MRF6S20010GNR1

MRF6S20010GNR1
Mfr. #:
MRF6S20010GNR1
メーカー:
NXP / Freescale
説明:
RF MOSFET Transistors HV6 2GHZ 10W
ライフサイクル:
メーカー新製品
データシート:
MRF6S20010GNR1 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
製品属性
属性値
メーカー:
NXP
製品カテゴリ:
RFMOSFETトランジスタ
JBoss:
E
トランジスタの極性:
Nチャネル
テクノロジー:
Si
Vds-ドレイン-ソース間降伏電圧:
68 V
最低動作温度:
- 65 C
最高作動温度:
+ 150 C
取り付けスタイル:
SMD / SMT
パッケージ/ケース:
TO-270
包装:
リール
構成:
独身
高さ:
2.08 mm
長さ:
9.7 mm
シリーズ:
MRF6S20010N
幅:
6.15 mm
ブランド:
NXP /フリースケール
チャネルモード:
強化
感湿性:
はい
製品タイプ:
RFMOSFETトランジスタ
ファクトリーパックの数量:
500
サブカテゴリ:
MOSFET
Vgs-ゲート-ソース間電圧:
- 0.5 V, 12 V
パーツ番号エイリアス:
935313674528
単位重量:
0.019330 oz
Tags
MRF6S20, MRF6S2, MRF6S, MRF6, MRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    B***r
    B***r
    DE

    ok

    2019-03-16
    E**o
    E**o
    RU

    The product corresponds to the description. I did not check in the work.

