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MRF6V2010NR1

MRF6V2010NR1
Mfr. #:
MRF6V2010NR1
メーカー:
NXP / Freescale
説明:
RF MOSFET Transistors VHV6 10W TO270-2N
ライフサイクル:
メーカー新製品
データシート:
MRF6V2010NR1 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
製品属性
属性値
メーカー：
NXP
製品カテゴリ：
RFMOSFETトランジスタ
JBoss：
E
トランジスタの極性：
Nチャネル
テクノロジー：
Si
Vds-ドレイン-ソース間降伏電圧：
110 V
利得：
23.9 dB
出力電力：
10 W
最低動作温度：
- 65 C
最高作動温度：
+ 150 C
取り付けスタイル：
SMD / SMT
パッケージ/ケース：
TO-270
包装：
リール
構成：
独身
高さ：
2.08 mm
長さ：
9.7 mm
動作周波数：
450 MHz
シリーズ：
MRF6V2010N
タイプ：
RFパワーMOSFET
幅：
6.15 mm
ブランド：
NXP /フリースケール
チャネルモード：
強化
感湿性：
はい
製品タイプ：
RFMOSFETトランジスタ
ファクトリーパックの数量：
500
サブカテゴリ：
MOSFET
Vgs-ゲート-ソース間電圧：
- 5 V, 10 V
Vgs th-ゲート-ソースしきい値電圧：
1.68 V
パーツ番号エイリアス：
935309669528
単位重量：
0.018679 oz
Tags
MRF6V2010N, MRF6V20, MRF6V2, MRF6V, MRF6, MRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    G***a
    G***a
    IT

    ok

    2019-01-22
    T***t
    T***t
    SK

    Works great

    2019-03-25
    E***v
    E***v
    RU

    It's okay. Shipping 55 days.

    2019-07-10
    Y***v
    Y***v
    RU

    Order on march 7, came on april 26.

