STGW60H65DRF

STGW60H65DRF
Mfr. #:
STGW60H65DRF
メーカー:
STMicroelectronics
説明:
IGBT Transistors 60A 650V Field Stop Trench Gate IBGT
ライフサイクル:
メーカー新製品
データシート:
STGW60H65DRF データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
STGW60H65DRF 詳しくは STGW60H65DRF Product Details
製品属性
属性値
メーカー:
STMicroelectronics
製品カテゴリ:
IGBTトランジスタ
JBoss:
Y
テクノロジー:
Si
パッケージ/ケース:
TO-247
取り付けスタイル:
SMD / SMT
コレクター-エミッター電圧VCEOMax:
650 V
コレクター-エミッター飽和電圧:
1.9 V
最大ゲートエミッタ電圧:
20 V
25℃での連続コレクタ電流:
120 A
Pd-消費電力:
360 W
シリーズ:
STGW60H65DRF
包装:
チューブ
ブランド:
STMicroelectronics
ゲートエミッタリーク電流:
250 nA
製品タイプ:
IGBTトランジスタ
ファクトリーパックの数量:
600
サブカテゴリ:
IGBT
単位重量:
0.229281 oz
Tags
STGW60H65D, STGW60H65, STGW60H, STGW6, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    A***o
    A***o
    RU

    Got it fast. Took for hours on gris. I will add a review after the tests in the assembled product.

    2019-06-08
    M***k
    M***k
    TR

    very goodthanks

    2019-05-18
***ical
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***nell
IGBT,N CH,FAST,W/DIO,600V,120A,TO247; Transistor Type:IGBT; DC Collector Current:120A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:600W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-247AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:600W
***ark
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***nell
IGBT, SINGLE, N-CH, 650V, 150A, TO-247-4; DC Collector Current: 150A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 455W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s new series of field stop 3rd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
***ical
Trans IGBT Chip N-CH 650V 120A 395000mW 3-Pin(3+Tab) TO-247 Tube
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***ark
Igbt, Single, 650V, 120A, To-247; Dc Collector Current:120A; Collector Emitter Saturation Voltage Vce(On):1.65V; Power Dissipation Pd:395W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:To-247; No. Of Pins:3Pins; Rohs Compliant: Yes |Infineon IGW75N65H5XKSA1
***ineon
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***nell
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***ineon SCT
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***ark
Igbt, 650V, 90A, 175Deg C, 395W; Continuous Collector Current:90A; Collector Emitter Saturation Voltage:1.65V; Power Dissipation:395W; Collector Emitter Voltage Max:650V; No. Of Pins:3Pins; Operating Temperature Max:175°C Rohs Compliant: Yes |Infineon IKW75N65EH5XKSA1
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
STGW60H65 Field Stop Trench Gate IGBTs
STMicroelectronics STGW60H65 Field Stop Trench Gate IGBTs are the first IGBTs feature an advanced proprietary trench gate and field stop structure. An optimized compromise between conduction and switching losses results in maximum efficiency. A very tight parameter distribution and VCE(sat) temperature coefficient slight positive makes it easier to parallel devices. The STGW60H65 comes in three different versions, one without an anti-parallel diode, one with a fast soft recovery, and one with an ultrafast soft recovery.Learn More
モデル メーカー 説明 ストック 価格
STGW60H65DRF
DISTI # V36:1790_06560782
STMicroelectronicsTrans IGBT Chip N-CH 650V 120A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
0
    STGW60H65DRF
    DISTI # 497-13166-ND
    STMicroelectronicsIGBT 650V 120A 420W TO247
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    319In Stock
    • 510:$6.1194
    • 120:$7.0274
    • 30:$8.0933
    • 10:$8.4880
    • 1:$9.4000
    STGW60H65DRF
    DISTI # STGW60H65DRF
    STMicroelectronicsTrans IGBT Chip N-CH 650V 120A 3-Pin(3+Tab) TO-247 Tube (Alt: STGW60H65DRF)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    Europe - 0
    • 1000:€2.2900
    • 500:€2.4900
    • 100:€2.5900
    • 50:€2.6900
    • 25:€2.7900
    • 10:€2.8900
    • 1:€3.1900
    STGW60H65DRF
    DISTI # STGW60H65DRF
    STMicroelectronicsTrans IGBT Chip N-CH 650V 120A 3-Pin(3+Tab) TO-247 Tube - Rail/Tube (Alt: STGW60H65DRF)
    RoHS: Compliant
    Min Qty: 600
    Container: Tube
    Americas - 0
    • 6000:$4.7900
    • 3600:$4.8900
    • 2400:$5.0900
    • 1200:$5.2900
    • 600:$5.5900
    STGW60H65DRF
    DISTI # 43W6511
    STMicroelectronicsPTD HIGH VOLTAGE0
    • 500:$4.8900
    • 250:$5.0400
    • 100:$6.0200
    • 50:$6.4700
    • 25:$6.9200
    • 10:$7.6000
    • 1:$8.4600
    STGW60H65DRF
    DISTI # 511-STGW60H65DRF
    STMicroelectronicsIGBT Transistors 60A 650V Field Stop Trench Gate IBGT
    RoHS: Compliant
    758
    • 1:$8.9400
    • 10:$8.0800
    • 25:$7.7000
    • 100:$6.6900
    • 250:$6.3900
    • 500:$5.8200
    • 1000:$5.0700
    STGW60H65DRFSTMicroelectronics 239
      STGW60H65DRF
      DISTI # IGBT1341
      STMicroelectronicsIGBT650V120A1.9VTO247-3Stock DE - 0Stock HK - 0Stock US - 0
      • 600:$3.0000
      STGW60H65DRF
      DISTI # STGW60H65DRF
      STMicroelectronics650V 120A 420W TO247
      RoHS: Not Compliant
      20
      • 5:€3.2000
      • 30:€2.8000
      • 120:€2.6000
      • 300:€2.5000
      STGW60H65DRFSTMicroelectronics60 A, 650 V field stop trench gate IGBT with Ultrafast diode193
      • 1:$2.7300
      • 100:$2.4900
      • 500:$2.1900
      • 1000:$2.1900
      画像 モデル 説明
      FOD3120SD

      Mfr.#: FOD3120SD

      OMO.#: OMO-FOD3120SD

      Logic Output Optocouplers Optocoupl Logic-Out Push-Pul DC-In 1-Ch
      FOD3120SD

      Mfr.#: FOD3120SD

      OMO.#: OMO-FOD3120SD-ON-SEMICONDUCTOR

      Logic Output Optocouplers Optocoupl Logic-Out Push-Pul DC-In 1-Ch
      可用性
      ストック:
      758
      注文中:
      2741
      数量を入力してください:
      STGW60H65DRFの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
      参考価格(USD)
      単価
      小計金額
      1
      $8.94
      $8.94
      10
      $8.08
      $80.80
      25
      $7.70
      $192.50
      100
      $6.69
      $669.00
      250
      $6.39
      $1 597.50
      500
      $5.82
      $2 910.00
      1000
      $5.07
      $5 070.00
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