FFSH20120ADN-F155

FFSH20120ADN-F155
Mfr. #:
FFSH20120ADN-F155
メーカー:
ON Semiconductor / Fairchild
説明:
Schottky Diodes & Rectifiers 1200V SiC SBD 20A
ライフサイクル:
メーカー新製品
データシート:
FFSH20120ADN-F155 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
FFSH20120ADN-F155 詳しくは
製品属性
属性値
メーカー:
オン・セミコンダクター
製品カテゴリ:
ショットキーダイオードと整流器
JBoss:
Y
製品:
ショットキーシリコンカーバイドダイオード
取り付けスタイル:
スルーホール
パッケージ/ケース:
TO-247-3
場合-順電流:
20 A
Vrrm-繰り返し逆電圧:
1.2 kV
Vf-順方向電圧:
1.45 V
Ifsm-順方向サージ電流:
96 A
構成:
一般的なカソード
テクノロジー:
SiC
Ir-逆電流:
200 uA
最低動作温度:
- 55 C
最高作動温度:
+ 175 C
シリーズ:
FFSH20120A
包装:
チューブ
動作温度範囲:
- 55 C to + 175 C
終了スタイル:
スルーホール
タイプ:
炭化ケイ素ショットキーダイオード
ブランド:
オン・セミコンダクター/フェアチャイルド
Pd-消費電力:
150 W
製品タイプ:
ショットキーダイオードと整流器
ファクトリーパックの数量:
450
サブカテゴリ:
ダイオードと整流器
Vr-逆電圧:
1.2 kV
パーツ番号エイリアス:
FFSH20120ADN_F155
単位重量:
0.225401 oz
Tags
FFSH20120ADN-F, FFSH20120AD, FFSH201, FFSH2, FFSH, FFS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
SiC Diode - 1200V, 20A, TO-247-3, Common Cathode
***ure Electronics
Schottky Diodes Rectifiers 1200V
***i-Key Marketplace
RECTIFIER DIODE, SCHOTTKY, 1 PHA
***rchild Semiconductor
SiC Schottky Diode has no switching loss, provides improved system efficiency against Si diodes by utilizing new semiconductor material - Silicon Carbide, enables higher operating frequency, and helps increasing power density and reduction of system size/cost. Its high reliability ensures robust operation during surge or over-voltage conditions
FFSH SiC Schottky Diodes
ON Semiconductor FFSH Silicon Carbide (SiC) Schottky Diodes provide improved system efficiency and have a max junction temperature of 175ºC. These Schottky Diodes have no switching loss and a high surge current capacity. The diodes use Silicon Carbide semiconductor material for higher operating frequency, increasing power density and reduction of system size/cost. This ensures high reliability and robust operation during surge or over-voltage conditions.
1200V SiC Schottky Diodes
ON Semiconductor 1200V Silicon Carbide (SiC) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. These SiC Schottky diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. The system benefits include high-efficiency, fast operating frequency, high-power density, low EMI, and reduced system size and cost.
Wide Bandgap SiC Devices
ON Semiconductor Wide Bandgap Silicon Carbide (SiC) Devices incorporate a completely new technology that provides superior switching performance and higher reliability compared to silicon. The system benefits include the highest efficiency, faster-operating frequency, increased power density, reduced EMI, and reduced system size and cost. ON Semiconductor’s SiC portfolio includes 650V and 1200V diodes, 650V and 1200V IGBT and SiC diode Power Integrated Modules (PIMs), 1200V MOSFETs and SiC MOSFET drivers, and AEC-Q100 qualified devices.
Silicon Carbide Schottky Diodes
ON Semiconductor Silicon Carbide (SiC) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. SiC Schottky Diodes feature no reverse recovery current, temperature independent switching, and excellent thermal performance. System benefits include high efficiency, fast operating frequency, high power density, low EMI, and reduced system size and cost.  ON Semiconductor offers 650V and 1200V devices in a range of current and package options, ideal for next-generation power system designs.
モデル メーカー 説明 ストック 価格
FFSH20120ADN-F155
DISTI # V99:2348_16116317
ON SemiconductorSIC TO247 SBD 20A 1200V314
  • 25:$9.5750
  • 10:$10.4610
  • 1:$10.6510
FFSH20120ADN-F155
DISTI # FFSH20120ADN-F155-ND
ON SemiconductorDIODE SIC 1200V 10A TO247
RoHS: Compliant
Min Qty: 450
Container: Tube
Temporarily Out of Stock
  • 450:$8.1014
FFSH20120ADN-F155
DISTI # 29495569
ON SemiconductorSIC TO247 SBD 20A 1200V11250
  • 450:$9.2217
FFSH20120ADN-F155
DISTI # 25944270
ON SemiconductorSIC TO247 SBD 20A 1200V314
  • 1:$10.6510
FFSH20120ADN_F155
DISTI # FFSH20120ADN-F155
ON Semiconductor1200V SiC SBD 20A - Rail/Tube (Alt: FFSH20120ADN-F155)
RoHS: Compliant
Min Qty: 450
Container: Tube
Americas - 0
  • 4500:$6.3900
  • 2700:$6.5900
  • 900:$6.6900
  • 1800:$6.6900
  • 450:$6.7900
FFSH20120ADN_F155
DISTI # FFSH20120ADN-F155
ON Semiconductor1200V SiC SBD 20A (Alt: FFSH20120ADN-F155)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1000:€6.0900
  • 500:€6.5900
  • 100:€6.7900
  • 50:€7.0900
  • 25:€7.3900
  • 10:€7.6900
  • 1:€8.3900
FFSH20120ADN_F155
DISTI # FFSH20120ADN_F155
ON Semiconductor1200V SiC SBD 20A - Rail/Tube (Alt: FFSH20120ADN_F155)
RoHS: Compliant
Min Qty: 450
Container: Tube
Americas - 0
    FFSH20120ADN_F155
    DISTI # FFSH20120ADN-F155
    ON Semiconductor1200V SiC SBD 20A - Bulk (Alt: FFSH20120ADN-F155)
    Min Qty: 44
    Container: Bulk
    Americas - 0
    • 440:$7.0900
    • 220:$7.2900
    • 132:$7.3900
    • 44:$7.4900
    • 88:$7.4900
    FFSH20120ADN-F155
    DISTI # 48AC1062
    ON SemiconductorSIC TO247 SBD 20A 1200V / TUBE0
    • 500:$9.4600
    • 250:$10.0900
    • 100:$10.8200
    • 50:$11.7700
    • 1:$12.9200
    FFSH20120ADN-F155
    DISTI # 512-FFSH20120ADNF155
    ON SemiconductorSchottky Diodes & Rectifiers 1200V SiC SBD 20A
    RoHS: Compliant
    194
    • 1:$10.6700
    • 10:$9.8100
    • 25:$9.4100
    • 100:$8.2900
    • 250:$7.8800
    • 500:$7.3700
    FFSH20120ADN-F155Fairchild Semiconductor Corporation 
    RoHS: Not Compliant
    421
    • 1000:$7.6500
    • 500:$8.0500
    • 100:$8.3800
    • 25:$8.7400
    • 1:$9.4100
    画像 モデル 説明
    UCC5390SCDR

    Mfr.#: UCC5390SCDR

    OMO.#: OMO-UCC5390SCDR

    Gate Drivers 10A/10A 3-kVRMS Sing ChanelIsolGateDriver
    UCC5350SBDR

    Mfr.#: UCC5350SBDR

    OMO.#: OMO-UCC5350SBDR

    Gate Drivers 5A/5A, 3-kVRMS Single-Channel
    IXFT170N25X3HV

    Mfr.#: IXFT170N25X3HV

    OMO.#: OMO-IXFT170N25X3HV

    MOSFET 250V/170A Ultra Junc tion X3-Class MOSFET
    DA-T268-401E-TR

    Mfr.#: DA-T268-401E-TR

    OMO.#: OMO-DA-T268-401E-TR

    Heat Sinks TO-268 SMD HEAT SINK ANODZD
    L1F3-U400200012000

    Mfr.#: L1F3-U400200012000

    OMO.#: OMO-L1F3-U400200012000

    High Power LEDs - Single Color UV/NUV
    DA-T268-401E-TR

    Mfr.#: DA-T268-401E-TR

    OMO.#: OMO-DA-T268-401E-TR-OHMITE

    TO-268 SMD HEAT SINK ANODZD
    WSHP2818R0100FEA

    Mfr.#: WSHP2818R0100FEA

    OMO.#: OMO-WSHP2818R0100FEA-VISHAY-DALE

    RES 0.01 OHM 1% 10W 2818
    MCKK2012TR47M

    Mfr.#: MCKK2012TR47M

    OMO.#: OMO-MCKK2012TR47M-TAIYO-YUDEN

    FIXED IND 470NH 4.5A 39 MOHM SMD
    IXFT170N25X3HV

    Mfr.#: IXFT170N25X3HV

    OMO.#: OMO-IXFT170N25X3HV-IXYS-CORPORATION

    MOSFET N-CH 250V 170A TO268HV
    SGNMNC3706EK

    Mfr.#: SGNMNC3706EK

    OMO.#: OMO-SGNMNC3706EK-SPRAGUE-GOODMAN

    Trimmer / Variable Capacitors Trimmer / Variable Capacitors 2-70pF 6000 Volts Hgh Vlt Non-Magnetic
    可用性
    ストック:
    194
    注文中:
    2177
    数量を入力してください:
    FFSH20120ADN-F155の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
    参考価格(USD)
    単価
    小計金額
    1
    $10.67
    $10.67
    10
    $9.81
    $98.10
    25
    $9.41
    $235.25
    100
    $8.29
    $829.00
    250
    $7.88
    $1 970.00
    500
    $7.37
    $3 685.00
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