CMPA801B025F

CMPA801B025F
Mfr. #:
CMPA801B025F
メーカー:
N/A
説明:
RF Amplifier GaN MMIC Power Amp 8.0-11.0GHz, 25 Watt
ライフサイクル:
メーカー新製品
データシート:
CMPA801B025F データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
CMPA801B025F 詳しくは
製品属性
属性値
メーカー:
カーボ
製品カテゴリ:
RFアンプ
JBoss:
Y
取り付けスタイル:
SMD / SMT
パッケージ/ケース:
DFN-8
タイプ:
フラットゲインLNA
動作周波数:
600 MHz to 6 GHz
P1dB-圧縮ポイント:
19 dBm
利得:
21.6 dB
動作供給電圧:
5 V
NF-雑音指数:
0.95 dB
テスト頻度:
5.5 GHz
OIP3-3次インターセプト:
35.5 dBm
動作供給電流:
56 mA
最低動作温度:
- 40 C
最高作動温度:
+ 105 C
シリーズ:
QPL9503
包装:
リール
ブランド:
カーボ
チャネル数:
1 Channel
開発キット:
QPL9503EVB-01
入力リターンロス:
10 dB
製品タイプ:
RFアンプ
ファクトリーパックの数量:
100
サブカテゴリ:
ワイヤレスおよびRF集積回路
Tags
CMPA8, CMPA, CMP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
IC RF AMP 8.5GHZ-11GHZ 440208
***hardson RFPD
RF & MW POWER AMPLIFIER
GaN HEMT based MMICs
Cree GaN (Gallium Nitride) HEMT (High Electron Mobility Transistor) based MMICs (monolithic microwave integrated circuits) enable extremely wide bandwidths to be achieved in small footprint packages. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors.Learn More
X-Band GaN HEMTs & MMICs
Wolfspeed/Cree X-Band GaN HEMTs & MMICs wide bandgap increases the breakdown field by five times and the power density by a factor of 10 to 20 compared with GaAs-based devices. Cree GaN components are smaller and have a lower capacitance for the same operating power. This means that amplifiers can operate over a wider bandwidth while exhibiting good input and output matching. X-band power amplifiers are moving away from inefficient GaAs pHEMTs and unreliable Traveling Wave Tubes due to the significant advantages of GaN HEMTs and MMICs.Learn More
モデル メーカー 説明 ストック 価格
CMPA801B025F
DISTI # CMPA801B025F-ND
WolfspeedIC RF AMP 8.5GHZ-11GHZ 440208
RoHS: Compliant
Min Qty: 1
Container: Tray
124In Stock
  • 1:$414.1000
CMPA801B025F-TB
DISTI # CMPA801B025F-TB-ND
WolfspeedIC RF AMP 8.5GHZ-11GHZ MODULE
RoHS: Compliant
Min Qty: 2
Container: Bulk
Temporarily Out of Stock
  • 2:$715.0000
CMPA801B025F
DISTI # 941-CMPA801B025F
Cree, Inc.RF Amplifier GaN MMIC Power Amp 8.0-11.0GHz, 25 Watt
RoHS: Compliant
12
  • 1:$414.1000
CMPA801B025F-TB
DISTI # 941-CMPA801B025F-TB
Cree, Inc.RF Amplifier Test Board without GaN MMIC
RoHS: Compliant
6
  • 1:$715.0000
CMPA801B025F
DISTI # CMPA801B025F
WolfspeedRF & MW POWER AMPLIFIER
RoHS: Compliant
0
  • 1:$414.1000
画像 モデル 説明
CMPA801B025F-TB

Mfr.#: CMPA801B025F-TB

OMO.#: OMO-CMPA801B025F-TB

RF Amplifier Test Board without GaN MMIC
AIML-0603-270K-T

Mfr.#: AIML-0603-270K-T

OMO.#: OMO-AIML-0603-270K-T

Fixed Inductors 27000nH, 1mA Tol.=+/-5%
AIML-0603-270K-T

Mfr.#: AIML-0603-270K-T

OMO.#: OMO-AIML-0603-270K-T-ABRACON

Fixed Inductors 27000nH, 1mA Tol.=+/-5%
CMPA801B025F-TB

Mfr.#: CMPA801B025F-TB

OMO.#: OMO-CMPA801B025F-TB-WOLFSPEED

IC RF AMP 8.5GHZ-11GHZ MODULE
可用性
ストック:
Available
注文中:
4000
数量を入力してください:
CMPA801B025Fの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格(USD)
単価
小計金額
75
$447.66
$33 574.50
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