2SK3799

Mfr. #:: 2SK3799
メーカー:: Toshiba America Electronic Components
説明:: MOSFET, N, 900V, TO-220SIS, Transistor Polarity:N Channel, Continuous Drain Current Id:8A, Drain Source Voltage Vds:900V, On Resistance Rds(on):1.3ohm, Rds(on) Test Voltage Vgs:10V, Threshold Vo
ライフサイクル:: メーカー新製品
データシート:: 2SK3799 データシート
配達:: DHL FedEx Ups TNT EMS
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ECAD Model:

製品属性
属性値

Tags: 2SK3799, 2SK379, 2SK37, 2SK3, 2SK

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We guarantee 100% customer satisfaction.

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

2SK3799 説明

***ical: Trans MOSFET N-CH Si 900V 8A 3-Pin(3+Tab) TO-220NIS

***nell: MOSFET, N, 900V, TO-220SIS; Transistor Polarity: N Channel; Continuous Drain Current Id: 8A; Drain Source Voltage Vds: 900V; On Resistance Rds(on): 1.3ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 50W; Transistor Case Style: TO-220SIS; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Current Id Max: 8A; Termination Type: Through Hole; Voltage Vds Typ: 900V; Voltage Vgs Max: 30V; Voltage Vgs Rds on Measurement: 10V

***el Electronic: TRANSISTOR 8 A, 900 V, 1.3 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-10U1B, SC-67, 3 PIN, FET General Purpose Power

***ark: MOSFET Transistor, N Channel, 9 A, 900 V, 1.12 ohm, 10 V, 5 V

***emi: N-Channel QFET® MOSFET 900V, 9.0A, 1.4Ω

*** Source Electronics: MOSFET N-CH 900V 9A TO-3P / Trans MOSFET N-CH 900V 9A 3-Pin(3+Tab) TO-3P Tube

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

***emi: Power MOSFET, N-Channel, QFET®, 900 V, 6 A, 2.3 Ω, TO-220F

***ure Electronics: N-Channel 900 V 2.3 Ohm Through Hole Mosfet - TO-220F

***ical: Trans MOSFET N-CH 900V 6A 3-Pin(3+Tab) TO-220FP Rail

***enic: 900V 6A 56W 2.3´Î@10V3A 5V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS

***ment14 APAC: MOSFET, N CH, 900V, 6A, TO-220F-3; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Source Voltage Vds:900V; On Resistance

***trelec: MOSFET Operating temperature: -55...150 °C Housing type: TO-220 Polarity: N Variants: Enhancement mode Power dissipation: 56 W

*** Stop Electro: Power Field-Effect Transistor, 6A I(D), 900V, 2.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

***nell: MOSFET, N, 900V; Transistor Polarity: N Channel; Continuous Drain Current Id: 6A; Drain Source Voltage Vds: 900V; On Resistance Rds(on): 2.3ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissipation Pd: 56W; Transistor Case Style: TO-220F; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Operating Temperature Min: -55°C; Termination Type: Through Hole; Transistor Type: Enhancement; Voltage Vds Typ: 900V; Voltage Vgs Rds on Measurement: 10V

***ure Electronics: Single N-Channel 650 V 0.93 Ohms Flange Mount Power Mosfet - TO-220-3

***ical: Trans MOSFET N-CH 650V 8.5A 3-Pin(3+Tab) TO-220AB

***trelec: MOSFET Operating temperature: -55...150 °C Housing type: TO-220 Polarity: N Power dissipation: 167 W

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 8.5A I(D), 650V, 0.93ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***nell: MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 8.5A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.93ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 167W; Transistor Case Style: TO-220AB; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; Current Id Max: 8.5A; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 21A; Voltage Vds Typ: 650V; Voltage Vgs Max: 30V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 4V

***icroelectronics: N-Channel 800V - 0.8 Ohm - 9A - TO-220FP Zener-Protected SuperMESH(TM) POWER MOSFET

*** Source Electronics: Trans MOSFET N-CH 800V 9A 3-Pin(3+Tab) TO-220FP Tube / MOSFET N-CH 800V 9A TO-220FP

***r Electronics: Power Field-Effect Transistor, 9A I(D), 800V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:800V; On Resistance Rds(on):900mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:40W; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Cont Current Id @ 100°C:6A; Current Id Max:9A; On State resistance @ Vgs = 10V:900mohm; Package / Case:TO-220FP; Power Dissipation Pd:40W; Power Dissipation Pd:40W; Pulse Current Idm:36A; Termination Type:Through Hole; Voltage Vds Typ:800V; Voltage Vgs Max:3.75V; Voltage Vgs Rds on Measurement:10V

***icroelectronics: N-channel 650 V, 0.39 Ohm typ., 8.5 A MDmesh M5 Power MOSFET in TO-220FP package

***ark: Power Mosfet, N Channel, 8.5 A, 650 V, 0.39 Ohm, 10 V, 4 V Rohs Compliant: Yes

***ical: Trans MOSFET N-CH Si 650V 8.5A 3-Pin(3+Tab) TO-220FP Tube

***nell: MOSFET, N CH, 650V, 8.5A, TO 220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 8.5A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.39ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; P

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 8.5A I(D), 650V, 0.43ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***icroelectronics: N-CHANNEL 700 V - 0.75 OHM - 8.6 A TO-220FP ZENER-PROTECTED SuperMESH POWER MOSFET

*** Source Electronics: Trans MOSFET N-CH 700V 8.6A 3-Pin(3+Tab) TO-220FP Tube / MOSFET N-CH 700V 8.6A TO-220FP

***el Electronic: STMICROELECTRONICS STP10NK70ZFP Power MOSFET, N Channel, 4.5 A, 700 V, 750 mohm, 10 V, 3.75 V

***enic: 700V 8.6A 35W 850m´Î@10V4.5A 4.5V@100Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS

***ponent Stockers USA: 8.6 A 700 V 0.85 ohm N-CHANNEL Si POWER MOSFET TO-220AB

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 8.6A I(D), 700V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***nell: MOSFET, N CH, 700V, 8.6A, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 4.5A; Drain Source Voltage Vds: 700V; On Resistance Rds(on): 0.75ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V

Market price

モデル	メーカー	説明	ストック	価格
2SK3799 DISTI # 25M1426	Toshiba America Electronic Components	MOSFET, N, 900V, TO-220SIS,Transistor Polarity:N Channel,Continuous Drain Current Id:8A,Drain Source Voltage Vds:900V,On Resistance Rds(on):1.3ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power Dissipation Pd:50W RoHS Compliant: Yes	110	500:$1.8800 250:$1.9500 100:$2.3200 50:$2.6700 25:$2.8500 10:$3.2500 1:$3.7600
2SK3799,S5Q(J	Toshiba America Electronic Components	POWER FIELD-EFFECT TRANSISTOR, 8A I(D), 900V, 1.3OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET	48	32:$2.1560 10:$2.4500 1:$3.9200
2SK3799(Q,M) DISTI # 2SK3799	Toshiba America Electronic Components	Transistor: N-MOSFET,unipolar,900V,8A,50W,TO220FP	33	50:$1.6600 10:$1.8500 3:$2.0800 1:$2.3200
2SK3799 DISTI # 1300784	Toshiba America Electronic Components	MOSFET, N, 900V, TO-220SIS RoHS: Compliant	107	500:£1.8800 250:£2.1400 100:£2.4100 10:£2.6800 1:£3.7600
2SK3799 DISTI # 1300784	Toshiba America Electronic Components	MOSFET, N, 900V, TO-220SIS RoHS: Compliant	107	250:$3.3300 100:$3.5200 25:$3.9700 1:$4.2500

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2SK3799

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes