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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
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| モデル | メーカー | 説明 | ストック | 価格 |
|---|---|---|---|---|
| IPB60R950C6ATMA1 DISTI # IPB60R950C6ATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 600V 4.4A TO263 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| IPB60R950C6ATMA1 DISTI # IPB60R950C6ATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 600V 4.4A TO263 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| IPB60R950C6ATMA1 DISTI # IPB60R950C6ATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 600V 4.4A TO263 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| IPB60R950C6ATMA1 DISTI # IPB60R950C6ATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 600V 4.4A 4-Pin(3+Tab) TO-263 - Bulk (Alt: IPB60R950C6ATMA1) Min Qty: 625 Container: Bulk | Americas - 0 |
|
| IPB60R950C6ATMA1 DISTI # 30T1834 | Infineon Technologies AG | MOSFET, N CH, 650V, 4.4A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:4.4A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.86ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Product Range:- RoHS Compliant: Yes | 0 | |
| IPB60R950C6ATMA1 DISTI # N/A | Infineon Technologies AG | MOSFET LOW POWER_LEGACY | 0 | |
| IPB60R950C6 DISTI # 726-IPB60R950C6 | Infineon Technologies AG | MOSFET N-Ch 650V 4.4A D2PAK-2 CoolMOS C6 RoHS: Compliant | 0 |
|
| IPB60R950C6ATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 4.4A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 4 |
|
| IPB60R950C6ATMA1 DISTI # 8269500P | Infineon Technologies AG | MOSFET N-CH 4.4A 600V COOLMOS C6 TO263-4, RL | 5000 |
|
| IPB60R950C6ATMA1 DISTI # 1860809 | Infineon Technologies AG | MOSFET,N CH,600V,4.4A,TO263 RoHS: Compliant | 0 |
|
| 画像 | モデル | 説明 |
|---|---|---|
|
Mfr.#: IPB60R125C6 OMO.#: OMO-IPB60R125C6 |
MOSFET N-Ch 650V 30A D2PAK-2 CoolMOS C6 |
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Mfr.#: IPB60R099C6 OMO.#: OMO-IPB60R099C6 |
MOSFET N-Ch 650V 38A D2PAK-2 CoolMOS C6 |
|
Mfr.#: IPB60R280CFD7ATMA1 OMO.#: OMO-IPB60R280CFD7ATMA1 |
MOSFET |
|
Mfr.#: IPB60R280P6ATMA1 |
MOSFET N-CH TO263-3 |
|
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Mfr.#: IPB60R330P6ATMA1 |
MOSFET N-CH TO263-3 |
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Mfr.#: IPB60R099C6 OMO.#: OMO-IPB60R099C6-1190 |
MOSFET N-Ch 650V 38A D2PAK-2 CoolMOS C6 |
|
Mfr.#: IPB60R099C7ATMA1 |
MOSFET N-CH 650V 22A TO263-3 |
|
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Mfr.#: IPB60R199CR OMO.#: OMO-IPB60R199CR-1190 |
ブランドニューオリジナル |
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|
Mfr.#: IPB60R299CPATMA1 |
MOSFET N-CH 600V 11A TO-263 |
|
|
Mfr.#: IPB60R385CPATMA1 |
MOSFET N-CH 600V 9A TO-263 |