STU6N65M2

Mfr. #:: STU6N65M2
メーカー:: STMicroelectronics
説明:: Darlington Transistors MOSFET POWER MOSFET
ライフサイクル:: メーカー新製品
データシート:: STU6N65M2 データシート
配達:: DHL FedEx Ups TNT EMS
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ECAD Model:
詳しくは:: STU6N65M2 詳しくは STU6N65M2 Product Details

製品属性
属性値

メーカー: STMicroelectronics

製品カテゴリ: トランジスタ-FET、MOSFET-シングル

シリーズ: MDmesh M2

包装: チューブ

単位重量: 0.139332 oz

取り付けスタイル: スルーホール

商標名: MDmesh

パッケージ-ケース: IPAK-3

テクノロジー: Si

Pd-電力損失: 60 W

最高作動温度: + 150 C

最低作動温度: - 55 C

立ち下がり時間: 20 ns

立ち上がり時間: 7 ns

Vgs-Gate-Source-Voltage: 25 V

Id-連続-ドレイン-電流: 4 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 650 V

Vgs-th-Gate-Source-Threshold-Voltage: 3 V

Rds-On-Drain-Source-Resistance: 1.35 Ohms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 6.5 ns

典型的なターンオン遅延時間: 19 ns

Qg-Gate-Charge: 9.8 nC

Tags: STU6N65, STU6N6, STU6N, STU6, STU

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STU6N65M2 説明

***p One Stop Japan: Trans MOSFET N-CH 650V 4A 3-Pin(3+Tab) IPAK Tube

***et Europe: Trans MOSFET N-CH 650V 4A 3-Pin IPAK Tube

***i-Key: MOSFET N-CH 650V 4A IPAK

***ronik: N-CH 650V 4A 1350mOhm TO251

***ark: Ptd High Voltage

***ment14 APAC: Prices include import duty and tax. MOSFET, N CHANNEL, 650V, 4A, TO-251-3; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:650V; On Resistance Rds(on):1.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:60W; Transistor Case Style:TO-251; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (17-Dec-2015)

***nell: MOSFET, CANALE N, 650V, 4A, TO-251-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:4A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):1.2ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:60W; Modello Case Transistor:TO-251; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (17-Dec-2015)

STU6N65M2 詳しくは

Standard Products: STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.

MDmesh™ II Power MOSFETs: STMicroelectronics 600 and 650V MDmesh™ M2 series of super-junction Power MOSFETs are optimized for soft-switching applications (LLC resonant power supplies) thanks to the optimized trade-off between RDS(on), gate charge (Qg) and intrinsic capacitances (Ciss, Coss). They also are suitable for PFC applications, especially at light loads.

Market price

モデル	メーカー	説明	ストック	価格
STU6N65M2 DISTI # 30609733	STMicroelectronics	Trans MOSFET N-CH 650V 4A 3-Pin(3+Tab) IPAK Tube RoHS: Compliant	50	50:$0.8377 13:$1.0863
STU6N65M2 DISTI # 497-15044-5-ND	STMicroelectronics	MOSFET N-CH 650V 4A IPAK RoHS: Compliant Min Qty: 1 Container: Tube	770In Stock	1050:$0.7013 525:$0.8882 150:$1.1454 75:$1.3091 1:$1.6400
STU6N65M2 DISTI # C1S730200975386	STMicroelectronics	Trans MOSFET N-CH 650V 4A 3-Pin(3+Tab) IPAK Tube RoHS: Compliant	50	50:$0.6630 10:$0.8590 1:$1.6500
STU6N65M2 DISTI # STU6N65M2	STMicroelectronics	Trans MOSFET N-CH 650V 4A 3-Pin IPAK Tube - Rail/Tube (Alt: STU6N65M2) RoHS: Compliant Min Qty: 3000 Container: Tube	Americas - 0	3000:$0.6369 6000:$0.6069 12000:$0.5789 18000:$0.5539 30000:$0.5419
STU6N65M2 DISTI # 40Y2611	STMicroelectronics	Power MOSFET, N Channel, 4 A, 650 V, 1.2 ohm, 10 V, 3 V RoHS Compliant: Yes	1382	1:$1.4000 10:$1.1900 100:$0.9140 500:$0.8080 1000:$0.6380 2500:$0.5920 10000:$0.5450
STU6N65M2 DISTI # 511-STU6N65M2	STMicroelectronics	MOSFET N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in IPAK package RoHS: Compliant	2523	1:$1.4000 10:$1.1900 100:$0.9140 500:$0.8080 1000:$0.6380 3000:$0.5660 9000:$0.5450
STU6N65M2-S DISTI # 511-STU6N65M2-S	STMicroelectronics	MOSFET	0	3000:$0.4130
STU6N65M2	STMicroelectronics		812
STU6N65M2	ST Microwave Corporation	Power Field-Effect Transistor RoHS: Compliant	Europe - 3000
STU6N65M2	STMicroelectronics		3544
STU6N65M2 DISTI # 2460384	STMicroelectronics	MOSFET, N CHANNEL, 650V, 4A, TO-251-3 RoHS: Compliant	1382	1:$2.2200 10:$1.8800 100:$1.4500 500:$1.2900 1000:$1.0100 3000:$0.8960 9000:$0.8630
STU6N65M2 DISTI # 2460384	STMicroelectronics	MOSFET, N CHANNEL, 650V, 4A, TO-251-3 RoHS: Compliant	1406	5:£1.0500 25:£0.9490 100:£0.7310 250:£0.6880 500:£0.6450

画像	モデル	説明
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STU6N65M2

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes