IPW60R170CFD7XKSA1

IPW60R170CFD7XKSA1
Mfr. #:
IPW60R170CFD7XKSA1
メーカー:
Infineon Technologies
説明:
MOSFET HIGH POWER_NEW
ライフサイクル:
メーカー新製品
データシート:
IPW60R170CFD7XKSA1 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
IPW60R170CFD7XKSA1 詳しくは
製品属性
属性値
メーカー:
インフィニオン
製品カテゴリ:
MOSFET
JBoss:
Y
テクノロジー:
Si
取り付けスタイル:
スルーホール
パッケージ/ケース:
TO-247-3
チャネル数:
1 Channel
トランジスタの極性:
Nチャネル
Vds-ドレイン-ソース間降伏電圧:
600 V
Id-連続ドレイン電流:
14 A
Rds On-ドレイン-ソース抵抗:
144 mOhms
Vgs th-ゲート-ソースしきい値電圧:
3.5 V
Vgs-ゲート-ソース間電圧:
20 V
Qg-ゲートチャージ:
28 nC
最低動作温度:
- 55 C
最高作動温度:
+ 150 C
Pd-消費電力:
75 W
構成:
独身
チャネルモード:
強化
商標名:
CoolMOS
包装:
チューブ
シリーズ:
CoolMOS CFD7
トランジスタタイプ:
1 N-Channel
ブランド:
インフィニオンテクノロジーズ
立ち下がり時間:
9 ns
製品タイプ:
MOSFET
立ち上がり時間:
15 ns
ファクトリーパックの数量:
240
サブカテゴリ:
MOSFET
典型的なターンオフ遅延時間:
68 ns
典型的なターンオン遅延時間:
31 ns
パーツ番号エイリアス:
IPW60R170CFD7 SP001617988
Tags
IPW60R1, IPW60, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
CoolMOS CFD7 Power Transistor High Power 170mΩ 75W 600V PG-TO 247-3
***ark
Mosfet, N-Ch, 600V, 14A, To-247; Transistor Polarity:n Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.144Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipationrohs Compliant: Yes
***ineon
The 600V CoolMOS CFD7 is s latest high voltage superjunction MOSFET technology with integrated fast body diode, completes the CoolMOS 7 series. It is the ideal choice for resonant topologies in high power SMPS applications such as server, telecom and EV charging stations. | Summary of Features: Ultra-fast body diode; Best-in-class reverse recovery charge (Q rr); Improved reverse diode dv/dt and dif/dt ruggedness; Lowest FOM R DS(on) x Q g and E oss; Best-in-class R DS(on)/package combinations | Benefits: Best-in-class hard commutation ruggedness; Highest reliability for resonant topologies; Highest efficiency in target applications; Enabling increased power density solutions | Target Applications: Server; Telecom; EV-charging; SMPS; PC power
CFD7 CoolMOS™ MOSFETs
Infineon Technologies CFD7 CoolMOS™ MOSFETs are ideal for resonant high power topologies and feature high voltage superjunction MOSFET technology. The MOSFETs have an integrated fast body diode and completes the CoolMOS 7 series. Typical high power SMPS applications include server, telecom and EV charging stations.
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
モデル メーカー 説明 ストック 価格
IPW60R170CFD7XKSA1
DISTI # V36:1790_18786390
Infineon Technologies AGTrans MOSFET N-CH 600V 14A 3-Pin(3+Tab) TO-247 Tube0
  • 240000:$1.4100
  • 120000:$1.4130
  • 24000:$1.8430
  • 2400:$2.6680
  • 240:$2.8100
IPW60R170CFD7XKSA1
DISTI # IPW60R170CFD7XKSA1-ND
Infineon Technologies AGMOSFET N-CH 600V TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube
497In Stock
  • 5040:$1.6264
  • 2640:$1.6899
  • 720:$2.1092
  • 240:$2.4777
  • 25:$2.8588
  • 10:$3.0240
  • 1:$3.3700
IPW60R170CFD7XKSA1
DISTI # IPW60R170CFD7XKSA1
Infineon Technologies AGCoolMOS CFD7 Power Transistor High Power 170mΩ 75W 600V PG-TO 247-3 - Rail/Tube (Alt: IPW60R170CFD7XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube
Americas - 0
  • 1440:$1.4900
  • 2400:$1.4900
  • 480:$1.5900
  • 960:$1.5900
  • 240:$1.6900
IPW60R170CFD7XKSA1
DISTI # SP001617988
Infineon Technologies AGCoolMOS CFD7 Power Transistor High Power 170mΩ 75W 600V PG-TO 247-3 (Alt: SP001617988)
RoHS: Compliant
Min Qty: 30
Europe - 0
  • 300:€1.3900
  • 180:€1.4900
  • 120:€1.5900
  • 60:€1.6900
  • 30:€2.0900
IPW60R170CFD7XKSA1
DISTI # 43AC9331
Infineon Technologies AGMOSFET, N-CH, 600V, 14A, TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:14A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.144ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power DissipationRoHS Compliant: Yes167
  • 500:$2.0200
  • 250:$2.2500
  • 100:$2.3800
  • 50:$2.5000
  • 25:$2.6300
  • 10:$2.7500
  • 1:$3.2300
IPW60R170CFD7XKSA1
DISTI # 726-IPW60R170CFD7XKS
Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant
359
  • 1:$3.2000
  • 10:$2.7200
  • 100:$2.3600
  • 250:$2.2300
  • 500:$2.0000
IPW60R170CFD7XKSA1
DISTI # 2807981
Infineon Technologies AGMOSFET, N-CH, 600V, 14A, TO-247185
  • 500:£1.4600
  • 250:£1.6300
  • 100:£1.7300
  • 10:£2.0000
  • 1:£2.6400
IPW60R170CFD7XKSA1
DISTI # 2807981
Infineon Technologies AGMOSFET, N-CH, 600V, 14A, TO-247
RoHS: Compliant
167
  • 1000:$2.4400
  • 500:$2.4800
  • 250:$2.6100
  • 100:$2.7600
  • 10:$3.1200
  • 1:$3.3400
画像 モデル 説明
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MOSFET MOSFT 200V 30A 75mOhm 82nCAC
MBRAF3200T3G

