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| モデル | メーカー | 説明 | ストック | 価格 |
|---|---|---|---|---|
| BUP314D | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 42A I(C), 1200V V(BR)CES, N-Channel, TO-218 RoHS: Not Compliant | Europe - 50 |
| 画像 | モデル | 説明 |
|---|---|---|
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Mfr.#: BUP213 |
IGBT 1200V 32A 200W TO220 |
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Mfr.#: BUP22CF OMO.#: OMO-BUP22CF-1190 |
ブランドニューオリジナル |
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Mfr.#: BUP300 OMO.#: OMO-BUP300-1190 |
ブランドニューオリジナル |
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Mfr.#: BUP311D OMO.#: OMO-BUP311D-1190 |
IGBT Transistors 1200V, 20A |
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Mfr.#: BUP402 OMO.#: OMO-BUP402-1190 |
36 A, 600 V, N-CHANNEL IGBT, TO-220 |
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Mfr.#: BUP410S OMO.#: OMO-BUP410S-1190 |
ブランドニューオリジナル |
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Mfr.#: BUP48 OMO.#: OMO-BUP48-1190 |
ブランドニューオリジナル |
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Mfr.#: BUP602 OMO.#: OMO-BUP602-1190 |
ブランドニューオリジナル |
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Mfr.#: BUP603D OMO.#: OMO-BUP603D-1190 |
42 A, 600 V, N-CHANNEL IGBT, TO-218 |
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Mfr.#: BUP941 OMO.#: OMO-BUP941-1190 |
ブランドニューオリジナル |