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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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| モデル | メーカー | 説明 | ストック | 価格 |
|---|---|---|---|---|
| RFD8P06ESM9A DISTI # RFD8P06ESM9A | Renesas Electronics Corporation | (Alt: RFD8P06ESM9A) RoHS: Compliant Min Qty: 1 | Europe - 0 | |
| RFD8P06LE | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 8A I(D), 60V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA RoHS: Not Compliant | 7200 | |
| RFD8P06LESM9A | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 8A I(D), 60V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Not Compliant | 38 | |
| RFD8P06E | Harris Semiconductor | Power Field-Effect Transistor, 8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA RoHS: Not Compliant | 2278 |
|
| RFD8P06ESM | Harris Semiconductor | Power Field-Effect Transistor, 8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Not Compliant | 414 |
|
| RFD8P06LE | Harris Semiconductor | Power Field-Effect Transistor, 8A I(D), 60V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA RoHS: Not Compliant | 1753 |
|
| FD8P06 | Harris Semiconductor | 525 | ||
| RFD8P06LESM9A | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 8A I(D), 60V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Not Compliant | Americas - 4627 |
| 画像 | モデル | 説明 |
|---|---|---|
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