IXYN82N120C3H1

IXYN82N120C3H1
Mfr. #:
IXYN82N120C3H1
メーカー:
Littelfuse
説明:
IGBT Transistors XPT IGBT C3-Class 1200V/105A; Copack
ライフサイクル:
メーカー新製品
データシート:
IXYN82N120C3H1 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXYN82N120C3H1 DatasheetIXYN82N120C3H1 Datasheet (P4-P6)IXYN82N120C3H1 Datasheet (P7)
ECAD Model:
詳しくは:
IXYN82N120C3H1 詳しくは
製品属性
属性値
メーカー:
IXYS
製品カテゴリ:
IGBTトランジスタ
JBoss:
Y
テクノロジー:
Si
パッケージ/ケース:
SOT-227B-4
取り付けスタイル:
SMD / SMT
構成:
独身
コレクター-エミッター電圧VCEOMax:
1200 V
コレクター-エミッター飽和電圧:
2.75 V
最大ゲートエミッタ電圧:
30 V
25℃での連続コレクタ電流:
105 A
Pd-消費電力:
500 W
最低動作温度:
- 55 C
最高作動温度:
+ 150 C
シリーズ:
IXYN82N120
包装:
チューブ
連続コレクタ電流IcMax:
105 A
ブランド:
IXYS
ゲートエミッタリーク電流:
100 nA
製品タイプ:
IGBTトランジスタ
ファクトリーパックの数量:
10
サブカテゴリ:
IGBT
商標名:
XPT
単位重量:
1.058219 oz
Tags
IXYN8, IXYN, IXY
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Tube of 10, IXYS IXYN82N120C3H1 IGBT, 105 A 1200 V, 4-Pin SOT-227B
***ure Electronics
GenX3™ XPT™ IGBT 1200 V 105 A Chassis Mount High-Speed IGBT - SOT-227B
***ical
Trans IGBT Chip N-CH 1200V 105A 500000mW Automotive 4-Pin SOT-227B
***i-Key
IGBT MODULE 1200V 105A SOT227B
***ark
Igbt, N-Ch, 1.2Kv, 105A, Sot-227B; Transistor Polarity:n Channel; Dc Collector Current:105A; Collector Emitter Saturation Voltage Vce(On):3.2V; Power Dissipation Pd:500W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. IGBT, N-CH, 1.2KV, 105A, SOT-227B; Transistor Polarity:N Channel; DC Collector Current:105A; Collector Emitter Saturation Voltage Vce(on):3.2V; Power Dissipation Pd:500W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:SOT-227B; No. of Pins:4Pins; Operating Temperature Max:150°C; Product Range:XPT GenX3 Series; SVHC:No SVHC (12-Jan-2017)
***nell
IGBT, CA-N, 1,2KV, 105A, SOT-227B; Polarità Transistor:Canale N; Corrente di Collettore CC:105A; Tensione Saturaz Collettore-Emettitore Vce(on):3.2V; Dissipazione di Potenza Pd:500W; Tensione Collettore-Emettitore V(br)ceo:1.2kV; Modello Case Transistor:SOT-227B; No. di Pin:4Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:XPT GenX3 Series; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (12-Jan-2017)
1200V XPT™ High Speed IGBTs
IXYS 1200V XPT™ High Speed IGBTs are high speed, high-gain 1200V Insulated Gate Bipolar Transistor products. The 1200V XPT™ High Speed IGBTs feature high current ratings (105A - 160A, Tc = 25 degrees Centigrade) and are specifically optimized for reduced switching losses in high voltage applications that require hard-switching frequencies of up to 50 kHz. IXYS's 1200V XPT™ High Speed IGBTs have high-speed switching capabilities that allow customers to boost the power conversion efficiency of their designs and to use smaller, lighter and more cost-effective passive components. The resultant effect is a reduction in total system cost of ownership for these 1200V XPT™ High Speed IGBTs and a reduced PCB layout area.Learn More
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
モデル メーカー 説明 ストック 価格
IXYN82N120C3H1
DISTI # 23829664
IXYS CorporationTrans IGBT Chip N-CH 1.2KV 105A 4-Pin SOT-227B
RoHS: Compliant
220
  • 10:$29.5733
IXYN82N120C3H1
DISTI # IXYN82N120C3H1-ND
IXYS CorporationIGBT MODULE 1200V 105A SOT227B
RoHS: Compliant
Min Qty: 1
Container: Tube
136In Stock
  • 250:$27.5500
  • 100:$30.0200
  • 30:$32.3000
  • 10:$35.1500
  • 1:$38.0000
IXYN82N120C3H1
DISTI # 747-IXYN82N120C3H1
IXYS CorporationIGBT Transistors XPT IGBT C3-Class 1200V/105A,Copack
RoHS: Compliant
37
  • 1:$38.0000
  • 5:$36.1000
  • 10:$35.1500
  • 25:$32.3000
  • 50:$31.5200
  • 100:$30.0200
  • 200:$27.5500
IXYN82N120C3H1IXYS CorporationGenX3 XPT IGBT 1200 V 105 A Chassis Mount High-Speed IGBT - SOT-227B
RoHS: Compliant
370Tube
  • 1:$28.1600
  • 2:$26.7700
  • 5:$25.0200
  • 10:$23.7800
  • 25:$21.1200
IXYN82N120C3H1
DISTI # 8047622
IXYS CorporationIGBT 1200V 105A XPT GENX3 DIODE SOT227B, EA3
  • 1:£27.4900
  • 2:£27.3600
  • 5:£27.2200
  • 10:£24.4600
  • 30:£23.3600
IXYN82N120C3H1
DISTI # 2674802
IXYS CorporationIGBT, N-CH, 1.2KV, 105A, SOT-227B
RoHS: Compliant
0
  • 1:£28.7500
  • 5:£27.3100
  • 10:£24.4400
  • 50:£23.8400
  • 100:£20.8400
IXYN82N120C3H1
DISTI # XSFT00000023520
IXYS CorporationGENX3 XPT IGBT 1200 V 105 A CHASSIS MOUNTHIGH-SPEED IGBT - SOT-227B
RoHS: Compliant
280
  • 10:$35.6400
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可用性
ストック:
Available
注文中:
4000
数量を入力してください:
IXYN82N120C3H1の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格(USD)
単価
小計金額
1
$38.00
$38.00
5
$36.10
$180.50
10
$35.15
$351.50
25
$32.30
$807.50
50
$31.52
$1 576.00
100
$30.02
$3 002.00
200
$27.55
$5 510.00
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