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FGA90N33ATDTU

FGA90N33ATDTU
Mfr. #:
FGA90N33ATDTU
メーカー:
ON Semiconductor / Fairchild
説明:
IGBT Transistors 330V 90A PDP Trench
ライフサイクル:
メーカー新製品
データシート:
FGA90N33ATDTU データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
製品属性
属性値
メーカー：
オン・セミコンダクター
製品カテゴリ：
IGBTトランジスタ
JBoss：
Y
テクノロジー：
Si
パッケージ/ケース：
TO-3PN-3
取り付けスタイル：
スルーホール
構成：
独身
コレクター-エミッター電圧VCEOMax：
330 V
最大ゲートエミッタ電圧：
30 V
最低動作温度：
- 55 C
最高作動温度：
+ 150 C
シリーズ：
FGA90N33ATD
包装：
チューブ
連続コレクタ電流IcMax：
90 A
高さ：
18.9 mm
長さ：
15.8 mm
幅：
5 mm
ブランド：
オン・セミコンダクター/フェアチャイルド
製品タイプ：
IGBTトランジスタ
ファクトリーパックの数量：
450
サブカテゴリ：
IGBT
単位重量：
0.225789 oz
Tags
FGA90N33AT, FGA90N33A, FGA90N33, FGA90, FGA9, FGA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 330V 90A 3-Pin(3+Tab) TO-3P(N) Tube
*** Stop Electro
Insulated Gate Bipolar Transistor, 90A I(C), 330V V(BR)CES, N-Channel
***th Star Micro
Using Novel Trench IGBT Technology, Fairchild's new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.
***ical
Trans IGBT Chip N-CH 300V 90A 3-Pin(3+Tab) TO-3P Rail
***Yang
IGBT 300V 90A 219W Through Hole TO-3P - Bulk
***nell
IGBT, TO-3P; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:300V; Current Ic Continuous a Max:90A; Voltage, Vce Sat Max:1.4V; Power Dissipation:219W; Case Style:TO-3P; Termination Type:Through Hole; Collector-to-Emitter Breakdown Voltage:300V; Current Ic @ Vce Sat:20A; Current, Icm Pulsed:220A; No. of Pins:3; Pin Configuration:With flywheel diode; Power, Pd:219W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Thermal Resistance, Junction to Case A:0.57°C/W; Time, Fall:110ns; Time, Rise:200ns; Transistors, No. of:1
***p One Stop
Trans IGBT Chip N-CH 330V 70A 160000mW 3-Pin(3+Tab) TO-220AB Tube
***ernational Rectifier
330V UltraFast Copack Plasma Display Panel Trench IGBT in a TO-220AB package
***ineon SCT
This 330V IGBT is specifically designed for applications in Plasma Display Panels in a TO-220AB package, TO220COPAK-3, RoHS
***el Electronic
Fixed Inductors 75nH NO ±2% 0402 (1005 Metric) Tape & Reel (TR) 100MHz 1.224 Ω Max LQW15 Surface Mount Fixed Inductors 0402 75nH 135mA +/-2%
***i-Key
IGBT 330V 85A 150W TO3P
***ource
High Voltage IGBT with Diode
***S
new, original packaged
***enic
TO-3P IGBTs ROHS
***ical
Trans IGBT Chip N-CH 330V 3-Pin(3+Tab) TO-220F Tube
***r Electronics
Insulated Gate Bipolar Transistor, 330V V(BR)CES, N-Channel, TO-220AB
***ark
RAIL/N-ch / 50A 330V 4th Gen PDP trench IGBT
***i-Key
IGBT, 330V, N-CHANNEL, TO-220AB
***rchild Semiconductor
Using novel trench IGBT technology, Fairchild's new series of trench IGBTs offer the optimum performance for consumer appliances, PDP TV and lighting applications where low conduction and switching losses are essential.
***et
Trans IGBT Chip N-CH 330V 0.2A 3-Pin(3+Tab) TO-220F Tube
***r Electronics
Insulated Gate Bipolar Transistor, 50A I(C), 330V V(BR)CES, N-Channel, TO-220AB
***rchild Semiconductor
Using novel trench IGBT technology, Fairchild’s new series of trench IGBTs offer the optimum performance for consumer appliances, PDP TV and lighting applications where low conduction and switching losses are essential.
***ernational Rectifier
330V Plasma Display Panel Trench IGBT in a TO-220AB Full-Pak package
***p One Stop
Trans IGBT Chip N-CH 330V 24A 3-Pin(3+Tab) TO-220AB
***ark
Transistor; Transistor Type:IGBT; Transistor Polarity:N Channel; Collector Emitter Voltage, Vces:330V; Continuous Collector Current, Ic:24A; Collector Emitter Saturation Voltage, Vce(sat):1.45V; Power Dissipation, Pd:39W ;RoHS Compliant: Yes
モデル メーカー 説明 ストック 価格
FGA90N33ATDTU
DISTI # V79:2366_17795264		ON SemiconductorN-CH/ 90A 330V PDP IGBT4
  • 100:$1.2466
  • 25:$1.3291
  • 10:$1.4671
  • 1:$1.6479
FGA90N33ATDTU
DISTI # FGA90N33ATDTU-ND		ON SemiconductorIGBT 330V 90A 223W TO3P
RoHS: Compliant
Min Qty: 450
Container: Tube		Limited Supply - Call
    FGA90N33ATDTU
    DISTI # C1S541901396617    		ON SemiconductorIGBT Chip
    RoHS: Not Compliant    		4
    • 10:$1.5409
    FGA90N33ATDTU
    DISTI # FGA90N33ATDTU    		ON SemiconductorTrans IGBT Chip N-CH 330V 90A 3-Pin(3+Tab) TO-3P(N) Tube - Rail/Tube (Alt: FGA90N33ATDTU)
    RoHS: Compliant
    Min Qty: 450
    Container: Tube    		Americas - 0
    • 450:$1.7900
    • 900:$1.7900
    • 1800:$1.6900
    • 2700:$1.6900
    • 4500:$1.6900
    FGA90N33ATDTU
    DISTI # FGA90N33ATDTU    		ON SemiconductorTrans IGBT Chip N-CH 330V 90A 3-Pin(3+Tab) TO-3P(N) Tube (Alt: FGA90N33ATDTU)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		Europe - 0
    • 1:€1.8900
    • 10:€1.7900
    • 25:€1.7900
    • 50:€1.6900
    • 100:€1.6900
    • 500:€1.5900
    • 1000:€1.5900
    FGA90N33ATDTUFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 90A I(C), 330V V(BR)CES, N-Channel
    RoHS: Compliant    		12456
    • 1000:$3.2500
    • 500:$3.4200
    • 100:$3.5600
    • 25:$3.7100
    • 1:$4.0000
    FGA90N33ATDTU
    DISTI # 512-FGA90N33ATDTU    		ON SemiconductorIGBT Transistors 330V 90A PDP Trench
    RoHS: Compliant    		0
      FGA90N33ATDTUON SemiconductorINSTOCK7919
        FGA90N33ATDTUON Semiconductor 7200
        • 1:$4.7800
        • 100:$3.0600
        • 500:$2.5200
        • 1000:$2.3200
        画像 モデル 説明
        FGA90N33ATTU

