T1G4004532-FL

Mfr. #:: T1G4004532-FL
メーカー:: Qorvo
説明:: RF JFET Transistors DC-35.GHz GaN 45w 32v Gain >19dB
ライフサイクル:: メーカー新製品
データシート:: T1G4004532-FL データシート
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ECAD Model:
詳しくは:: T1G4004532-FL 詳しくは

製品属性
属性値

メーカー：: カーボ

製品カテゴリ：: RFJFETトランジスタ

JBoss：: Y

テクノロジー：: GaN SiC

Vds-ドレイン-ソース間降伏電圧：: 32 V

Vgs-ゲート-ソース間降伏電圧：: 100 V

Pd-消費電力：: 45 W

取り付けスタイル：: SMD / SMT

包装：: トレイ

構成：: 独身

高さ：: 4.064 mm

長さ：: 20.3 mm

幅：: 5.842 mm

ブランド：: カーボ

ゲート-ソースカットオフ電圧：: - 2.9 V

感湿性：: はい

製品タイプ：: RFJFETトランジスタ

ファクトリーパックの数量：: 36

サブカテゴリ：: トランジスタ

パーツ番号エイリアス：: 1092442

Tags: T1G4004, T1G400, T1G4, T1G

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

T1G4004532-FL 説明

***W: RF Power Transistor, DC to 3.5 GHz, 45 W, 19 dB, 32V, GaN

T1G4004532-FL 詳しくは

T1G4004532 GaN RF Power Transistors: Qorvo T1G4004532 GaN RF Power Transistors are 45W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5GHz. The device is constructed with Qorvo's proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. Lead-free and ROHS compliant.Learn More

QPD GaN RF Transistors: Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

Market price

モデル	メーカー	説明	ストック	価格
T1G4004532-FL DISTI # 772-T1G4004532-FL	Qorvo	RF JFET Transistors DC-35.GHz GaN 45w 32v Gain >19dB RoHS: Compliant	30	1:$240.0000 25:$216.6000

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