SCT3030ALGC11

SCT3030ALGC11
Mfr. #:
SCT3030ALGC11
メーカー:
Rohm Semiconductor
説明:
MOSFET N-Ch 650V SiC 70A 30mOhm TrenchMOS
ライフサイクル:
メーカー新製品
データシート:
SCT3030ALGC11 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
SCT3030ALGC11 詳しくは
製品属性
属性値
メーカー:
ロームセミコンダクター
製品カテゴリ:
MOSFET
JBoss:
Y
テクノロジー:
SiC
取り付けスタイル:
スルーホール
パッケージ/ケース:
TO-247N-3
チャネル数:
1 Channel
トランジスタの極性:
Nチャネル
Vds-ドレイン-ソース間降伏電圧:
650 V
Id-連続ドレイン電流:
70 A
Rds On-ドレイン-ソース抵抗:
30 mOhms
Vgs th-ゲート-ソースしきい値電圧:
2.7 V
Vgs-ゲート-ソース間電圧:
- 4 V, 22 V
Qg-ゲートチャージ:
104 nC
最低動作温度:
- 55 C
最高作動温度:
+ 175 C
Pd-消費電力:
262 W
構成:
独身
チャネルモード:
強化
包装:
チューブ
シリーズ:
SCT3x
トランジスタタイプ:
1 N-Channel
ブランド:
ロームセミコンダクター
フォワード相互コンダクタンス-最小:
9.4 S
立ち下がり時間:
27 ns
製品タイプ:
MOSFET
立ち上がり時間:
41 ns
ファクトリーパックの数量:
450
サブカテゴリ:
MOSFET
典型的なターンオフ遅延時間:
48 ns
典型的なターンオン遅延時間:
22 ns
パーツ番号エイリアス:
SCT3030AL
単位重量:
0.211644 oz
Tags
SCT303, SCT30, SCT3, SCT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
SCT3030AL Series 650 V 70 A 39 mOhm N-Channel SiC Power Mosfet - TO-247N
***ical
Trans MOSFET N-CH SiC 650V 70A 3-Pin(3+Tab) TO-247N Tube
***ark
Mosfet, N-Ch, 650V, 70A, To-247N-3; Transistor Polarity:n Channel; Continuous Drain Current Id:70A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.03Ohm; Rds(On) Test Voltage Vgs:18V; Threshold Voltage Vgs:5.6V Rohs Compliant: Yes
Silicon Carbide (SiC) Power Devices
ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. SiC also allows designers to use fewer components, further reducing design complexity.
SCT3x 3rd Generation SiC Trench MOSFETs
ROHM Semiconductor® SCT3x Series SiC Trench MOSFETs utilize a proprietary trench gate structure that reduces ON resistance by 50% and input capacitance by 35% compared with planar-type SiC MOSFETs. This results in significantly lower switching loss and faster switching speeds, improving efficiency operation while reducing power loss in a variety of equipment. The lineup includes 650V and 1200V variants for broad applicability.
N-Channel SiC Power MOSFETs
ROHM Semiconductor N-Channel SiC (Silicon Carbide) Power MOSFETs feature no tail current during switching, resulting in faster operation and reduced switching loss. In addition, low ON resistance minimizes power dissipation and provides greater energy savings.
Industrial Product Solutions
ROHM Industrial Product Solutions supply a quality lineup of products from passive devices and discretes to ICs and modules, providing total solutions at the system level. The Industrial Product Solutions have achieved high quality, technological capability, and a stable supply of products (over 10 years) creating innovative solutions in a highly integrated production system. These products meet the rapidly evolving needs of the industrial equipment market. ROHM continues to leverage its strengths providing optimized solutions tailored to customer sets.
モデル メーカー 説明 ストック 価格
SCT3030ALGC11
DISTI # 32733236
ROHM SemiconductorTrans MOSFET N-CH SiC 650V 70A 3-Pin(3+Tab) TO-247N Tube806
  • 1:$30.7500
SCT3030ALGC11
DISTI # 32370958
ROHM SemiconductorTrans MOSFET N-CH SiC 650V 70A 3-Pin(3+Tab) TO-247N Tube60
  • 30:$27.5312
SCT3030ALGC11
DISTI # SCT3030ALGC11-ND
ROHM SemiconductorMOSFET NCH 650V 70A TO247N
RoHS: Compliant
Min Qty: 1
Container: Tube
2706In Stock
  • 510:$17.6640
  • 120:$19.4560
  • 30:$21.7600
  • 10:$22.7840
  • 1:$24.7000
SCT3030ALGC11
DISTI # C1S625901667552
ROHM SemiconductorMOSFETs806
  • 200:$15.4000
  • 100:$15.8000
  • 50:$16.3000
  • 10:$18.4000
  • 5:$19.9000
  • 1:$24.6000
SCT3030ALGC11
DISTI # SCT3030ALGC11
ROHM SemiconductorTrans MOSFET N 650V 70A 3-Pin TO-247N Tube (Alt: SCT3030ALGC11)
RoHS: Compliant
Min Qty: 1
Container: Tube
Europe - 0
  • 1000:€22.8900
  • 500:€24.4900
  • 100:€25.3900
  • 50:€26.3900
  • 25:€27.4900
  • 10:€28.5900
  • 1:€31.1900
SCT3030ALGC11
DISTI # SCT3030ALGC11
ROHM SemiconductorTrans MOSFET N 650V 70A 3-Pin TO-247N Tube - Rail/Tube (Alt: SCT3030ALGC11)
RoHS: Compliant
Min Qty: 450
Container: Tube
Americas - 0
  • 4500:$16.3900
  • 2700:$16.7900
  • 1800:$17.7900
  • 900:$18.8900
  • 450:$20.1900
SCT3030ALGC11
DISTI # SCT3030ALGC11
ROHM SemiconductorTrans MOSFET N 650V 70A 3-Pin TO-247N Tube (Alt: SCT3030ALGC11)
RoHS: Compliant
Min Qty: 450
Container: Tube
Asia - 0
    SCT3030ALGC11
    DISTI # 05AC9460
    ROHM SemiconductorMOSFET, N-CH, 650V, 70A, TO-247N-3,Transistor Polarity:N Channel,Continuous Drain Current Id:70A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.03ohm,Rds(on) Test Voltage Vgs:18V,Threshold Voltage Vgs:5.6V RoHS Compliant: Yes20
    • 250:$23.8100
    • 100:$24.2400
    • 50:$24.7100
    • 25:$25.5200
    • 10:$26.4200
    • 5:$27.4300
    • 1:$28.4700
    SCT3030ALGC11ROHM SemiconductorSCT3030AL Series 650 V 70 A 39 mOhm N-Channel SiC Power Mosfet - TO-247N
    RoHS: Compliant
    90Tube
    • 30:$19.5800
    SCT3030ALGC11
    DISTI # 755-SCT3030ALGC11
    ROHM SemiconductorMOSFET N-Ch 650V SiC 70A 30mOhm TrenchMOS
    RoHS: Compliant
    568
    • 1:$24.7100
    • 5:$24.4500
    • 10:$22.7900
    • 25:$21.7700
    • 100:$19.4600
    • 250:$18.5600
    SCT3030ALGC11ROHM Semiconductor 58
    • 35:$27.4210
    • 17:$29.0340
    • 1:$32.2600
    SCT3030ALGC11
    DISTI # TMOSP11652
    ROHM SemiconductorSiC-N 650V 70A 39mOhmTO247-3
    RoHS: Compliant
    Stock DE - 4080Stock HK - 0Stock US - 0
    • 30:$38.5000
    • 60:$36.3000
    • 90:$34.1000
    • 120:$29.7000
    SCT3030ALGC11
    DISTI # 2678783
    ROHM SemiconductorMOSFET, N-CH, 650V, 70A, TO-247N6
    • 100:£21.0200
    • 50:£22.5200
    • 10:£24.4000
    • 5:£27.2100
    • 1:£32.8400
    SCT3030ALGC11
    DISTI # 2678783
    ROHM SemiconductorMOSFET, N-CH, 650V, 70A, TO-247N
    RoHS: Compliant
    10
    • 1:$44.8500
    SCT3030ALGC11ROHM SemiconductorRoHS(ship within 1day)73
    • 1:$18.7500
    • 10:$17.2500
    • 50:$16.8800
    • 100:$16.6300
    • 500:$16.2500
    • 1000:$16.1300
    SCT3030ALGC11ROHM SemiconductorMOSFET N-Ch 650V SiC 70A 30mOhm TrenchMOS
    RoHS: Compliant
    Americas - 180
    • 30:$21.4600
    • 60:$21.1200
    • 90:$20.6300
    • 120:$19.3800
    SCT3030ALGC11
    DISTI # XSFP00000114818
    ROHM SEMICONDUCTOR 
    RoHS: Compliant
    60 in Stock0 on Order
    • 60:$26.1100
    • 30:$27.9700
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    MOSFET NCH 1.2KV 72A TO247N
    可用性
    ストック:
    514
    注文中:
    2497
    数量を入力してください:
    SCT3030ALGC11の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
    参考価格(USD)
    単価
    小計金額
    1
    $24.71
    $24.71
    5
    $24.45
    $122.25
    10
    $22.79
    $227.90
    25
    $21.77
    $544.25
    100
    $19.46
    $1 946.00
    250
    $18.56
    $4 640.00
    500
    $17.67
    $8 835.00
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