FDP8874

FDP8874
Mfr. #:
FDP8874
メーカー:
ON Semiconductor / Fairchild
説明:
MOSFET 30V 114A 5.3 OHM N-CH
ライフサイクル:
メーカー新製品
データシート:
FDP8874 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
FDP8874 詳しくは
製品属性
属性値
メーカー:
オン・セミコンダクター
製品カテゴリ:
MOSFET
JBoss:
Y
テクノロジー:
Si
取り付けスタイル:
スルーホール
パッケージ/ケース:
TO-220-3
チャネル数:
1 Channel
トランジスタの極性:
Nチャネル
Vds-ドレイン-ソース間降伏電圧:
30 V
Id-連続ドレイン電流:
114 A
Rds On-ドレイン-ソース抵抗:
3.6 mOhms
Vgs-ゲート-ソース間電圧:
20 V
最低動作温度:
- 55 C
最高作動温度:
+ 175 C
Pd-消費電力:
110 W
構成:
独身
チャネルモード:
強化
商標名:
PowerTrench
包装:
チューブ
高さ:
16.3 mm
長さ:
10.67 mm
シリーズ:
FDP8874
トランジスタタイプ:
1 N-Channel
タイプ:
MOSFET
幅:
4.7 mm
ブランド:
オン・セミコンダクター/フェアチャイルド
立ち下がり時間:
31 ns
製品タイプ:
MOSFET
立ち上がり時間:
128 ns
ファクトリーパックの数量:
800
サブカテゴリ:
MOSFET
典型的なターンオフ遅延時間:
44 ns
典型的なターンオン遅延時間:
10 ns
パーツ番号エイリアス:
FDP8874_NL
単位重量:
0.063493 oz
Tags
FDP8874, FDP887, FDP88, FDP8, FDP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
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***rchild Semiconductor
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***ure Electronics
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***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***p One Stop Global
Trans MOSFET N-CH 30V 105A 3-Pin(3+Tab) TO-220AB Tube
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance; Logic Level
***ark
N Channel Mosfet, 30V, 105A, To-220Ab; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:105A; On Resistance Rds(On):0.006Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
***ment14 APAC
MOSFET, N, 30V, 105A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:105A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.25V; Power Dissipation Pd:110W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:105A; Junction to Case Thermal Resistance A:1.32°C/W; On State resistance @ Vgs = 10V:6ohm; Package / Case:TO-220AB; Power Dissipation Pd:110W; Power Dissipation Pd:110W; Pulse Current Idm:420A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.25V
***ark
RAIL/30V,92A,5.9m ohm ,NCH,TO220,POWER TRENCH MOSFET
***Yang
Trans MOSFET N-CH 30V 16A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube
***emi
N-Channel PowerTrench® MOSFET 30V, 92A, 5.9mΩ
***ure Electronics
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***r Electronics
Power Field-Effect Transistor, 80A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
***ure Electronics
Single N-Channel 30 V 6.3 mOhm 17 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***Yang
Trans MOSFET N-CH 30V 87A 3-Pin(3+Tab) TO-220AB - Rail/Tube
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 42A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance
***ark
MOSFET, N, 30V, TO-220AB; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:87A; Resistance, Rds On:0.0063ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.25V; Case Style:TO-220AB; ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, 30V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:87A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.25V; Power Dissipation Pd:79W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:3709; Current Id Max:87A; N-channel Gate Charge:17nC; Package / Case:TO-220AB; Power Dissipation Pd:79W; Power Dissipation Pd:79mW; Pulse Current Idm:350A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.25V; Voltage Vgs th Min:1.35V
***p One Stop Global
Trans MOSFET N-CH 30V 80A 3-Pin(3+Tab) TO-220AB Tube
***r Electronics
Power Field-Effect Transistor, 80A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, 3-TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:75W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:80A; Package / Case:TO-220; Power Dissipation Pd:75W; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:1.9V; Voltage Vgs Rds on Measurement:10V
***rchild Semiconductor
This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
***(Formerly Allied Electronics)
IRL3803VPBF N-channel MOSFET Transistor, 140 A, 30 V, 3-Pin TO-220
***ure Electronics
Single N-Channel 30 V 5.5 mOhm 76 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fully Avalanche Rated; Logic Level
***ow.cn
Trans MOSFET N-CH Si 30V 140A 3-Pin(3+Tab) TO-220AB Tube
***ment14 APAC
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***emi
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***r Electronics
Power Field-Effect Transistor, 15A I(D), 60V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:28V; Continuous Drain Current, Id:85A; On Resistance, Rds(on):6.8mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220 ;RoHS Compliant: Yes
Fairchild PowerTrench MOSFETs
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
モデル メーカー 説明 ストック 価格
FDP8874
DISTI # V99:2348_06300762
ON Semiconductor30V N-CHANNEL POWERTRENCH&#174600
  • 10000:$0.5571
  • 2500:$0.5880
  • 1000:$0.6371
  • 500:$0.8381
  • 100:$0.9287
  • 10:$1.2170
  • 1:$1.5873
FDP8874
DISTI # V36:1790_06300762
ON Semiconductor30V N-CHANNEL POWERTRENCH&#1740
    FDP8874
    DISTI # FDP8874FS-ND
    ON SemiconductorMOSFET N-CH 30V 114A TO-220AB
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    818In Stock
    • 5600:$0.6184
    • 3200:$0.6509
    • 800:$0.8834
    • 100:$1.0694
    • 25:$1.3020
    • 10:$1.3720
    • 1:$1.5300
    FDP8874
    DISTI # 30345292
    ON Semiconductor30V N-CHANNEL POWERTRENCH&#174600
    • 12:$1.5873
    FDP8874
    DISTI # FDP8874
    ON SemiconductorTrans MOSFET N-CH 30V 16A 3-Pin(3+Tab) TO-220AB Tube - Bulk (Alt: FDP8874)
    RoHS: Compliant
    Min Qty: 391
    Container: Bulk
    Americas - 0
    • 3910:$0.7899
    • 1955:$0.8099
    • 1173:$0.8199
    • 782:$0.8309
    • 391:$0.8359
    FDP8874
    DISTI # FDP8874
    ON SemiconductorTrans MOSFET N-CH 30V 16A 3-Pin(3+Tab) TO-220AB Tube (Alt: FDP8874)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    Europe - 0
    • 1000:€0.4779
    • 500:€0.5149
    • 100:€0.5579
    • 50:€0.6079
    • 25:€0.6689
    • 10:€0.7439
    • 1:€0.8369
    FDP8874
    DISTI # FDP8874
    ON SemiconductorTrans MOSFET N-CH 30V 16A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube (Alt: FDP8874)
    RoHS: Compliant
    Min Qty: 800
    Container: Tube
    Americas - 0
    • 8000:$0.8759
    • 4000:$0.8979
    • 2400:$0.9099
    • 1600:$0.9219
    • 800:$0.9279
    FDP8874
    DISTI # 60J0602
    ON SemiconductorTRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,16A I(D),TO-220AB ROHS COMPLIANT: YES0
    • 50000:$0.5940
    • 24000:$0.6080
    • 10000:$0.6250
    • 2000:$0.6610
    • 1000:$0.6650
    • 100:$0.9750
    • 10:$1.2500
    • 1:$1.6000
    FDP8874
    DISTI # 512-FDP8874
    ON SemiconductorMOSFET 30V 114A 5.3 OHM N-CH
    RoHS: Compliant
    2217
    • 1:$1.4600
    • 10:$1.2400
    • 100:$0.9530
    • 500:$0.8420
    • 1000:$0.6650
    • 2500:$0.5890
    • 10000:$0.5670
    FDP8874Fairchild Semiconductor CorporationPower Field-Effect Transistor, 80A I(D), 30V, 0.0066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    RoHS: Compliant
    2591
    • 1000:$0.8400
    • 500:$0.8900
    • 100:$0.9200
    • 25:$0.9600
    • 1:$1.0400
    FDP8874
    DISTI # 6714878P
    ON SemiconductorMOSFET N-CHANNEL 30V 16A TO220AB, TU950
    • 500:£0.6320
    • 250:£0.7160
    • 50:£0.8220
    • 25:£0.9260
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    Current Sense Resistors - SMD 0805 1.8mOhms 1% Rev Term AEC-Q200
    C503B-RAN-CZ0C0AA1

    Mfr.#: C503B-RAN-CZ0C0AA1

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    Standard LEDs - Through Hole Red Round
    WP154A4SEJ3VBDZGW/CA

    Mfr.#: WP154A4SEJ3VBDZGW/CA

    OMO.#: OMO-WP154A4SEJ3VBDZGW-CA

    Standard LEDs - Through Hole 5MM RGB LED
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    Mfr.#: 2465

    OMO.#: OMO-2465

    Interface Modules Rechargeable 5V Lipo USB Boost
    PMR10EZPJV2L0

    Mfr.#: PMR10EZPJV2L0

    OMO.#: OMO-PMR10EZPJV2L0-ROHM-SEMI

    RES 0.002 OHM 5% 1/2W 0805
    26-60-4020

    Mfr.#: 26-60-4020

    OMO.#: OMO-26-60-4020-410

    Headers & Wire Housings VERT PCB HDR 2P TIN FRICTION LOCK
    2465

    Mfr.#: 2465

    OMO.#: OMO-2465-KEYSTONE-ELECTRONICS

    Battery Holders, Clips & Contacts Cylindrical Battery Contacts, Clips, Holders & Springs AA Battery. HOLDER 6" LEADS
    可用性
    ストック:
    Available
    注文中:
    1985
    数量を入力してください:
    FDP8874の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
    参考価格(USD)
    単価
    小計金額
    1
    $1.46
    $1.46
    10
    $1.24
    $12.40
    100
    $0.95
    $95.30
    500
    $0.84
    $421.00
    1000
    $0.66
    $665.00
    2500
    $0.59
    $1 472.50
    10000
    $0.57
    $5 670.00
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