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MRF6S21190HSR3

MRF6S21190HSR3
Mfr. #:
MRF6S21190HSR3
メーカー:
NXP / Freescale
説明:
RF MOSFET Transistors HV6 2.1GHZ 54W NI880S
ライフサイクル:
メーカー新製品
データシート:
MRF6S21190HSR3 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
MRF6S21190HSR3 DatasheetMRF6S21190HSR3 Datasheet (P4-P6)MRF6S21190HSR3 Datasheet (P7-P9)MRF6S21190HSR3 Datasheet (P10-P11)
ECAD Model:
製品属性
属性値
メーカー：
NXP
製品カテゴリ：
RFMOSFETトランジスタ
JBoss：
Y
トランジスタの極性：
Nチャネル
テクノロジー：
Si
Vds-ドレイン-ソース間降伏電圧：
68 V
最低動作温度：
- 65 C
最高作動温度：
+ 150 C
取り付けスタイル：
SMD / SMT
パッケージ/ケース：
NI-880S
包装：
リール
構成：
独身
高さ：
5.08 mm
長さ：
23.24 mm
シリーズ：
MRF6S21190H
タイプ：
RFパワーMOSFET
幅：
13.8 mm
ブランド：
NXP /フリースケール
チャネルモード：
強化
製品タイプ：
RFMOSFETトランジスタ
ファクトリーパックの数量：
250
サブカテゴリ：
MOSFET
Vgs-ゲート-ソース間電圧：
- 0.5 V, 12 V
単位重量：
0.238367 oz
Tags
MRF6S21190HS, MRF6S2119, MRF6S211, MRF6S21, MRF6S2, MRF6S, MRF6, MRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***el Electronic
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Trans RF MOSFET N-CH 68V 3-Pin NI-880S T/R
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HV6 2.1GHZ 54W NI880S, CFM2F, RoHS
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***ure Electronics
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***p One Stop Global
Trans RF MOSFET N-CH 68V 3-Pin TO-270 GULL T/R
***i-Key
MOSFET RF N-CH 28V 10W TO2702 GW
***or
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***ment14 APAC
RF FET, 68V, 2.2GHZ-1.6GHZ, TO-270G
***i-Key Marketplace
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***nell
RF FET, 68V, 2.2GHZ-1.6GHZ, TO-270G; Drain Source Voltage Vds: 68V; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 2.2GHz; Operating Frequency Max: 1.6GHz; RF Transistor Case: TO-270G; No. of
***W
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***ark
RF POWER MOSFET, LATERAL N-CH BROADBAND, 68V, TO-270-2 GULL; Transistor Type:RF FET; Drain Source Voltage Vds:68V; Power Dissipation Pd:10W; Operating Frequency Range:450MHz to 1500MHz; Operating Temperature Range:-10°C to +150°C ;RoHS Compliant: Yes
***nell
TRANSISTOR, RF, 68V, TO-270-2; Drain Source Voltage Vds: 68VDC; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 450MHz; Operating Frequency Max: 1500MHz; RF Transistor Case: TO-270; No. of Pins: 2Pins; Operating Temperature Max: 225°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)
***W
RF Power Transistor,1 to 2000 MHz, 4 W, Typ Gain in dB is 18 @ 1960 MHz, 28 V, LDMOS, SOT1811
***ment14 APAC
RF MOSFET, N CHANNEL, 68V, 466-03; Transistor Type:RF MOSFET; Drain Source Voltage Vds:68V; Operating Frequency Min:1MHz; Operating Frequency Max:2GHz; RF Transistor Case:PLD-1.5; No. of Pins:4; Filter Terminals:Surface Mount
***ark
RF MOSFET, N CHANNEL, 68V, 466-03; Transistor Type:RF FET; Drain Source Voltage, Vds:68V; RF Transistor Case:466; Gain:18dB; Gate-Source Voltage:12V; Leaded Process Compatible:Yes; Operating Frequency Max:1960MHz ;RoHS Compliant: Yes
***nell
TRANSISTOR, RF, 68V, PLD-1.5-4; Drain Source Voltage Vds: 68VDC; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 1MHz; Operating Frequency Max: 2000MHz; RF Transistor Case: PLD-1.5; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)
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***ineon SCT
OptiMOS™ 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TDSON-8, RoHS
***nell
MOSFET, N-CH, 60V, 50A, 8TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.009ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:50W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SuperSOT; No. of Pins:8; MSL:MSL 3 - 168 hours; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C
***ineon
OptiMOS 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applications; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
*** Source Electronics
Trans MOSFET N-CH 50V 0.16A 3-Pin SOT-523 T/R / MOSFET N-CH 50V 160MA SOT-523
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***nell
MOSFET, N-CH, 50V, SOT-523-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 160mA; Drain Source Voltage Vds: 50V; On Resistance Rds(on): 3.1ohm; Rds(on) Test Voltage Vgs: 4; Available until stocks are exhausted
***emi
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***inecomponents.com
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***el Electronic
Surface Mount Ceramic Multilayer Capacitor 0.1uF 10% X7R 50V 0805 Paper T/R
***ment14 APAC
MOSFET, N-CH, 50V, 0.22A, SOT-23-3; Transistor Polarity:N Channel; Continuous Drain Current Id:220mA; Source Voltage Vds:50V; On Resistance
***r Electronics
Small Signal Field-Effect Transistor, 0.22A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
***nell
MOSFET, N-CH, 50V, 0.22A, SOT-23-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 220mA; Drain Source Voltage Vds: 50V; On Resistance Rds(on): 1.6ohm; Rds(on) Test Voltage Vgs: 5V; Threshold Voltage Vgs: 600mV; Power Dissipation Pd: 350mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 220 / Drain-Source Voltage (Vds) V = 50 / ON Resistance (Rds(on)) Ohm = 2.5 / Gate-Source Voltage V = 12 / Fall Time ns = 35 / Rise Time ns = 5 / Turn-OFF Delay Time ns = 60 / Turn-ON Delay Time ns = 5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 350
モデル メーカー 説明 ストック 価格
MRF6S21190HSR3
DISTI # MRF6S21190HSR3-ND		NXP SemiconductorsFET RF 68V 2.17GHZ NI880S
RoHS: Compliant
Min Qty: 250
Container: Tape & Reel (TR)		Limited Supply - Call
    MRF6S21190HSR3
    DISTI # 841-MRF6S21190HSR3    		NXP SemiconductorsRF MOSFET Transistors HV6 2.1GHZ 54W NI880S
    RoHS: Compliant    		0
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      MRF6S21140HR5

      Mfr.#: MRF6S21140HR5

      OMO.#: OMO-MRF6S21140HR5-NXP-SEMICONDUCTORS

      		 FET RF 68V 2.12GHZ NI-880
      MRF6S21100MBR1

      Mfr.#: MRF6S21100MBR1

      OMO.#: OMO-MRF6S21100MBR1-NXP-SEMICONDUCTORS

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      MRF6S21060BR1

      Mfr.#: MRF6S21060BR1

      OMO.#: OMO-MRF6S21060BR1-1190

      		 ブランドニューオリジナル
      MRF6S21140HR3

      Mfr.#: MRF6S21140HR3

      OMO.#: OMO-MRF6S21140HR3-NXP-SEMICONDUCTORS

      		 FET RF 68V 2.12GHZ NI-880
      可用性
      ストック:
      Available
      注文中:
      5000
      数量を入力してください:
      MRF6S21190HSR3の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
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