IPB034N03L G

Mfr. #:: IPB034N03L G
メーカー:: Infineon Technologies
説明:: Darlington Transistors MOSFET N-Ch 30V 80A D2PAK-2 OptiMOS 3
ライフサイクル:: メーカー新製品
データシート:: IPB034N03L G データシート
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詳しくは:: IPB034N03L G 詳しくは

製品属性
属性値

メーカー: インフィニオンテクノロジーズ

製品カテゴリ: トランジスタ-FET、MOSFET-シングル

シリーズ: OptiMOS 3

包装: リール

パーツエイリアス: IPB034N03LGATMA1 IPB034N03LGXT SP000304126

単位重量: 0.056438 oz

取り付けスタイル: SMD / SMT

商標名: OptiMOS

パッケージ-ケース: TO-263-7

テクノロジー: Si

チャネル数: 1 Channel

構成: 独身

トランジスタタイプ: 1 N-Channel

Pd-電力損失: 94 W

最高作動温度: + 175 C

最低作動温度: - 55 C

立ち下がり時間: 5.4 ns

立ち上がり時間: 6.4 ns

Vgs-Gate-Source-Voltage: 20 V

Id-連続-ドレイン-電流: 80 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 30 V

Rds-On-Drain-Source-Resistance: 3.4 mOhms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 35 ns

典型的なターンオン遅延時間: 9.2 ns

チャネルモード: 強化

Tags: IPB034N03LG, IPB034N03, IPB034, IPB03, IPB0, IPB

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB034N03L G 詳しくは

N-Channel OptiMOS™ Power MOSFETs: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.

N-Channel OptiMOS™ Power MOSFETs - EXPANSION: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More

Market price

モデル	メーカー	説明	ストック	価格
IPB034N03LGATMA1 DISTI # V72:2272_06384520	Infineon Technologies AG	Trans MOSFET N-CH 30V 80A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	1000	1000:$0.8271 500:$0.8359 250:$1.0310 100:$1.1498 25:$1.4036 10:$1.4191 1:$1.5649
IPB034N03LGATMA1 DISTI # V36:1790_06384520	Infineon Technologies AG	Trans MOSFET N-CH 30V 80A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	0
IPB034N03LGATMA1 DISTI # IPB034N03LGATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 30V 80A TO-263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	157In Stock	500:$0.9973 100:$1.2823 10:$1.5960 1:$1.7700
IPB034N03LGATMA1 DISTI # IPB034N03LGATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 30V 80A TO-263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	157In Stock	500:$0.9973 100:$1.2823 10:$1.5960 1:$1.7700
IPB034N03LGATMA1 DISTI # IPB034N03LGATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 30V 80A TO-263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Temporarily Out of Stock	10000:$0.7042 5000:$0.7193 2000:$0.7470 1000:$0.8023
IPB034N03LGATMA1 DISTI # 31056862	Infineon Technologies AG	Trans MOSFET N-CH 30V 80A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	1000	1000:$0.8891 500:$0.8986 250:$1.1083 100:$1.2360 25:$1.5089 10:$1.5255
IPB034N03LGATMA1 DISTI # 31053479	Infineon Technologies AG	Trans MOSFET N-CH 30V 80A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	1000	1000:$0.8035
IPB034N03LGXT DISTI # IPB034N03LGATMA1	Infineon Technologies AG	Trans MOSFET N-CH 30V 80A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB034N03LGATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 1000	1000:$0.7239 2000:$0.6979 4000:$0.6729 6000:$0.6499 10000:$0.6389
IPB034N03LG DISTI # SP000304126	Infineon Technologies AG	Trans MOSFET N-CH 30V 80A 3-Pin TO-263 T/R (Alt: SP000304126) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 0	1000:€1.0619 2000:€0.8909 4000:€0.7439 6000:€0.6479 10000:€0.6069
IPB034N03LGATMA1 DISTI # SP000304126	Infineon Technologies AG	Trans MOSFET N-CH 30V 80A 3-Pin TO-263 T/R (Alt: SP000304126) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 0	1000:€0.8899 2000:€0.7279 4000:€0.6679 6000:€0.6159 10000:€0.5719
IPB034N03LGATMA1 DISTI # 60R2650	Infineon Technologies AG	MOSFET, N CHANNEL, 30V, 80A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:80A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0028ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V RoHS Compliant: Yes	0	500:$0.8450 100:$1.0200 10:$1.3100 1:$1.4600
IPB034N03L G DISTI # 726-IPB034N03LG	Infineon Technologies AG	MOSFET N-Ch 30V 80A D2PAK-2 OptiMOS 3 RoHS: Compliant	1790	1:$1.4000 10:$1.2000 100:$0.9170 500:$0.8100 1000:$0.6400
IPB034N03LGATMA1	Infineon Technologies AG	Power Field-Effect Transistor, 80A I(D), 30V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	3000	1000:$0.5800 500:$0.6100 100:$0.6300 25:$0.6600 1:$0.7100
IPB034N03LGATMA1 DISTI # 7545424P	Infineon Technologies AG	MOSFET N-CH 30V 80A OPTIMOS3 LOGIC TO263, RL	1910	500:£0.5800 250:£0.6580 50:£0.7580 10:£0.8600
IPB034N03LGATMA1 DISTI # 7545424	Infineon Technologies AG	MOSFET N-CH 30V 80A OPTIMOS3 LOGIC TO263, PK	110	500:£0.5800 250:£0.6580 50:£0.7580 10:£0.8600 5:£1.0820
IPB034N03LGATMA1 DISTI # IPB034N03LGATMA1	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,30V,80A,94W,PG-TO263-3	954	1:$0.9190 3:$0.8270 10:$0.7305 100:$0.6351 1000:$0.5913
IPB034N03LGATMA1 DISTI # 1775527	Infineon Technologies AG	MOSFET, N CH, 80A, 30V, PG-TO263-3 RoHS: Compliant	1771	1000:$0.9640 500:$1.2200 100:$1.3800 10:$1.8100 1:$2.1100
IPB034N03LGATMA1 DISTI # 1775527	Infineon Technologies AG	MOSFET, N CH, 80A, 30V, PG-TO263-3 RoHS: Compliant	1871	500:£0.5870 250:£0.6260 100:£0.6650 25:£0.8710 5:£1.0100

画像	モデル	説明
	Mfr.#: IPB034N03L G OMO.#: OMO-IPB034N03L-G	MOSFET N-Ch 30V 80A D2PAK-2 OptiMOS 3
	Mfr.#: IPB034N06L3 G OMO.#: OMO-IPB034N06L3-G	MOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3
	Mfr.#: IPB034N06L3GATMA1 OMO.#: OMO-IPB034N06L3GATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 60V 90A TO263-3
	Mfr.#: IPB034N06L3GATMA1-CUT TAPE OMO.#: OMO-IPB034N06L3GATMA1-CUT-TAPE-1190	ブランドニューオリジナル
	Mfr.#: IPB034N06L3GATMA1 , 2SD1 OMO.#: OMO-IPB034N06L3GATMA1-2SD1-1190	ブランドニューオリジナル
	Mfr.#: IPB034N06N3 OMO.#: OMO-IPB034N06N3-1190	ブランドニューオリジナル
	Mfr.#: IPB034N06N3G OMO.#: OMO-IPB034N06N3G-1190	Trans MOSFET N-CH 60V 100A 7-Pin(6+Tab) TO-263 - Bulk (Alt: IPB034N06N3G)
	Mfr.#: IPB034N06N3G , MS10-05AT OMO.#: OMO-IPB034N06N3G-MS10-05AT-1190	ブランドニューオリジナル
	Mfr.#: IPB034N06L3 G OMO.#: OMO-IPB034N06L3-G-124	Darlington Transistors MOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3
	Mfr.#: IPB034N06N3 G OMO.#: OMO-IPB034N06N3-G-126	IGBT Transistors MOSFET N-Ch 60V 100A D2PAK-6

IPB034N03L G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes