BSC026N02KS

Mfr. #:: BSC026N02KS
メーカー:: Infineon Technologies
説明:
ライフサイクル:: メーカー新製品
データシート:: BSC026N02KS データシート
配達:: DHL FedEx Ups TNT EMS
支払い:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

製品属性
属性値

メーカー: インフィニオンテクノロジーズ

製品カテゴリ: FET-シングル

シリーズ: OptiMOS

包装: Digi-ReelR代替パッケージ

パーツエイリアス: BSC026N02KSGAUMA1 BSC026N02KSGXT SP000379664

取り付けスタイル: SMD / SMT

商標名: OptiMOS

パッケージ-ケース: 8-PowerTDFN

テクノロジー: Si

作動温度: -55°C ~ 150°C (TJ)

取付タイプ: 表面実装

チャネル数: 1 Channel

サプライヤー-デバイス-パッケージ: PG-TDSON-8

構成: シングルクワッドドレイントリプルソース

FETタイプ: MOSFET Nチャネル、金属酸化物

パワーマックス: 78W

トランジスタタイプ: 1 N-Channel

Drain-to-Source-Voltage-Vdss: 20V

入力-静電容量-Ciss-Vds: 7800pF @ 10V

FET機能: Logic Level Gate, 2.5V Drive

Current-Continuous-Drain-Id-25°C: 25A (Ta), 100A (Tc)

Rds-On-Max-Id-Vgs: 2.6 mOhm @ 50A, 4.5V

Vgs-th-Max-Id: 1.2V @ 200μA

ゲートチャージ-Qg-Vgs: 52.7nC @ 4.5V

Pd-電力損失: 2.8 W

最高作動温度: + 150 C

最低作動温度: - 55 C

立ち下がり時間: 9 ns

立ち上がり時間: 115 ns

Vgs-Gate-Source-Voltage: 12 V

Id-連続-ドレイン-電流: 25 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 20 V

Rds-On-Drain-Source-Resistance: 2.6 mOhms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 52 ns

典型的なターンオン遅延時間: 21 ns

チャネルモード: 強化

Tags: BSC026N02, BSC026N0, BSC026, BSC02, BSC0, BSC

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

Market price

モデル	メーカー	説明	ストック	価格
BSC026N02KSGAUMA1 DISTI # V72:2272_06384322	Infineon Technologies AG	Trans MOSFET N-CH 20V 25A 8-Pin TDSON EP T/R RoHS: Compliant	4849	3000:$0.6278 1000:$0.6342 500:$0.7785 250:$0.8718 100:$0.8814 25:$1.0937 10:$1.1069 1:$1.2548
BSC026N02KSGAUMA1 DISTI # BSC026N02KSGAUMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 20V 100A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	8909In Stock	1000:$0.8016 500:$1.0154 100:$1.3094 10:$1.6570 1:$1.8700
BSC026N02KSGAUMA1 DISTI # BSC026N02KSGAUMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 20V 100A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	8909In Stock	1000:$0.8016 500:$1.0154 100:$1.3094 10:$1.6570 1:$1.8700
BSC026N02KSGAUMA1 DISTI # BSC026N02KSGAUMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 20V 100A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	On Order	5000:$0.6901
BSC026N02KSGAUMA1 DISTI # 30701482	Infineon Technologies AG	Trans MOSFET N-CH 20V 25A 8-Pin TDSON EP T/R RoHS: Compliant	5000	10000:$0.5798 5000:$0.6029
BSC026N02KSGAUMA1 DISTI # 26195427	Infineon Technologies AG	Trans MOSFET N-CH 20V 25A 8-Pin TDSON EP T/R RoHS: Compliant	4849	3000:$0.6278 1000:$0.6342 500:$0.7785 250:$0.8718 100:$0.8814 25:$1.0937 11:$1.1069
BSC026N02KSGAUMA1 DISTI # BSC026N02KSGAUMA1	Infineon Technologies AG	Trans MOSFET N-CH 20V 25A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC026N02KSGAUMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	5000:$0.6789 10000:$0.6549 20000:$0.6309 30000:$0.6099 50000:$0.5989
BSC026N02KSGAUMA1 DISTI # 726-BSC026N02KSGAUMA	Infineon Technologies AG	MOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2 RoHS: Compliant	2883	1:$1.5500 10:$1.3300 100:$1.0200 500:$0.8970 1000:$0.7080
BSC026N02KS G DISTI # 726-BSC026N02KSG	Infineon Technologies AG	MOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2 RoHS: Compliant	7566	1:$1.3700 10:$1.1700 100:$0.8920 500:$0.7880
BSC026N02KSG	Infineon Technologies AG	Power Field-Effect Transistor, 25A I(D), 20V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	40500	1000:$0.5700 500:$0.6000 100:$0.6200 25:$0.6500 1:$0.7000
BSC026N02KSGAUMA1 DISTI # 7528154P	Infineon Technologies AG	MOSFET N-CHANNEL 20V 25A OPTIMOS2 TDSON8, RL	3490	50:£0.8500 250:£0.6650 1250:£0.4650 2500:£0.4400
BSC026N02KSGAUMA1 DISTI # 1775434	Infineon Technologies AG	MOSFET, N CH, 100A, 20V, PG-TDSON-8 RoHS: Compliant	0	1:$2.1700 10:$1.8500 100:$1.4100 500:$1.2500 1000:$0.9840 5000:$0.9840
BSC026N02KSGAUMA1 DISTI # C1S322000653078	Infineon Technologies AG	MOSFETs RoHS: Compliant	4849	250:$0.9013 100:$0.9038 25:$1.1116 10:$1.1161
BSC026N02KSGAUMA1 DISTI # C1S322000644539	Infineon Technologies AG	MOSFETs RoHS: Compliant	5000	5000:$0.6420

関連製品

画像	モデル	説明
	Mfr.#: BSC024NE2LS OMO.#: OMO-BSC024NE2LS	MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
	Mfr.#: BSC020N025S G OMO.#: OMO-BSC020N025S-G-INFINEON-TECHNOLOGIES	MOSFET N-CH 25V 100A TDSON-8
	Mfr.#: BSC020N03LSG,1N4148W T/R OMO.#: OMO-BSC020N03LSG-1N4148W-T-R-1190	ブランドニューオリジナル
	Mfr.#: BSC022N03LSG OMO.#: OMO-BSC022N03LSG-1190	ブランドニューオリジナル
	Mfr.#: BSC022N03S 30V,50A,FD100 OMO.#: OMO-BSC022N03S-30V-50A-FD100-1190	ブランドニューオリジナル
	Mfr.#: BSC022N03S,MOSFET,30V,50 OMO.#: OMO-BSC022N03S-MOSFET-30V-50-1190	ブランドニューオリジナル
	Mfr.#: BSC025N03MS G OMO.#: OMO-BSC025N03MS-G-1190	Trans MOSFET N-CH 30V 100A 8-Pin TDSON EP
	Mfr.#: BSC026N08NS5 OMO.#: OMO-BSC026N08NS5-1190	POWER FIELD-EFFECT TRANSISTOR, 23A I(D), 80V, 0.0026OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
	Mfr.#: BSC028N06LS3G OMO.#: OMO-BSC028N06LS3G-1190	23 A, 60 V, 0.0028 ohm, N-CHANNEL, Si, POWER, MOSFET
	Mfr.#: BSC028N06LS3GATMA1 OMO.#: OMO-BSC028N06LS3GATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 60V 100A TDSON-8

可用性

ストック:: Available
注文中:: 5000
数量を入力してください:

BSC026N02KSの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。

参考価格（USD）

量
単価
小計金額

1: ~~$0.00~~; ~~$0.00~~

10: ~~$0.00~~; ~~$0.00~~

100: ~~$0.00~~; ~~$0.00~~

500: ~~$0.00~~; ~~$0.00~~

1000: ~~$0.00~~; ~~$0.00~~

皮切りに

BSC026N02 4
BSC026N0 8
BSC026 11
BSC02 87
BSC0 601
BSC 999

BSC026N02KS

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes