ZXMN3A06DN8TA

Mfr. #:: ZXMN3A06DN8TA
メーカー:: Diodes Incorporated
説明:: Darlington Transistors MOSFET Dl 30V N-Chnl UMOS
ライフサイクル:: メーカー新製品
データシート:: ZXMN3A06DN8TA データシート
配達:: DHL FedEx Ups TNT EMS
支払い:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:: ZXMN3A06DN8TA 詳しくは

製品属性
属性値

メーカー: 組み込まれたダイオード

製品カテゴリ: FET-アレイ

シリーズ: ZXMN3

包装: カットテープ（CT）代替包装

単位重量: 0.002610 oz

取り付けスタイル: SMD / SMT

パッケージ-ケース: 8-SOIC (0.154", 3.90mm Width)

テクノロジー: Si

作動温度: -55°C ~ 150°C (TJ)

取付タイプ: 表面実装

チャネル数: 2 Channel

サプライヤー-デバイス-パッケージ: 8-SO

構成: デュアルデュアルドレイン

FETタイプ: 2 N-Channel (Dual)

パワーマックス: 1.8W

トランジスタタイプ: 2 N-Channel

Drain-to-Source-Voltage-Vdss: 30V

入力-静電容量-Ciss-Vds: 796pF @ 25V

FET機能: ロジックレベルゲート

Current-Continuous-Drain-Id-25°C: 4.9A

Rds-On-Max-Id-Vgs: 35 mOhm @ 9A, 10V

Vgs-th-Max-Id: 1V @ 250μA (Min)

ゲートチャージ-Qg-Vgs: 17.5nC @ 10V

Pd-電力損失: 2.1 W

最高作動温度: + 150 C

最低作動温度: - 55 C

立ち下がり時間: 9.4 ns

立ち上がり時間: 6.4 ns

Vgs-Gate-Source-Voltage: 20 V

Id-連続-ドレイン-電流: 6.2 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 30 V

Rds-On-Drain-Source-Resistance: 35 mOhms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 21.6 ns

典型的なターンオン遅延時間: 3 ns

チャネルモード: 強化

Tags: ZXMN3A06DN8T, ZXMN3A06DN, ZXMN3A06D, ZXMN3A06, ZXMN3A0, ZXMN3A, ZXMN3, ZXMN, ZXM

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

ZXMN3A06DN8TA 詳しくは

Power MOSFETs: Diodes Inc. continues to expand its portfolio of power MOSFETs with new N- and P-channel devices with breakdown voltages up to 450V and a wide range of package options. The Diodes Inc. MOSFET portfolio is ideally suited to a range of applications, including DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive.

Market price

モデル	メーカー	説明	ストック	価格
ZXMN3A06DN8TA DISTI # V72:2272_06708088	Zetex / Diodes Inc	Trans MOSFET N-CH 30V 6.2A Automotive 8-Pin SOIC T/R RoHS: Compliant	500	500:$0.6091 250:$0.6655 100:$0.6725 25:$0.8727 10:$0.8819 1:$1.0408
ZXMN3A06DN8TA DISTI # ZXMN3A06DN8CT-ND	Diodes Incorporated	MOSFET 2N-CH 30V 4.9A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1385In Stock	100:$0.9160 10:$1.1590 1:$1.3100
ZXMN3A06DN8TA DISTI # ZXMN3A06DN8TR-ND	Diodes Incorporated	MOSFET 2N-CH 30V 4.9A 8-SOIC RoHS: Compliant Min Qty: 500 Container: Tape & Reel (TR)	1000In Stock	500:$0.6897
ZXMN3A06DN8TA DISTI # 27023504	Zetex / Diodes Inc	Trans MOSFET N-CH 30V 6.2A Automotive 8-Pin SOIC T/R RoHS: Compliant	6000	500:$0.4125
ZXMN3A06DN8TA DISTI # 31339432	Zetex / Diodes Inc	Trans MOSFET N-CH 30V 6.2A Automotive 8-Pin SOIC T/R RoHS: Compliant	500	16:$1.0408
ZXMN3A06DN8TA DISTI # ZXMN3A06DN8TA	Diodes Incorporated	Trans MOSFET N-CH 30V 6.2A 8-Pin SOIC T/R - Tape and Reel (Alt: ZXMN3A06DN8TA) RoHS: Not Compliant Min Qty: 500 Container: Reel	Americas - 1000	500:$0.4969 1000:$0.4729 2000:$0.4509 3000:$0.4299 5000:$0.4209
ZXMN3A06DN8TA DISTI # ZXMN3A06DN8TA	Diodes Incorporated	Trans MOSFET N-CH 30V 6.2A 8-Pin SOIC T/R (Alt: ZXMN3A06DN8TA) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Asia - 0	1000:$0.5778 2000:$0.5523 3000:$0.5289 5000:$0.5144 10000:$0.5075 25000:$0.4941 50000:$0.4815
ZXMN3A06DN8TA DISTI # 70438829	Diodes Incorporated	MOSFET Dual N-Channel 30V 6.2A SOIC8 RoHS: Compliant	0	25:$0.8400 50:$0.8100 100:$0.7300 250:$0.6500
ZXMN3A06DN8TA DISTI # 522-ZXMN3A06DN8TA	Diodes Incorporated	MOSFET Dl 30V N-Chnl UMOS RoHS: Compliant	269	1:$1.0900 10:$0.9240 100:$0.7100 500:$0.6280
ZXMN3A06DN8TA	Diodes Incorporated	4900 MA, 30 V, 2 CHANNEL, N-CHANNEL, SI, SMALL SIGNAL, MOSFET, SOIC-8	372	79:$0.4480 17:$0.6400 1:$1.2800
ZXMN3A06DN8TA DISTI # 7082444P	Zetex / Diodes Inc	MOSFET DUAL N-CHANNEL 30V 6.2A SOIC8, RL	770	50:£0.6680 100:£0.5380 250:£0.5080 500:£0.4960
ZXMN3A06DN8TA	Zetex / Diodes Inc		1017
ZXMN3A06DN8TA DISTI # C1S205700136699	Diodes Incorporated	Trans MOSFET N-CH 30V 6.2A Automotive 8-Pin SOIC T/R RoHS: Compliant	500	501:$0.5005

画像	モデル	説明
	Mfr.#: ZXMN3A14FQTA OMO.#: OMO-ZXMN3A14FQTA	MOSFET MOSFET BVDSS 25V-30V
	Mfr.#: ZXMN3A03E6TA OMO.#: OMO-ZXMN3A03E6TA	MOSFET 30V N Chnl UMOS
	Mfr.#: ZXMN3A01E6TC OMO.#: OMO-ZXMN3A01E6TC	MOSFET 30V N Chnl UMOS
	Mfr.#: ZXMN3A02N8TA OMO.#: OMO-ZXMN3A02N8TA	MOSFET 30V N Chnl UMOS
	Mfr.#: ZXMN3A03E6TC OMO.#: OMO-ZXMN3A03E6TC	MOSFET 30V N Chnl UMOS
	Mfr.#: ZXMN3A01FTA/7N3 OMO.#: OMO-ZXMN3A01FTA-7N3-1190	ブランドニューオリジナル
	Mfr.#: ZXMN3A01FTAPBF OMO.#: OMO-ZXMN3A01FTAPBF-1190	ブランドニューオリジナル
	Mfr.#: ZXMN3AM832 OMO.#: OMO-ZXMN3AM832-1190	ブランドニューオリジナル
	Mfr.#: ZXMN3A04DN8TA-CUT TAPE OMO.#: OMO-ZXMN3A04DN8TA-CUT-TAPE-1190	ブランドニューオリジナル
	Mfr.#: ZXMN3A14FQTA OMO.#: OMO-ZXMN3A14FQTA-DIODES	30V N-CHANNEL ENHANCEMENT MODE MOSFET

ZXMN3A06DN8TA

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes