IPB065N03LGATMA1

IPB065N03LGATMA1
Mfr. #:
IPB065N03LGATMA1
メーカー:
Infineon Technologies
説明:
MOSFET N-Ch 30V 50A D2PAK-2 OptiMOS 3
ライフサイクル:
メーカー新製品
データシート:
IPB065N03LGATMA1 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
製品属性
属性値
メーカー:
インフィニオン
製品カテゴリ:
MOSFET
JBoss:
Y
テクノロジー:
Si
取り付けスタイル:
SMD / SMT
パッケージ/ケース:
TO-263-3
チャネル数:
1 Channel
トランジスタの極性:
Nチャネル
Vds-ドレイン-ソース間降伏電圧:
30 V
Id-連続ドレイン電流:
50 A
Rds On-ドレイン-ソース抵抗:
5.4 mOhms
Vgs th-ゲート-ソースしきい値電圧:
1 V
Vgs-ゲート-ソース間電圧:
20 V
Qg-ゲートチャージ:
11 nC
最低動作温度:
- 55 C
最高作動温度:
+ 175 C
Pd-消費電力:
56 W
構成:
独身
チャネルモード:
強化
商標名:
OptiMOS
包装:
リール
高さ:
4.4 mm
長さ:
10 mm
シリーズ:
OptiMOS 3
トランジスタタイプ:
1 N-Channel
幅:
9.25 mm
ブランド:
インフィニオンテクノロジーズ
フォワード相互コンダクタンス-最小:
34 S
立ち下がり時間:
3.4 ns
製品タイプ:
MOSFET
立ち上がり時間:
4.2 ns
ファクトリーパックの数量:
1000
サブカテゴリ:
MOSFET
典型的なターンオフ遅延時間:
21 ns
典型的なターンオン遅延時間:
5.5 ns
パーツ番号エイリアス:
G IPB065N03L IPB65N3LGXT SP000254709
単位重量:
0.139332 oz
Tags
IPB065N03, IPB065N0, IPB065, IPB06, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, N-CH, 30V, 50A, TO-263-3; Transistor Polarity:N Channel; Continuous Drai
***ure Electronics
Single N-Channel 30 V 6.5 mOhm 23 nC OptiMOS™ Power Mosfet - D2PAK
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TO263-3, RoHS
***ment14 APAC
MOSFET, N-CH, 30V, 50A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0054ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:56W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
***ure Electronics
Single N-Channel 30 V 9.5 mOhm 9.6 nC HEXFET® Power Mosfet - DPAK
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
***roFlash
Power Field-Effect Transistor, 56A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance
***nell
MOSFET, N, LOGIC, D-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 56A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0095ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Diss
***ure Electronics
Single N-Channel 30 V 4.5 mOhm 13 nC OptiMOS™ Power Mosfet - TDSON-8
***ment14 APAC
MOSFET, N-CH, 30V, 63A, TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:63A; Source Voltage Vds:30V; On Resistance
***nell
MOSFET, N-CH, 30V, 63A, TDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 63A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0038ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 30W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
***emi
PowerTrench® MOSFET, N-Channel, 30V, 58A, 9mΩ
***ark
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,13A I(D),TO-252AA
***ure Electronics
N-Channel 30 V 58 A 9 mOhm PowerTrench Mosfet TO-252AA
*** Source Electronics
MOSFET N-CH 30V 58A DPAK / Trans MOSFET N-CH 30V 13A 3-Pin(2+Tab) DPAK T/R
***ment14 APAC
MOSFET, N-CH, 30V, 58A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:58A; Source Voltage Vds:30V; On Resistance
***roFlash
Power Field-Effect Transistor, 35A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
***nell
MOSFET, N-CH, 30V, 58A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 58A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.007ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 55W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***(Formerly Allied Electronics)
MOSFET; Power; N-Ch; VDSS 30V; RDS(ON) 7.5Milliohms; ID 65A; D-Pak (TO-252AA); PD 75W
***ure Electronics
Single N-Channel 30V 10 mOhm 10 nC HEXFET® Power Mosfet - TO-252AA
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
***ment14 APAC
N CHANNEL MOSFET, 30V, 65A, D-PAK; Trans; Transistor Polarity:N Channel; Continuous Drain Current Id:65A;
*** Stop Electro
Power Field-Effect Transistor, 65A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance; Logic Level
***ark
Mosfet Transistor; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:65A; On Resistance Rds(On):0.0075Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; No. Of Pins:3Pins Rohs Compliant: Yes
***emi
PowerTrench® MOSFET, N-Channel, 30V, 55A, 11.5mΩ
***r Electronics
Power Field-Effect Transistor, 35A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***nell
MOSFET, N D-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 12.6A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0094ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Power Dissipation P
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
***Yang
Transistor MOSFET Array Dual N-CH 30V 43A/75A 8-Pin PQFN T/R - Tape and Reel
***ark
PT7 N 30/20 and PT8 N 30/12 S in Power Stage56 - 8LD, PQFN, NON-JEDEC, 5.0X6.0MM, DUAL DAP
***emi
Asymmetric Dual N-Channel PowerTrench® Power Stage MOSFET 30V
*** Stop Electro
Small Signal Field-Effect Transistor, 13A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET™ (Q2) have been designed to provide optimal power efficiency.
***nell
MOSFET, N-CH, 30V, 18A, PQFN-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 18A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.01ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 2.5W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
モデル メーカー 説明 ストック 価格
IPB065N03LGATMA1
DISTI # V72:2272_06384772
Infineon Technologies AGTrans MOSFET N-CH 30V 50A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
159
  • 100:$0.7924
  • 25:$0.9188
  • 10:$1.0209
  • 1:$1.3160
IPB065N03LGATMA1
DISTI # V36:1790_06384772
Infineon Technologies AGTrans MOSFET N-CH 30V 50A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
0
  • 1000000:$0.4316
  • 500000:$0.4319
  • 100000:$0.4602
  • 10000:$0.5114
  • 1000:$0.5200
IPB065N03LGATMA1
DISTI # IPB065N03LGATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 30V 50A TO-263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
11822In Stock
  • 500:$0.7613
  • 100:$0.9216
  • 10:$1.1820
  • 1:$1.3200
IPB065N03LGATMA1
DISTI # IPB065N03LGATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 30V 50A TO-263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
11822In Stock
  • 500:$0.7613
  • 100:$0.9216
  • 10:$1.1820
  • 1:$1.3200
IPB065N03LGATMA1
DISTI # IPB065N03LGATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 30V 50A TO-263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
11000In Stock
  • 10000:$0.4980
  • 5000:$0.5174
  • 2000:$0.5446
  • 1000:$0.5835
IPB065N03LGATMA1
DISTI # 26195584
Infineon Technologies AGTrans MOSFET N-CH 30V 50A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
159
  • 14:$1.3160
IPB065N03LGATMA1
DISTI # SP000254709
Infineon Technologies AGTrans MOSFET N-CH 30V 50A 3-Pin TO-263 T/R (Alt: SP000254709)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel
Europe - 0
  • 10000:€0.4619
  • 6000:€0.4919
  • 4000:€0.5409
  • 2000:€0.6059
  • 1000:€0.7769
IPB065N03LGXT
DISTI # IPB065N03LGATMA1
Infineon Technologies AGTrans MOSFET N-CH 30V 50A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB065N03LGATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 10000:$0.4699
  • 6000:$0.4789
  • 4000:$0.4949
  • 2000:$0.5139
  • 1000:$0.5329
IPB065N03LGATMA1
DISTI # 47W3466
Infineon Technologies AGMOSFET, N CHANNEL, 30V, 50A, TO-263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0054ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V RoHS Compliant: Yes0
  • 500:$0.7110
  • 100:$0.8050
  • 10:$1.0400
  • 1:$1.2200
IPB065N03LGATMA1
DISTI # 726-IPB065N03LGATMA1
Infineon Technologies AGMOSFET N-Ch 30V 50A D2PAK-2 OptiMOS 3
RoHS: Compliant
2728
  • 1:$1.2100
  • 10:$1.0300
  • 100:$0.7970
  • 500:$0.7040
  • 1000:$0.5560
  • 2000:$0.4930
  • 10000:$0.4750
IPB065N03L G
DISTI # 726-IPB065N03LG
Infineon Technologies AGMOSFET N-Ch 30V 50A D2PAK-2 OptiMOS 3
RoHS: Compliant
1910
  • 1:$1.2100
  • 10:$1.0300
  • 100:$0.7970
  • 500:$0.7040
  • 1000:$0.5560
  • 2000:$0.4930
  • 10000:$0.4750
IPB065N03LGATMA1Infineon Technologies AGPower Field-Effect Transistor, 50A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Compliant
2000
  • 1000:$0.4200
  • 500:$0.4400
  • 100:$0.4600
  • 25:$0.4800
  • 1:$0.5200
IPB065N03LGATMA1
DISTI # 2212897
Infineon Technologies AGMOSFET, N-CH, 30V, 50A, TO-263-3
RoHS: Compliant
133
  • 2000:$0.7430
  • 1000:$0.8380
  • 500:$1.0600
  • 100:$1.2000
  • 10:$1.5500
  • 1:$1.8200
IPB065N03LGATMA1
DISTI # 2212897
Infineon Technologies AGMOSFET, N-CH, 30V, 50A, TO-263-3533
  • 500:£0.3250
  • 250:£0.3470
  • 100:£0.3690
  • 25:£0.4760
  • 5:£0.5300
画像 モデル 説明
INA139NA/3K

Mfr.#: INA139NA/3K

OMO.#: OMO-INA139NA-3K

Current & Power Monitors & Regulators Hi-Sd Msmnt Current Shunt Mntr Crnt Otp
DRV8313PWPR

Mfr.#: DRV8313PWPR

OMO.#: OMO-DRV8313PWPR

Motor / Motion / Ignition Controllers & Drivers 2.5A DC Motor Drvr 3 Phase Brushless
BQ7692006PWR

Mfr.#: BQ7692006PWR

OMO.#: OMO-BQ7692006PWR

Battery Management Li-Ion, Li-Phosphate Battery Moniter
STM32L073CZT6

Mfr.#: STM32L073CZT6

OMO.#: OMO-STM32L073CZT6

ARM Microcontrollers - MCU 16/32-BITS MICROS
UP3-MIBV-4-CM

Mfr.#: UP3-MIBV-4-CM

OMO.#: OMO-UP3-MIBV-4-CM

USB Connectors USB 3.0 micro B plug 10pin Vert cable mnt
NTCLE100E3103JB0

Mfr.#: NTCLE100E3103JB0

OMO.#: OMO-NTCLE100E3103JB0

NTC Thermistors 10Kohms 5% Radial
AA1206JR-070RL

Mfr.#: AA1206JR-070RL

OMO.#: OMO-AA1206JR-070RL

Thick Film Resistors - SMD ZERO Ohm ANTI SULFUR AEC-Q200
1455L1201BU

Mfr.#: 1455L1201BU

OMO.#: OMO-1455L1201BU

Enclosures, Boxes, & Cases Metal End Panel/Blue 4.72 x 1.20 x 4.06"
NTCLE100E3103JB0

Mfr.#: NTCLE100E3103JB0

OMO.#: OMO-NTCLE100E3103JB0-VISHAY

Thermistors - NTC 10Kohms 5% Radial
INA139NA/3K

Mfr.#: INA139NA/3K

OMO.#: OMO-INA139NA-3K-TEXAS-INSTRUMENTS

ブランドニューオリジナル
可用性
ストック:
Available
注文中:
1985
数量を入力してください:
IPB065N03LGATMA1の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格(USD)
単価
小計金額
1
$1.21
$1.21
10
$1.03
$10.30
100
$0.80
$79.70
500
$0.70
$352.00
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