FCP11N60F

Mfr. #:: FCP11N60F
メーカー:: ON Semiconductor
説明:: MOSFET N-CH 600V 11A TO-220
ライフサイクル:: メーカー新製品
データシート:: FCP11N60F データシート
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製品属性
属性値

メーカー: フェアチャイルド

製品カテゴリ: ICチップ

シリーズ: SuperFET FRFET

包装: チューブ

単位重量: 0.063493 oz

取り付けスタイル: スルーホール

パッケージ-ケース: TO-220-3

テクノロジー: Si

チャネル数: 1 Channel

構成: 独身

トランジスタタイプ: 1 N-Channel

Pd-電力損失: 125 W

最高作動温度: + 150 C

最低作動温度: - 55 C

立ち下がり時間: 56 ns

立ち上がり時間: 98 ns

Vgs-Gate-Source-Voltage: 30 V

Id-連続-ドレイン-電流: 11 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 600 V

Rds-On-Drain-Source-Resistance: 380 mOhms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 119 ns

典型的なターンオン遅延時間: 34 ns

フォワード-相互コンダクタンス-最小: 9.7 S

チャネルモード: 強化

Tags: FCP11N60, FCP11N, FCP11, FCP1, FCP

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We provide 90-360 days warranty.

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FCP11N60F 説明

***Semiconductor: N-Channel Power MOSFET, SUPERFET®, FRFET®, 600 V, 11 A, 380 mΩ, TO-220

***p One Stop Global: Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220AB Rail

***Components: MOSFET N-Channel 600V 11A TO220AB

***i-Key: MOSFET N-CH 600V 11A TO-220

***ukat: N-Ch 600V 11A 125W 0,38R TO220

***ser: MOSFETs 600V, NCH MOSFET

***eco: 3 LD PLASTIC W/EXPOSED HEATSNK <AZ

***inecomponents.com: 600V N-Channel SuperFET

***ure Electronics: 600V, NCH MOSFET

***ark: MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:11A; Resistance, Rds On:0.38ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-220; Termination ;RoHS Compliant: Yes

***nell: MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:11A; Resistance, Rds On:0.38ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-220; Termination Type:Through Hole; Current, Idm Pulse:33A; Max Repetitive Avalanche Energy:12.5mJ; Pin Configuration:1(G), 2(D), 3(S); Power, Pd:125W; Voltage, Rds Measurement:10V; Voltage, Vds Max:650V; Voltage, Vgs Max:5V

***ment14 APAC: MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:650V; On Resistance Rds(on):380mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:125W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:11A; Package / Case:TO-220; Pin Configuration:1(G), 2(D), 3(S); Power Dissipation Pd:125W; Power Dissipation Pd:125W; Pulse Current Idm:33A; Repetitive Avalanche Energy Max:12.5mJ; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V

***rchild Semiconductor: SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.

***th Star Micro: SuperFETTM is, Fairchild's proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. Product Highlights: 650V @TJ = 150C Typ. RDS(on) = 0.32W Fast Recovery Type (trr = 120ns) Ultra Low Gate Charge (typ. Qg = 40nC) Low Effective Output Capacitance (typ. Cosseff.=95pF) 100% avalanche tested

Market price

モデル	メーカー	説明	ストック	価格
FCP11N60F DISTI # V99:2348_06359358	ON Semiconductor	600V N-CHANNEL SUPERFET	300	5000:$1.4630 2000:$1.4769 1000:$1.5550 500:$1.8120 250:$2.0040 100:$2.1140 10:$2.4000 1:$2.7620
FCP11N60F DISTI # FCP11N60FFS-ND	ON Semiconductor	MOSFET N-CH 600V 11A TO-220 RoHS: Compliant Min Qty: 1 Container: Tube	On Order	1000:$1.9176 500:$2.2604 100:$2.7745 10:$3.3680 1:$3.7600
FCP11N60F DISTI # 30293559	ON Semiconductor	600V N-CHANNEL SUPERFET	300	250:$2.0040 100:$2.1140 10:$2.4000 4:$2.7620
FCP11N60F DISTI # 31087105	ON Semiconductor	600V N-CHANNEL SUPERFET	100	5000:$1.5236 2000:$1.5360 1000:$1.6128 500:$1.9104 250:$2.1312 100:$2.2464 10:$2.5920
FCP11N60F DISTI # FCP11N60F	ON Semiconductor	Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220AB Rail (Alt: FCP11N60F) RoHS: Compliant Min Qty: 1	Europe - 250	1:€1.8900 10:€1.6900 25:€1.6900 50:€1.5900 100:€1.4900 500:€1.4900 1000:€1.3900
FCP11N60F DISTI # FCP11N60F	ON Semiconductor	Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FCP11N60F) RoHS: Compliant Min Qty: 1000 Container: Tube	Americas - 0	1000:$1.4900 2000:$1.4900 4000:$1.4900 6000:$1.4900 10000:$1.3900
FCP11N60F DISTI # FCP11N60F	ON Semiconductor	Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220AB Rail (Alt: FCP11N60F) RoHS: Compliant Min Qty: 1000	Asia - 0
FCP11N60F	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	2246	1000:$1.9600 500:$2.0600 100:$2.1400 25:$2.2400 1:$2.4100
FCP11N60F DISTI # 512-FCP11N60F	ON Semiconductor	MOSFET 600V NCH MOSFET RoHS: Compliant	104	1:$3.1800 10:$2.7000 100:$2.3400 250:$2.2200 500:$1.9900 1000:$1.6800 2000:$1.6000 5000:$1.5400
FCP11N60F	ON Semiconductor	600 V N-CHANNEL MOSFET ROHS COMPLIANT, TO-220, 3 PIN RoHS: Compliant	Europe - 100
FCP11N60F DISTI # 1228346	ON Semiconductor	MOSFET, N, TO-220 RoHS: Compliant	0	1:$5.0300 10:$4.2800 100:$3.7100 250:$3.5200 500:$3.1500 1000:$2.6600 2000:$2.5400 5000:$2.4400
FCP11N60F DISTI # C1S541901387354	ON Semiconductor	Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	300	250:$2.0040 100:$2.1140 10:$2.4000 1:$2.7620
FCP11N60F DISTI # C1S226600615369	ON Semiconductor	Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	100	100:$2.7300 50:$2.9700 10:$3.6100 1:$5.5700

画像	モデル	説明
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FCP11N60F

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes