BSC050NE2LS

Mfr. #:: BSC050NE2LS
メーカー:: Infineon Technologies
説明:: Trans MOSFET N-CH 25V 39A 8-Pin TDSON EP
ライフサイクル:: メーカー新製品
データシート:: BSC050NE2LS データシート
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詳しくは:: BSC050NE2LS 詳しくは

製品属性
属性値

メーカー: インフィニオンテクノロジーズ

製品カテゴリ: FET-シングル

シリーズ: OptiMOS

包装: Digi-ReelR代替パッケージ

パーツエイリアス: BSC050NE2LSATMA1 BSC050NE2LSXT SP000756340

取り付けスタイル: SMD / SMT

商標名: OptiMOS

パッケージ-ケース: 8-PowerTDFN

テクノロジー: Si

作動温度: -55°C ~ 150°C (TJ)

取付タイプ: 表面実装

チャネル数: 1 Channel

サプライヤー-デバイス-パッケージ: PG-TDSON-8

構成: シングルクワッドドレイントリプルソース

FETタイプ: MOSFET Nチャネル、金属酸化物

パワーマックス: 28W

トランジスタタイプ: 1 N-Channel

Drain-to-Source-Voltage-Vdss: 25V

入力-静電容量-Ciss-Vds: 760pF @ 12V

FET機能: 標準

Current-Continuous-Drain-Id-25°C: 39A (Ta), 58A (Tc)

Rds-On-Max-Id-Vgs: 5 mOhm @ 30A, 10V

Vgs-th-Max-Id: 2V @ 250μA

ゲートチャージ-Qg-Vgs: 10.4nC @ 10V

Pd-電力損失: 28 W

最高作動温度: + 150 C

最低作動温度: - 55 C

立ち下がり時間: 2 ns

立ち上がり時間: 2.2 ns

Vgs-Gate-Source-Voltage: 20 V

Id-連続-ドレイン-電流: 58 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 25 V

Rds-On-Drain-Source-Resistance: 5 mOhms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 11.4 nS

Qg-Gate-Charge: 10.4 nC

Tags: BSC050NE, BSC050N, BSC050, BSC05, BSC0, BSC

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSC050NE2LS 詳しくは

Designing Power Systems: Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More

20-60V OptiMOS Power MOSFETs: Infineon's 20-60V OptiMOS Power MOSFETs are innovative products that serve the market needs throughout the whole energy supply chain. OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). These devices consistently set the benchmark in key specifications for power system design, including leading on-state resistance and Figure of Merit characteristics which lead to reduced power losses and improved overall efficiency. These help customers that face the challenge of growing power demand, higher efficiency and lower cost.Learn More

Market price

モデル	メーカー	説明	ストック	価格
BSC050NE2LSATMA1 DISTI # V72:2272_06384786	Infineon Technologies AG	Trans MOSFET N-CH 25V 39A 8-Pin TDSON EP T/R RoHS: Compliant	81	3000:$0.2502 1000:$0.3404 500:$0.4110 250:$0.4155 100:$0.4201 25:$0.5900 10:$0.5975 1:$0.6909
BSC050NE2LSATMA1 DISTI # BSC050NE2LSATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 25V 39A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	69500In Stock	1000:$0.4164 500:$0.5274 100:$0.6801 10:$0.8610 1:$0.9700
BSC050NE2LSATMA1 DISTI # BSC050NE2LSATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 25V 39A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	69500In Stock	1000:$0.4164 500:$0.5274 100:$0.6801 10:$0.8610 1:$0.9700
BSC050NE2LSATMA1 DISTI # BSC050NE2LSATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 25V 39A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	65000In Stock	5000:$0.3638
BSC050NE2LS DISTI # 30581305	Infineon Technologies AG	Trans MOSFET N-CH 25V 39A 8-Pin TDSON EP RoHS: Compliant	12248	100:$0.5597 50:$0.6847 25:$1.0276
BSC050NE2LSATMA1 DISTI # 30535195	Infineon Technologies AG	Trans MOSFET N-CH 25V 39A 8-Pin TDSON EP T/R RoHS: Compliant	81	3000:$0.2502 1000:$0.3403 500:$0.4109 250:$0.4155 100:$0.4201 25:$0.5900 23:$0.5975
BSC050NE2LS DISTI # BSC050NE2LS	Infineon Technologies AG	Trans MOSFET N-CH 25V 39A 8-Pin TDSON T/R (Alt: BSC050NE2LS) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel	Asia - 5000	5000:$0.2979 10000:$0.2857 15000:$0.2818 25000:$0.2708 50000:$0.2673 125000:$0.2607 250000:$0.2543
BSC050NE2LSATMA1 DISTI # BSC050NE2LSATMA1	Infineon Technologies AG	Trans MOSFET N-CH 25V 39A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC050NE2LSATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	5000:$0.3239 10000:$0.3229 20000:$0.3219 30000:$0.3209 50000:$0.3209
BSC050NE2LSATMA1 DISTI # 47Y7994	Infineon Technologies AG	MOSFET Transistor, N Channel, 58 A, 25 V, 0.0042 ohm, 10 V, 2 V RoHS Compliant: Yes	0	1:$0.9200 10:$0.7600 25:$0.6700 50:$0.5800 100:$0.4900 250:$0.4570 500:$0.4250 1000:$0.3920
BSC050NE2LSATMA1. DISTI # 23AC2919	Infineon Technologies AG	Transistor Polarity:N Channel,Continuous Drain Current Id:58A,Drain Source Voltage Vds:25V,On Resistance Rds(on):0.0042ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:28W,No. of Pins:8Pins RoHS Compliant: Yes	0	1:$0.3210 10000:$0.3090 20000:$0.3030 30000:$0.2980 50000:$0.2970
BSC050NE2LS DISTI # 726-BSC050NE2LS	Infineon Technologies AG	MOSFET N-Ch 25V 58A TDSON-8 OptiMOS RoHS: Compliant	29083	1:$0.9200 10:$0.7600 100:$0.4900 1000:$0.3920
BSC050NE2LSATMA1 DISTI # 726-BSC050NE2LSATMA1	Infineon Technologies AG	MOSFET N-Ch 25V 58A TDSON-8 OptiMOS RoHS: Compliant	4711	1:$0.9200 10:$0.7600 100:$0.4900 1000:$0.3920
BSC050NE2LS	Infineon Technologies AG		3099
BSC050NE2LSATMA1 DISTI # 8275340P	Infineon Technologies AG	MOSFET N-CH 39A 25V OPTIMOS TDSON8EP, RL	2425	125:£0.1420
BSC050NE2LS DISTI # BSC050NE2LS	Infineon Technologies AG	Power Field-Effect Transistor, 23AI(D),60V,0.0028ohm, 1-Element,N-Channel,Silicon,Metal-oxide Semiconductor FET RoHS: Compliant	4792	1:$0.6700 500:$0.6400 1000:$0.6100
BSC050NE2LSATMA1 DISTI # 2443420	Infineon Technologies AG	MOSFET, N CH, 25V, 58A, TDSON-8 RoHS: Compliant	0	1:$1.4600 10:$1.2100 100:$0.7750 1000:$0.6210 5000:$0.5240
BSC050NE2LS	Infineon Technologies AG	25V,58A,N Channel Power MOSFET	15	1:$0.5200 100:$0.4400 500:$0.3900 1000:$0.3700
BSC050NE2LS DISTI # C1S322000437294	Infineon Technologies AG	Trans MOSFET N-CH 25V 39A 8-Pin TDSON EP T/R RoHS: Compliant	12248	100:$0.4390 50:$0.5370 10:$0.8060
BSC050NE2LSATMA1 DISTI # C1S322000232635	Infineon Technologies AG	Trans MOSFET N-CH 25V 39A 8-Pin TDSON EP T/R RoHS: Compliant	3381	250:$0.4155 100:$0.4201 25:$0.5900 10:$0.5975
BSC050NE2LSATMA1 DISTI # 2443420	Infineon Technologies AG	MOSFET, N CH, 25V, 58A, TDSON-8 RoHS: Compliant	0	5:£0.7430 25:£0.4280 100:£0.4200 250:£0.4110 500:£0.3950

画像	モデル	説明
	Mfr.#: BSC0500NSIATMA1 OMO.#: OMO-BSC0500NSIATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 30V 35A TDSON-8
	Mfr.#: BSC050NE2LSG OMO.#: OMO-BSC050NE2LSG-1190	ブランドニューオリジナル
	Mfr.#: BSC057N03LS OMO.#: OMO-BSC057N03LS-1190	ブランドニューオリジナル
	Mfr.#: BSC057N03MS G OMO.#: OMO-BSC057N03MS-G-1190	MOSFET N-Ch 30V 71A TDSON-8 OptiMOS 3M
	Mfr.#: BSC057N08NS3G OMO.#: OMO-BSC057N08NS3G-1190	Trans MOSFET N-CH 80V 16A 8-Pin TDSON T/R (Alt: BSC057N08NS3 G)
	Mfr.#: BSC059N03S G OMO.#: OMO-BSC059N03S-G-INFINEON-TECHNOLOGIES	MOSFET N-CH 30V 73A TDSON-8
	Mfr.#: BSC059N03S-G OMO.#: OMO-BSC059N03S-G-1190	ブランドニューオリジナル
	Mfr.#: BSC059N03SG OMO.#: OMO-BSC059N03SG-1190	ブランドニューオリジナル
	Mfr.#: BSC059N03SG , TDA8274AHN OMO.#: OMO-BSC059N03SG-TDA8274AHN-1190	ブランドニューオリジナル
	Mfr.#: BSC059N04LS OMO.#: OMO-BSC059N04LS-1190	ブランドニューオリジナル

BSC050NE2LS

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes