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| モデル | メーカー | 説明 | ストック | 価格 |
|---|---|---|---|---|
| BSM25GD120DN2BOSA1 DISTI # V99:2348_18205100 | Infineon Technologies AG | 35 A, 1200 V, N-CHANNEL IGBT RoHS: Compliant | 10 |
|
| BSM25GD120DN2BOSA1 DISTI # V36:1790_18205100 | Infineon Technologies AG | 35 A, 1200 V, N-CHANNEL IGBT RoHS: Compliant | 0 |
|
| BSM25GD120DN2BOSA1 DISTI # BSM25GD120DN2BOSA1-ND | Infineon Technologies AG | IGBT 2 LOW POWER ECONO2-2 Min Qty: 10 Container: Tray | Limited Supply - Call |
|
| BSM25GD120DN2E3224BOSA1 DISTI # BSM25GD120DN2E3224BOSA1-ND | Infineon Technologies AG | IGBT 2 LOW POWER ECONO2-2 Min Qty: 10 Container: Tray | Limited Supply - Call |
|
| BSM25GD120DN2BOSA1 DISTI # 33135863 | Infineon Technologies AG | 35 A, 1200 V, N-CHANNEL IGBT RoHS: Compliant | 10 |
|
| BSM25GD120DN2BOSA1 DISTI # BSM25GD120DN2BOSA1 | Infineon Technologies AG | Trans IGBT Module N-CH 1.2kV 25A nom 200W 17-Pin EconoPACK 2A 107.5x45mm - Trays (Alt: BSM25GD120DN2BOSA1) RoHS: Compliant Min Qty: 10 Container: Tray | Americas - 0 |
|
| BSM25GD120DN2E3224 DISTI # SP000100361 | Infineon Technologies AG | Trans IGBT Module N-CH 1.2kV 25A nom 200W 17-Pin EconoPACK 2A 107.5x45mm T/R (Alt: SP000100361) Min Qty: 1 Container: Tape and Reel | Europe - 0 |
|
| BSM25GD120DN2E3224BOSA1 DISTI # BSM25GD120DN2E3224BOSA1 | Infineon Technologies AG | Trans IGBT Module N-CH 1.2kV 25A nom 200W 17-Pin EconoPACK 2A 107.5x45mm T/R - Trays (Alt: BSM25GD120DN2E3224BOSA1) RoHS: Compliant Min Qty: 10 Container: Tray | Americas - 0 |
|
| BSM25GD120DN2 DISTI # 95M4164 | Infineon Technologies AG | IGBT MOD, N-CH, 1.2KV, 35A, ECONOPACK 2,Transistor Polarity:N Channel,DC Collector Current:35A,Collector Emitter Saturation Voltage Vce(on):2.5V,Power Dissipation Pd:200W,Collector Emitter Voltage V(br)ceo:1.2kV,Product Range:-RoHS Compliant: Yes RoHS: Compliant | 0 |
|
| BSM25GD120DN2E3224 DISTI # IGBT1939 | Infineon Technologies AG | Sixpack1200V 35A Econo 2 RoHS: Compliant | Stock DE - 0Stock HK - 0Stock US - 0 |
|
| BSM25GD120DN2 DISTI # 1496948 | Infineon Technologies AG | IGBT MODULE, 1200V, ECONOPACK3 RoHS: Compliant | 2 |
|
| BSM25GD120DN2 DISTI # 1496948 | Infineon Technologies AG | IGBT MODULE, 1200V, ECONOPACK3 RoHS: Compliant | 0 |
|
| 画像 | モデル | 説明 |
|---|---|---|
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Mfr.#: BSM250D17P2E004 OMO.#: OMO-BSM250D17P2E004 |
Discrete Semiconductor Modules 1700V Vdss; 250A Id SiC Pwr Module |
|
Mfr.#: BSM25GD120DLC3224 OMO.#: OMO-BSM25GD120DLC3224-1190 |
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel |
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Mfr.#: BSM252F OMO.#: OMO-BSM252F-1190 |
Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET |
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Mfr.#: BSM25GD120D2 OMO.#: OMO-BSM25GD120D2-1190 |
ブランドニューオリジナル |
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Mfr.#: BSM25GD120DLCE3224 OMO.#: OMO-BSM25GD120DLCE3224-1190 |
Trans IGBT Module N-CH 1.2kV 25A nom 200W 17-Pin EconoPACK 2A 107.5x45mm T/R (Alt: SP000100397) |
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Mfr.#: BSM25GD120DN12 OMO.#: OMO-BSM25GD120DN12-1190 |
ブランドニューオリジナル |
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Mfr.#: BSM25GD120DN2E OMO.#: OMO-BSM25GD120DN2E-1190 |
ブランドニューオリジナル |
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Mfr.#: BSM25GD120DN2_E3224 OMO.#: OMO-BSM25GD120DN2-E3224-1190 |
ブランドニューオリジナル |
|
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Mfr.#: BSM25GD120DN2BOSA1 |
35 A, 1200 V, N-CHANNEL IGBT |
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Mfr.#: BSM25GD120DN2E3224BOSA1 |
IGBT 2 LOW POWER ECONO2-2 |