SIS452DN-T1-GE3

Mfr. #:: SIS452DN-T1-GE3
メーカー:: Vishay / Siliconix
説明:: MOSFET 12V Vds 20V Vgs PowerPAK 1212-8
ライフサイクル:: メーカー新製品
データシート:: SIS452DN-T1-GE3 データシート
配達:: DHL FedEx Ups TNT EMS
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ECAD Model:

製品属性
属性値

メーカー：: ビシェイ

製品カテゴリ：: MOSFET

JBoss：: E

テクノロジー：: Si

商標名：: TrenchFET、PowerPAK

包装：: リール

シリーズ：: SIS

ブランド：: Vishay / Siliconix

製品タイプ：: MOSFET

ファクトリーパックの数量：: 3000

サブカテゴリ：: MOSFET

パーツ番号エイリアス：: SIS452DN-GE3

Tags: SIS45, SIS4, SIS

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIS452DN-T1-GE3 説明

***ure Electronics: Trans MOSFET N-CH 12V 27.9A 8-Pin PowerPAK 1212 T/R

***i-Key: MOSFET N-CH 12V 35A 1212-8 PPAK

***: N-CHANNEL 12-V (D-S)

***ark: Transistor Polarity:n Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:12V; On Resistance Rds(On):0.0026Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.2V; Power Dissipation Pd:3.8W; No. Of Pins:8Pins Rohs Compliant: Yes

***nell: MOSFET,N CH,DIODE,12V,35A,PPAK1212-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:12V; On State Resistance:2600µohm; Rds(on) Test Voltage Vgs:10V; Voltage Vgs Max:20V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; Current Id Max:27.9A; Power Dissipation:3.8W

***ment14 APAC: MOSFET,N CH,DIODE,12V,35A,PPAK1212-8; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:12V; On Resistance Rds(on):2600µohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:3.8W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; Current Id Max:27.9A; Voltage Vgs Max:20V

Market price

モデル	メーカー	説明	ストック	価格
SIS452DN-T1-GE3 DISTI # V72:2272_09216101	Vishay Intertechnologies	Trans MOSFET N-CH 12V 27.9A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	1	75000:$0.4738 30000:$0.4787 15000:$0.4835 6000:$0.4884 3000:$0.4932 1000:$0.4981 500:$0.5030 250:$0.5078 100:$0.5127 50:$0.5175 25:$0.5750 10:$0.6389 1:$0.7640
SIS452DN-T1-GE3 DISTI # SIS452DN-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 12V 35A 1212-8 PPAK Min Qty: 3000 Container: Tape & Reel (TR)	Limited Supply - Call
SIS452DN-T1-GE3 DISTI # SIS452DN-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 12V 35A 1212-8 PPAK Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
SIS452DN-T1-GE3 DISTI # SIS452DN-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 12V 35A 1212-8 PPAK Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
SIS452DN-T1-GE3 DISTI # 86R3816	Vishay Intertechnologies	N-CHANNEL 12-V (D-S) MOSFET RoHS: Not Compliant	3000	1:$0.4450 3000:$0.4450 6000:$0.4450 12000:$0.4450 18000:$0.4450 30000:$0.4450
SIS452DN-T1-GE3. DISTI # 23AC9587	Vishay Intertechnologies	Transistor Polarity:N Channel,Continuous Drain Current Id:35A,Drain Source Voltage Vds:12V,On Resistance Rds(on):0.0026ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.2V,Power Dissipation Pd:3.8W,No. of Pins:8Pins RoHS Compliant: Yes RoHS: Compliant	0	30000:$0.4690 18000:$0.4770 12000:$0.4840 6000:$0.5030 3000:$0.5170 1:$0.5300
SIS452DN-T1-GE3 DISTI # XSFT00000030941	Vishay Siliconix	S1W0 SERIES HIGH POWER LED EMITTER 6500K COOL WHITE80 CRI 271 LM MIN 0.7A RoHS: Compliant	6000 in Stock0 on Order	3000:$1.0100

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