    2019-04-26
***W
RF Power Transistor,10 to 450 MHz, 10 W, Typ Gain in dB is 23.9 @ 220 MHz, 50 V, LDMOS, SOT1732
*** Semiconductors SCT
Lateral N-Channel Broadband RF Power MOSFET, 10-450 MHz, 10 W, 50 V, FM2F
***nell
TRANSISTOR, RF, 110V, TO-270-2; Drain Source Voltage Vds: 110VDC; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 10MHz; Operating Frequency Max: 450MHz; RF Transistor Case: TO-270; No. of Pins: 2Pins; Operating Temperature Max: 225°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)
***W
RF Power Transistor,450 to 1500 MHz, 10 W, Typ Gain in dB is 18 @ 960 MHz, 28 V, LDMOS, SOT1732
*** Semiconductors SCT
Lateral N-Channel Broadband RF Power MOSFET, 450-1500 MHz, 10 W, 28 V, FM2F
***ment14 APAC
RF MOSFET, N CHANNEL, 68V, TO-270; Drain Source Voltage Vds:68V; RF Transistor Case:TO-270; MSL:MSL 3 - 168 hours; Termination Type:SMD; Gain:18dB; Peak Reflow Compatible (260 C):Yes; Transistor Polarity:N Channel
***ark
RF MOSFET, N CHANNEL, 68V, TO-270; Transistor Type:RF FET; Drain Source Voltage, Vds:68V; RF Transistor Case:TO-270; Gain:18dB; Gate-Source Voltage:12V; Leaded Process Compatible:Yes; Operating Frequency Max:900MHz ;RoHS Compliant: Yes
***escale Semiconductor
Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET, 880 MHz, 10 W Avg., 28 V
***W
RF Power Transistor,865 to 960 MHz, 45 W, Typ Gain in dB is 22.1 @ 880 MHz, 28 V, LDMOS, SOT1732
***ment14 APAC
RF MOSFET, N CHANNEL, 66V, TO-270; Transistor Type:RF MOSFET; Drain Source Voltage Vds:66V; Operating Frequency Min:920MHz; Operating Frequency Max:960MHz; RF Transistor Case:TO-270; No. of Pins:2; Filter Terminals:Surface Mount
***ark
RF MOSFET, N CHANNEL, 66V, TO-270; Transistor Type:RF FET; Drain Source Voltage, Vds:66V; RF Transistor Case:TO-270; Gain:22.1dB; Gate-Source Voltage:12V; Leaded Process Compatible:Yes; Operating Frequency Max:880MHz ;RoHS Compliant: Yes
***escale Semiconductor
Single W-CDMA Lateral N-Channel RF Power MOSFET, 2300-2700 MHz, 3 W Avg., 28 V
***et
Transistor RF FET N-CH 68V 2300MHz to 2700MHz 3-Pin TO-270 T/R
*** Electronic Components
RF MOSFET Transistors HV6 2.7GHZ 15W
***S
French Electronic Distributor since 1988
***i-Key Marketplace
RF S BAND, N-CHANNEL , TO-270AA
モデル メーカー 説明 ストック 価格
MRF6V2010NR1
DISTI # V72:2272_07204046		NXP SemiconductorsTrans RF MOSFET N-CH 110V 3-Pin TO-270 T/R
RoHS: Compliant		469
  • 250:$13.5700
  • 100:$15.0800
  • 25:$18.0100
  • 10:$18.0200
  • 1:$19.4600
MRF6V2010NR1
DISTI # MRF6V2010NR1CT-ND		NXP SemiconductorsFET RF 110V 220MHZ TO270-2
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		148In Stock
  • 100:$15.7836
  • 10:$18.4830
  • 1:$20.0400
MRF6V2010NR1
DISTI # MRF6V2010NR1DKR-ND		NXP SemiconductorsFET RF 110V 220MHZ TO270-2
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		148In Stock
  • 100:$15.7836
  • 10:$18.4830
  • 1:$20.0400
MRF6V2010NR1
DISTI # MRF6V2010NR1TR-ND		NXP SemiconductorsFET RF 110V 220MHZ TO270-2
RoHS: Compliant
Min Qty: 500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 500:$13.9125
MRF6V2010NR1
DISTI # 23552799		NXP SemiconductorsTrans RF MOSFET N-CH 110V 3-Pin TO-270 T/R
RoHS: Compliant		500
  • 500:$16.8667
MRF6V2010NR1
DISTI # 27607406		NXP SemiconductorsTrans RF MOSFET N-CH 110V 3-Pin TO-270 T/R
RoHS: Compliant		469
  • 250:$13.5800
  • 100:$15.0800
  • 25:$18.0200
  • 10:$18.0400
  • 1:$19.4800
MRF6V2010NR1
DISTI # MRF6V2010NR1		NXP SemiconductorsTrans MOSFET N-CH 110V 3-Pin TO-270 T/R (Alt: MRF6V2010NR1)
RoHS: Compliant
Min Qty: 500
Container: Tape and Reel		Europe - 393
  • 500:€14.5900
  • 1000:€13.9900
  • 2000:€13.3900
  • 3000:€12.4900
  • 5000:€11.5900
MRF6V2010NR1
DISTI # MRF6V2010NR1		NXP SemiconductorsTrans MOSFET N-CH 110V 3-Pin TO-270 T/R - Tape and Reel (Alt: MRF6V2010NR1)
RoHS: Compliant
Min Qty: 500
Container: Reel		Americas - 0
  • 500:$13.5900
  • 1000:$13.4900
  • 2000:$13.4900
  • 3000:$13.4900
  • 5000:$13.3900
MRF6V2010NR1
DISTI # 31AC6681		NXP SemiconductorsTRANSISTOR, RF, 110V, TO-270-2,Drain Source Voltage Vds:110VDC,Continuous Drain Current Id:-,Power Dissipation Pd:-,Operating Frequency Min:10MHz,Operating Frequency Max:450MHz,RF Transistor Case:TO-270,No. of Pins:2Pins,RoHS Compliant: Yes529
  • 1:$25.2600
  • 10:$23.3000
  • 25:$20.3300
  • 50:$20.1200
  • 100:$19.9000
  • 250:$19.0600
MRF6V2010NR1
DISTI # 47M2186		NXP SemiconductorsRF MOSFET, N CHANNEL, 110V, TO-270, FULL REEL,Drain Source Voltage Vds:110V,Continuous Drain Current Id:-,Power Dissipation Pd:10W,Operating Frequency Min:10MHz,Operating Frequency Max:450MHz,RF Transistor Case:TO-272 RoHS Compliant: Yes0
  • 1:$24.7400
  • 500:$13.9800
MRF6V2010NR1.
DISTI # 27AC9275		NXP SemiconductorsLATERAL N-CHANNEL BROADBAND RF POWER MOSFET, 10-450 MHZ, 10 W, 50 V0
  • 1:$24.7400
  • 500:$13.9800
MRF6V2010NR1NXP SemiconductorsRF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
RoHS: Compliant		1000Reel
  • 500:$12.0500
MRF6V2010NR1
DISTI # 841-MRF6V2010NR1		NXP SemiconductorsRF MOSFET Transistors VHV6 10W TO270-2N
RoHS: Compliant		1529
  • 1:$25.2600
  • 5:$24.1500
  • 10:$23.3000
  • 25:$20.3300
  • 100:$19.9000
  • 250:$19.0600
  • 500:$17.5400
MRF6V2010NR1
DISTI # MRF6V2010NR1		NXP SemiconductorsRF POWER TRANSISTOR
RoHS: Compliant		1265
  • 1:$21.8800
  • 10:$19.7800
  • 25:$18.7000
MRF6V2010NR1
DISTI # C1S233100359787		NXP SemiconductorsTrans RF MOSFET N-CH 110V 3-Pin TO-270 T/R
RoHS: Compliant		469
  • 250:$13.5800
  • 100:$15.0800
  • 25:$18.0200
  • 10:$18.0400
  • 1:$19.4800
MRF6V2010NR1
DISTI # 2776251		NXP SemiconductorsTRANSISTOR, RF, 110V, TO-270-2
RoHS: Compliant		529
  • 1:£15.3200
  • 5:£14.7300
  • 10:£14.1400
  • 50:£13.1100
  • 100:£12.0700
MRF6V2010NR1
DISTI # 2776251		NXP SemiconductorsTRANSISTOR, RF, 110V, TO-270-2
RoHS: Compliant		529
  • 1:$30.3700
  • 5:$29.1100
  • 10:$26.8700
  • 50:$25.4000
  • 100:$24.0900
  • 250:$22.9000
MRF6V2010NR1
DISTI # XSFT00000023892		NXP SemiconductorsMNR18 SERIES 8 ELEMENT 0602 X 8 100 K 5 % SMTCOMPACT CHIP RESISTOR NETWORK
RoHS: Compliant		1000
  • 500:$21.4600
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OMO.#: OMO-MRF1K50NR5-NXP-SEMICONDUCTORS

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可用性
ストック:
Available
注文中:
1984
数量を入力してください:
MRF6V2010NR1の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格（USD）
量
単価
小計金額
1
$25.26
$25.26
5
$24.15
$120.75
10
$23.30
$233.00
25
$20.33
$508.25
100
$19.90
$1 990.00
250
$19.06
$4 765.00
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