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Schottky Diodes & Rectifiers 3 A 200 V SCHOTTKY RECTIFIER
UCC28950PW

Mfr.#: UCC28950PW

OMO.#: OMO-UCC28950PW

Switching Controllers Green Phase-Shifted Full-Bridge Cntrlr
83006 010100

Mfr.#: 83006 010100

OMO.#: OMO-83006-010100

Hook-up Wire 22AWG 1C TFE 100ft SPOOL BLACK
IRFP250MPBF

Mfr.#: IRFP250MPBF

OMO.#: OMO-IRFP250MPBF-INFINEON-TECHNOLOGIES

MOSFET N-CH 200V 30A TO-247AC
EMK107B7104KAHT

Mfr.#: EMK107B7104KAHT

OMO.#: OMO-EMK107B7104KAHT-TAIYO-YUDEN

CAP CER 0.1UF 16V X7R 0603
B82111B0000C019

Mfr.#: B82111B0000C019

OMO.#: OMO-B82111B0000C019-EPCOS

INDUCTOR, 13UH, 3A, AXIAL
MBRAF3200T3G

Mfr.#: MBRAF3200T3G

OMO.#: OMO-MBRAF3200T3G-ON-SEMICONDUCTOR

Schottky Diodes & Rectifiers 3 A 200 V SCHOTTKY RECTIFIER
可用性
ストック:
349
注文中:
2332
数量を入力してください:
IPW60R170CFD7XKSA1の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格(USD)
単価
小計金額
1
$3.20
$3.20
10
$2.72
$27.20
100
$2.36
$236.00
250
$2.23
$557.50
500
$2.00
$1 000.00
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