Semiconductor	MOSFET N-CHANNEL 500V 19A TO-3P(N), TU	427	10:£1.4500
FDA18N50	ON Semiconductor	Power Field-Effect Transistor, 19A I(D), 500V, 0.265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	Europe - 450
FDA18N50 DISTI # 2453388	ON Semiconductor	MOSFET, N-CH, 500V, 19A, TO-3PN-3 RoHS: Compliant	100	1:$4.4000 10:$3.7400 100:$3.0000 500:$2.6300 1000:$2.1700 2500:$2.0300 5000:$1.9500 10000:$1.8700
FDA18N50. DISTI # 1495295	ON Semiconductor	RoHS: Compliant	0	1:$4.4000 10:$3.7400 100:$3.0000 500:$2.6300 1000:$2.1700 2500:$2.0300 5000:$1.9500 10000:$1.8700
FDA18N50 DISTI # 2453388	ON Semiconductor	MOSFET, N-CH, 500V, 19A, TO-3PN-3 RoHS: Compliant	116	1:£2.8700 10:£1.8100 100:£1.3800 250:£1.3000 500:£1.1900

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FDA18N50

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes