2SK3449

Mfr. #:: 2SK3449
メーカー:: Rochester Electronics, LLC
説明:: - Bulk (Alt: 2SK3449)
ライフサイクル:: メーカー新製品
データシート:: 2SK3449 データシート
配達:: DHL FedEx Ups TNT EMS
支払い:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

製品属性
属性値

Tags: 2SK344, 2SK34, 2SK3, 2SK

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

2SK3449 説明

***nell: MOSFET,N CH,60V,4.8A,TO-126

***emi: P-Channel Power MOSFET, QFET®, -60 V, -5.4 A, 450 mΩ, DPAK

*** Stop Electro: Power Field-Effect Transistor, 5.4A I(D), 60V, 0.451ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***nell: MOSFET, P-CH, -60V, -5.4A, TO-252-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -5.4A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.36ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -4

***rchild Semiconductor: This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

***et Japan: Transistor MOSFET Array Dual N-CH 60V 6.6A 8-Pin SOIC T/R

***ure Electronics: Dual N-Channel 60 V 40 mO Surface Mount Enhancement Mode Mosfet - SOIC-8

***nell: MOSFET, DUAL N-CH, 60V, SOIC-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 5A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.03ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 1.3W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***ure Electronics: N-Channel 60 V 68 mOhm Surface Mount Enhancement Mode Mosfet - SOT-223-3

***essParts.Net: DIODES INC DMN6068SE-13 / MOSFET N-CH 60V 4.1A SOT223 DC1143 ROHS

***et: Trans MOSFET N-CH 60V 5.6A 4-Pin(3+Tab) SOT-223 T/R

***nell: MOSFET, N-CH, 60V, 4.1A, SOT223; Transistor Polarity: N Channel; Continuous Drain Current Id: 4.1A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.068ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 2W; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***el Electronic: Transistors - FETs, MOSFETs - Single 1 (Unlimited) TO-261-4, TO-261AA Surface Mount MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 68m Ω @ 12A, 10V 4.1A Ta -55°C~150°C TJ MOSFET N-CH 60V 4.1A SOT223

***ure Electronics: SQ2362ES Series 60 V 0.068 Ohm 4.3 A SMT Automotive N-Channel Mosfet - SOT-23

***ow.cn: Trans MOSFET N-CH 60V 4.3A Automotive 3-Pin SOT-23 T/R

***enic: 60V 4.3A 95m´Î@10V4.5A 3W 2.5V@250Ã×A N Channel SOT-23(SOT-23-3) MOSFETs ROHS

***ment14 APAC: MOSFET, AUTO, N-CH, 60V, 2.3A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:2.3A; Source Voltage Vds:60V; On Resistance

***nsix Microsemi: Power Field-Effect Transistor, 4.3A I(D), 60V, 0.068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

***ark: MOSFET, AEC-Q101, N-CH, 60V, 2.3A, SOT-23; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:4.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes

***nell: MOSFET, AUTO, N-CH, 60V, 2.3A, SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.3A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.125ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 3.3W; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: TrenchFET Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 3 - 168 hours; SVHC: No SVHC (17-Dec-2015)

***ure Electronics: N-Channel 60 V 44 mOhm Surface Mount Enhancement Mode Mosfet - TSOT26-6

***ical: Trans MOSFET N-CH 60V 5A Automotive 6-Pin TSOT-26 T/R

***roFlash: Small Signal Field-Effect Transistor, 4.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***des Inc SCT: N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS

***el Electronic: Transistors - FETs, MOSFETs - Single 1 (Unlimited) SOT-23-6 Thin, TSOT-23-6 Surface Mount MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 44m Ω @ 4.3A, 10V 5A Ta -55°C~150°C TJ MOSFET N CH 60V 5A TSOT26

*** Electronic Components: MOSFET 60V P-Channel QFET

***i-Key: MOSFET P-CH 60V 5.4A IPAK

Market price

モデル	メーカー	説明	ストック	価格
2SK3449 DISTI # 2SK3449	ON Semiconductor	- Bulk (Alt: 2SK3449) Min Qty: 1042 Container: Bulk	Americas - 0	10420:$0.2959 5210:$0.3029 3126:$0.3069 2084:$0.3109 1042:$0.3129
2SK3449	ON Semiconductor	Small Signal Field-Effect Transistor, 4.8A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant	51912	1000:$0.3200 500:$0.3300 100:$0.3500 25:$0.3600 1:$0.3900

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2SK3449

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes