H7N1004DL-E

Mfr. #:: H7N1004DL-E
メーカー:: Renesas Electronics Corporation
説明:
ライフサイクル:: メーカー新製品
データシート:: H7N1004DL-E データシート
配達:: DHL FedEx Ups TNT EMS
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ECAD Model:

製品属性
属性値

Tags: H7N1004D, H7N1004, H7N1, H7N

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

H7N1004DL-E 説明

***p One Stop Global: Trans MOSFET N-CH Si 100V 25A 3-Pin(3+Tab) DPAK(L)-(2) Tube

***egrated Device Technology: Nch Single Power Mosfet 100V 25A 35Mohm DPAK(L)-(2)/To-251

***el Nordic: Contact for details

***(Formerly Allied Electronics): NTD6414ANT4G N-channel MOSFET Transistor; 32 A; 100 V; 3-Pin DPAK

***emi: Single N-Channel Power MOSFET 100V, 32A, 37mΩ

***ure Electronics: NTD6414AN Series 100 V 37 mOhm Surface Mount N-Channel Power Mosfet - TO-252-3

***ark: Mosfet Transistor; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:32A; On Resistance Rds(On):0.03Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; No. Of Pins:3Pins Rohs Compliant: Yes

***nell: MOSFET,N CH,W DIODE,100V,32A,DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 32A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.03ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 100W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C

***emi: Power MOSFET 100V, 32A, 37 mohm, Single N-Channel, DPAK. Power MOSFET 100V 32A 37 mohm Single N-Channel DPAK

***et: Trans MOSFET N-CH 100V 32A 3-Pin(2+Tab) DPAK T/R

***ponent Stockers USA: 32 A 100 V 0.037 ohm N-CHANNEL Si POWER MOSFET

***r Electronics: Power Field-Effect Transistor, 32A I(D), 100V, 0.037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***emi: Single N-Channel Power MOSFET 100V, 32A, 37mΩ

***p One Stop: Trans MOSFET N-CH 100V 32A 3-Pin(3+Tab) IPAK Rail

***ponent Stockers USA: 32 A 100 V 0.037 ohm N-CHANNEL Si POWER MOSFET

***r Electronics: Power Field-Effect Transistor, 32A I(D), 100V, 0.037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***p One Stop Global: Trans MOSFET N-CH 100V 25A Automotive 3-Pin(2+Tab) DPAK T/R

***ure Electronics: Single N-Channel 100 V 100 W 55 nC Silicon Surface Mount Mosfet - TO-252-3

***ark: MOSFET, N-CH, 100V, 25A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:25A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

***icroelectronics: N-Channel 100V - 0.033 Ohm - 25A - DPAK LOW GATE CHARGE StripFET(TM) POWER MOSFET

*** Source Electronics: MOSFET N-CH 100V 25A DPAK / Trans MOSFET N-CH 100V 25A 3-Pin(2+Tab) DPAK T/R

***va Crawler: N-channel 100 V, 0.033 Ohm typ., 25 A StripFET Power MOSFET in DPAK package

***ure Electronics: N-Channel 100 V 0.038 Ohm Surface Mount STripFET II Power MosFet - TO-252-3

***ark: MOSFET, N CHANNEL, 100V, 25A, DPAK; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:12.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

***r Electronics: Power Field-Effect Transistor, 25A I(D), 100V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***nell: MOSFET, N CH, 100V, 25A, DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 12.5A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.033ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 100W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 25A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 100V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V

***ure Electronics: N-Channel 100 V 0.035 Ohm Surface Mount STripFET II Power MosFet - TO-252-3

***r Electronics: Power Field-Effect Transistor, 25A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***nell: MOSFET, N; Transistor Type:MOSFET; Transistor Polarity:N; Typ Voltage Vds:100V; Cont Current Id:25A; On State Resistance:0.03ohm; Voltage Vgs Rds on Measurement:10V; Case Style:DPAK; Termination Type:SMD; On State Resistance @ Vgs = 4.5V:0.04ohm; On State resistance @ Vgs = 10V:0.035ohm; Rds Measurement Voltage:10V; Transistor Case Style:D-PAK

Market price

モデル	メーカー	説明	ストック	価格
H7N1004DSTR-E	Renesas Electronics Corporation		2585

画像	モデル	説明
	Mfr.#: H7N1002LM OMO.#: OMO-H7N1002LM-1190	ブランドニューオリジナル
	Mfr.#: H7N1002LSTL-E OMO.#: OMO-H7N1002LSTL-E-RENESAS-ELECTRONICS-AMERICA	MOSFET N-CH 100V LDPAK
	Mfr.#: H7N1004DS OMO.#: OMO-H7N1004DS-1190	ブランドニューオリジナル
	Mfr.#: H7N1004DSTL-E OMO.#: OMO-H7N1004DSTL-E-1190	ブランドニューオリジナル
	Mfr.#: H7N1004FM OMO.#: OMO-H7N1004FM-1190	ブランドニューオリジナル
	Mfr.#: H7N1004FN OMO.#: OMO-H7N1004FN-1190	ブランドニューオリジナル
	Mfr.#: H7N1004FN-E OMO.#: OMO-H7N1004FN-E-1190	Power Field-Effect Transisto
	Mfr.#: H7N1005DS OMO.#: OMO-H7N1005DS-1190	ブランドニューオリジナル
	Mfr.#: H7N1005LD OMO.#: OMO-H7N1005LD-1190	ブランドニューオリジナル
	Mfr.#: H7N1005LS OMO.#: OMO-H7N1005LS-1190	ブランドニューオリジナル

H7N1004DL-E

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes