IGW30N65L5XKSA1

IGW30N65L5XKSA1
Mfr. #:
IGW30N65L5XKSA1
メーカー:
Infineon Technologies
説明:
IGBT Transistors 650V IGBT Trenchstop 5
ライフサイクル:
メーカー新製品
データシート:
IGW30N65L5XKSA1 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
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HTML Datasheet:
IGW30N65L5XKSA1 Datasheet
ECAD Model:
詳しくは:
IGW30N65L5XKSA1 詳しくは
製品属性
属性値
メーカー:
インフィニオン
製品カテゴリ:
IGBTトランジスタ
JBoss:
Y
テクノロジー:
Si
パッケージ/ケース:
TO-247-3
取り付けスタイル:
スルーホール
構成:
独身
コレクター-エミッター電圧VCEOMax:
650 V
コレクター-エミッター飽和電圧:
1.05 V
最大ゲートエミッタ電圧:
20 V
25℃での連続コレクタ電流:
85 A
Pd-消費電力:
227 W
最低動作温度:
- 40 C
最高作動温度:
+ 175 C
シリーズ:
TRENCHSTOP 5 L5
包装:
チューブ
ブランド:
インフィニオンテクノロジーズ
ゲートエミッタリーク電流:
100 nA
製品タイプ:
IGBTトランジスタ
ファクトリーパックの数量:
240
サブカテゴリ:
IGBT
商標名:
トレンチストップ
パーツ番号エイリアス:
IGW30N65L5 SP001174472
単位重量:
0.213580 oz
Tags
IGW30N6, IGW30N, IGW3, IGW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 650V 85A 227000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
650V, 30A, TO-247-3 Low VCE(sat) IGBT in TRENCHSTOP 5 technology
***ineon SCT
Infineon’s new L5 low saturation voltage (V CE(sat)) TRENCHSTOP™ IGBT family has been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz, PG-TO247-3, RoHS
***ark
Igbt, Single, 650V, 85A, To-247; Dc Collector Current:85A; Collector Emitter Saturation Voltage Vce(On):1.05V; Power Dissipation Pd:227W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
***ineon
Infineons new L5 low saturation voltage (V CE(sat)) TRENCHSTOP IGBT family has been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz. Optimization of the carrier profile of the innovative 55m TRENCHSTOP 5 thin wafer technology allows to reduce conduction losses to the intrinsically low level 1.05V for 30A IGBT and 1.10V for 75A IGBT. | Summary of Features: Lowest saturation voltage V CE(sat) of only 1.05V; Low switching losses of 1.6mJ @ 25C for 30A IGBT; High thermal stability of electrical parameters - only 2% drift with T j increase from 25C to 175C; Enhanced efficiency for 20% lower switching losses in TO-247 4pin Kelvin-Emitter package | Benefits: Higher efficiency for 50Hz; Longer lifetime and higher reliability of IGBT; High design reliability due to stable thermal performance | Target Applications: UPS; Solar; Welding
TRENCHSTOP™ 5 IGBTs
Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.
TRENCHSTOP™ 5 L5 (Low Saturation 5) IGBTs
Infineon TRENCHSTOP™ 5 L5 (Low Saturation 5) IGBTs are at the other end of the switching frequency range, and are optimized to deliver outstanding performance in designs switching <10kHz. Infineon's L5 have been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz. The L5 offer a low VCE(sat) of 1.05V for 30A IGBTs, lowest switching losses in reactive power mode, at cos φ <1 and high thermal stability of electrical parameters. A new efficiency level is reachable with the 1.05V VCE(sat) TRENCHSTOP™ 5 L5 for low speed switching devices.
モデル メーカー 説明 ストック 価格
IGW30N65L5XKSA1
DISTI # IGW30N65L5XKSA1IN-ND
Infineon Technologies AGIGBT 650V 30A TRENCHSTOP TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube
On Order
  • 1200:$2.7254
  • 720:$3.1736
  • 240:$3.6735
  • 10:$4.4150
  • 1:$4.8800
IGW30N65L5XKSA1
DISTI # SP001174472
Infineon Technologies AGTrans IGBT Chip N-CH 650V 85A 3-Pin TO-247 Tube (Alt: SP001174472)
RoHS: Compliant
Min Qty: 1
Container: Tube
Europe - 240
  • 1:€2.2900
  • 10:€2.0900
  • 25:€1.9900
  • 50:€1.8900
  • 100:€1.8900
  • 500:€1.7900
  • 1000:€1.6900
IGW30N65L5XKSA1
DISTI # IGW30N65L5XKSA1
Infineon Technologies AGTrans IGBT Chip N-CH 650V 85A 3-Pin TO-247 Tube - Rail/Tube (Alt: IGW30N65L5XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube
Americas - 0
  • 240:$2.2900
  • 480:$2.1900
  • 960:$2.0900
  • 1440:$2.0900
  • 2400:$1.9900
IGW30N65L5XKSA1
DISTI # 12AC9665
Infineon Technologies AGIGBT, SINGLE, 650V, 85A, TO-247,DC Collector Current:85A,Collector Emitter Saturation Voltage Vce(on):1.05V,Power Dissipation Pd:227W,Collector Emitter Voltage V(br)ceo:650V,Transistor Case Style:TO-247,No. of Pins:3Pins,RoHS Compliant: Yes1192
  • 500:$3.1500
  • 250:$3.4700
  • 100:$3.6400
  • 50:$3.8100
  • 25:$3.9800
  • 10:$4.1500
  • 1:$4.8100
IGW30N65L5XKSA1
DISTI # 726-IGW30N65L5XKSA1
Infineon Technologies AGIGBT Transistors 650V IGBT Trenchstop 5
RoHS: Compliant
0
  • 1:$4.3400
  • 10:$3.6900
  • 100:$3.2000
  • 250:$3.0300
  • 500:$2.7200
IGW30N65L5XKSA1
DISTI # XSKDRABS0023696
Infineon Technologies AG 
RoHS: Compliant
720
  • 720:$2.7800
  • 240:$2.9800
IGW30N65L5XKSA1
DISTI # 2709992
Infineon Technologies AGIGBT, SINGLE, 650V, 85A, TO-247
RoHS: Compliant
1190
  • 100:£2.9400
  • 10:£3.3800
  • 1:£3.9800
IGW30N65L5XKSA1
DISTI # 2709992
Infineon Technologies AGIGBT, SINGLE, 650V, 85A, TO-247
RoHS: Compliant
1192
  • 1200:$3.8500
  • 720:$4.5700
  • 240:$5.3600
  • 10:$6.5400
  • 1:$7.2900
画像 モデル 説明
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Mfr.#: STGW30M65DF2

OMO.#: OMO-STGW30M65DF2

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Mfr.#: RGCL60TS60DGC11

OMO.#: OMO-RGCL60TS60DGC11

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IKW30N65ES5XKSA1

Mfr.#: IKW30N65ES5XKSA1

OMO.#: OMO-IKW30N65ES5XKSA1

IGBT Transistors TRENCHSTOP 5 S5 is the new IGBT family addressing applications switching between 10kHz and 40kHz to deliver high efficiency, faster time-to-market cycles, circuit design complexity re
FGH40T65UQDF-F155

Mfr.#: FGH40T65UQDF-F155

OMO.#: OMO-FGH40T65UQDF-F155

IGBT Transistors 650V FS4 Trench IGBT
IKW30N65NL5XKSA1

Mfr.#: IKW30N65NL5XKSA1

OMO.#: OMO-IKW30N65NL5XKSA1

IGBT Transistors 650V IGBT Trenchstop 5
FGH40T65SH-F155

Mfr.#: FGH40T65SH-F155

OMO.#: OMO-FGH40T65SH-F155

IGBT Transistors 650V FS Gen3 Trench IGBT
可用性
ストック:
Available
注文中:
1984
数量を入力してください:
IGW30N65L5XKSA1の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格(USD)
単価
小計金額
1
$4.34
$4.34
10
$3.69
$36.90
100
$3.20
$320.00
250
$3.03
$757.50
500
$2.72
$1 360.00
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