    2019-01-27
***W
RF Power Transistor,1600 to 2200 MHz, 10 W, Typ Gain in dB is 15.5 @ 2170 MHz, 28 V, LDMOS, SOT1731
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RF FET, 68V, 2.2GHZ-1.6GHZ, TO-270G; Drain Source Voltage Vds: 68V; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 2.2GHz; Operating Frequency Max: 1.6GHz; RF Transistor Case: TO-270G; No. of
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***ment14 APAC
RF MOSFET, N CHANNEL, 68V, TO-270; Drain Source Voltage Vds:68V; RF Transistor Case:TO-270; MSL:MSL 3 - 168 hours; Termination Type:SMD; Gain:18dB; Peak Reflow Compatible (260 C):Yes; Transistor Polarity:N Channel
***ark
RF MOSFET, N CHANNEL, 68V, TO-270; Transistor Type:RF FET; Drain Source Voltage, Vds:68V; RF Transistor Case:TO-270; Gain:18dB; Gate-Source Voltage:12V; Leaded Process Compatible:Yes; Operating Frequency Max:900MHz ;RoHS Compliant: Yes
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RF MOSFET, N CHANNEL, 66V, TO-270; Transistor Type:RF FET; Drain Source Voltage, Vds:66V; RF Transistor Case:TO-270; Gain:21.1dB; Gate-Source Voltage:12V; Leaded Process Compatible:Yes; Operating Frequency Max:880MHz ;RoHS Compliant: Yes
***nell
TRANSISTOR, RF, 66V, TO-270-2; Drain Source Voltage Vds: 66VDC; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 470MHz; Operating Frequency Max: 960MHz; RF Transistor Case: TO-270; No. of Pins: 2Pins; Operating Temperature Max: 225°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)
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***ment14 APAC
RF MOSFET, N CHANNEL, 66V, TO-270; Transistor Type:RF MOSFET; Drain Source Voltage Vds:66V; Operating Frequency Min:920MHz; Operating Frequency Max:960MHz; RF Transistor Case:TO-270; No. of Pins:2; Filter Terminals:Surface Mount
***ark
RF MOSFET, N CHANNEL, 66V, TO-270; Transistor Type:RF FET; Drain Source Voltage, Vds:66V; RF Transistor Case:TO-270; Gain:22.1dB; Gate-Source Voltage:12V; Leaded Process Compatible:Yes; Operating Frequency Max:880MHz ;RoHS Compliant: Yes
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TRANSISTOR, RF, 133V, TO-270WB-4; Drain Source Voltage Vds: 133VDC; Continuous Drain Current Id: -; Power Dissipation Pd: 952W; Operating Frequency Min: 1.8MHz; Operating Frequency Max: 600MHz; RF Transistor Case: TO-270WB; No. of Pins: 4Pins; Operating Temperature Max: 225°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)
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TRANSISTOR, RF, 110V, TO-270-2; Drain Source Voltage Vds: 110VDC; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 10MHz; Operating Frequency Max: 450MHz; RF Transistor Case: TO-270; No. of Pins: 2Pins; Operating Temperature Max: 225°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)
モデル メーカー 説明 ストック 価格
MRF6S20010GNR1
DISTI # 11962144
NXP SemiconductorsTrans RF MOSFET N-CH 68V 3-Pin TO-270 GULL T/R349
  • 2:$46.9500
MRF6S20010GNR1
DISTI # MRF6S20010GNR1CT-ND
NXP SemiconductorsFET RF 68V 2.17GHZ TO270-2 GW
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
1311In Stock
  • 100:$31.3604
  • 10:$36.1180
  • 1:$38.7100
MRF6S20010GNR1
DISTI # MRF6S20010GNR1DKR-ND
NXP SemiconductorsFET RF 68V 2.17GHZ TO270-2 GW
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
1311In Stock
  • 100:$31.3604
  • 10:$36.1180
  • 1:$38.7100
MRF6S20010GNR1
DISTI # MRF6S20010GNR1TR-ND
NXP SemiconductorsFET RF 68V 2.17GHZ TO270-2 GW
RoHS: Compliant
Min Qty: 500
Container: Tape & Reel (TR)
1000In Stock
  • 500:$27.9272
MRF6S20010GNR1
DISTI # MRF6S20010GNR1
NXP SemiconductorsTrans MOSFET N-CH 68V 3-Pin TO-270 T/R (Alt: MRF6S20010GNR1)
RoHS: Compliant
Min Qty: 500
Container: Tape and Reel
Asia - 0
  • 500:$25.6930
  • 1000:$24.9793
  • 1500:$24.3042
  • 2500:$23.6646
  • 5000:$23.3573
  • 12500:$23.0578
  • 25000:$22.4814
MRF6S20010GNR1
DISTI # MRF6S20010GNR1
NXP SemiconductorsTrans MOSFET N-CH 68V 3-Pin TO-270 T/R - Tape and Reel (Alt: MRF6S20010GNR1)
RoHS: Compliant
Min Qty: 500
Container: Reel
Americas - 0
  • 500:$30.5900
  • 1000:$29.3900
  • 2000:$28.1900
  • 3000:$27.1900
  • 5000:$26.6900
MRF6S20010GNR1
DISTI # 61AC0767
NXP SemiconductorsRF FET, 68V, 2.2GHZ-1.6GHZ, TO-270G,Drain Source Voltage Vds:68V,Continuous Drain Current Id:-,Power Dissipation Pd:-,Operating Frequency Min:2.2GHz,Operating Frequency Max:1.6GHz,RF Transistor Case:TO-270G,No. of Pins:2Pins,, RoHS Compliant: Yes479
  • 1:$38.7100
  • 10:$36.1200
  • 25:$32.7400
  • 50:$32.0500
  • 100:$31.3600
  • 250:$28.9800
MRF6S20010GNR1
DISTI # 81K3163
NXP SemiconductorsMOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)0
    MRF6S20010GNR1NXP SemiconductorsRF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-270BA
    RoHS: Compliant
    500
    • 1000:$30.8800
    • 500:$32.5100
    • 100:$33.8400
    • 25:$35.2900
    • 1:$38.0100
    MRF6S20010GNR1Freescale SemiconductorRF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-270BA
    RoHS: Compliant
    1382
    • 1000:$30.8800
    • 500:$32.5100
    • 100:$33.8400
    • 25:$35.2900
    • 1:$38.0100
    MRF6S20010GNR1
    DISTI # 841-MRF6S20010GNR1
    NXP SemiconductorsRF MOSFET Transistors HV6 2GHZ 10W
    RoHS: Compliant
    229
    • 1:$38.7100
    • 5:$36.7500
    • 10:$36.1200
    • 25:$32.7400
    • 100:$31.3600
    • 250:$28.9800
    • 500:$27.9300
    MRF6S20010GNR1
    DISTI # MRF6S20010GNR1
    NXP SemiconductorsRF POWER TRANSISTOR
    RoHS: Compliant
    415
    • 1:$46.9100
    • 10:$42.4000
    • 25:$40.0900
    MRF6S20010GNR1
    DISTI # 2890603
    NXP SemiconductorsRF FET, 68V, 2.2GHZ-1.6GHZ, TO-270G
    RoHS: Compliant
    479
    • 1:$61.2600
    • 10:$57.1600
    • 100:$49.6300
    MRF6S20010GNR1
    DISTI # 2890603
    NXP SemiconductorsRF FET, 68V, 2.2GHZ-1.6GHZ, TO-270G
    RoHS: Compliant
    479
    • 1:£29.2800
    • 5:£27.8000
    • 10:£24.7700
    • 50:£23.3500
    • 100:£21.9200
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    5747846-3

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    Mfr.#: LMC_020_CTP

    OMO.#: OMO-LMC-020-CTP-VISUAL-COMMUNICATIONS-COMPANY

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    5747846-3

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    OMO.#: OMO-5747846-3-TE-CONNECTIVITY

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    可用性
    ストック:
    182
    注文中:
    2165
    数量を入力してください:
    MRF6S20010GNR1の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
    参考価格(USD)
    単価
    小計金額
    1
    $38.71
    $38.71
    5
    $36.75
    $183.75
    10
    $36.12
    $361.20
    25
    $32.74
    $818.50
    100
    $31.36
    $3 136.00
    250
    $28.98
    $7 245.00
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