        Mfr.#: FGA90N33ATTU

        OMO.#: OMO-FGA90N33ATTU

        		 IGBT Transistors 330V 90A PDP Trench
        FGA90N33ATDTU

        Mfr.#: FGA90N33ATDTU

        OMO.#: OMO-FGA90N33ATDTU-ON-SEMICONDUCTOR

        		 IGBT Transistors 330V 90A PDP Trench
        FGA90N30

        Mfr.#: FGA90N30

        OMO.#: OMO-FGA90N30-1190

        		 ブランドニューオリジナル
        FGA90N30D

        Mfr.#: FGA90N30D

        OMO.#: OMO-FGA90N30D-1190

        		 ブランドニューオリジナル
        FGA90N30DTU

        Mfr.#: FGA90N30DTU

        OMO.#: OMO-FGA90N30DTU-ON-SEMICONDUCTOR

        		 IGBT 300V 90A 219W TO3P
        FGA90N30TU

        Mfr.#: FGA90N30TU

        OMO.#: OMO-FGA90N30TU-ON-SEMICONDUCTOR

        		 IGBT 300V 90A 219W TO3P
        FGA90N33ANTD

        Mfr.#: FGA90N33ANTD

        OMO.#: OMO-FGA90N33ANTD-1190

        		 ブランドニューオリジナル
        FGA90N33AT

        Mfr.#: FGA90N33AT

        OMO.#: OMO-FGA90N33AT-1190

        		 ブランドニューオリジナル
        FGA90N33BTD

        Mfr.#: FGA90N33BTD

        OMO.#: OMO-FGA90N33BTD-1190

        		 ブランドニューオリジナル
        FGA90N33TD

        Mfr.#: FGA90N33TD

        OMO.#: OMO-FGA90N33TD-1190

        		 ブランドニューオリジナル
        可用性
        ストック:
        Available
        注文中:
        4000
        数量を入力してください:
        FGA90N33ATDTUの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
        参考価格（USD）
        量
        単価
        小計金額
        1
        $4.03
        $4.03
        10
        $3.43
        $34.30
        100
        $2.97
        $297.00
        250
        $2.82
        $705.00
        500
        $2.53
        $1 265.00
        1000
        $2.13
        $2 130.00
        2500
        $2.02
        $5 050.00
        5000
        $1.95
        $9 750.00
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