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IPB020NE7N3 G

IPB020NE7N3 G
Mfr. #:
IPB020NE7N3 G
メーカー:
Infineon Technologies
説明:
Trans MOSFET N-CH 75V 120A 3-Pin TO-263 T/R - Bulk (Alt: IPB020NE7N3G)
ライフサイクル:
メーカー新製品
データシート:
IPB020NE7N3 G データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
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ECAD Model:
詳しくは:
IPB020NE7N3 G 詳しくは
製品属性
属性値
Tags
IPB020NE7N3G, IPB020NE, IPB020, IPB02, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
CoolMOS™ N-Channel MOSFETs
Infineon CoolMOS™ N-Channel Power MOSFETs set the standard for high performance and energy efficiency. The Infineon OptiMOS low voltage MOSFET family demonstrates a combination of the industry's lowest on-state resistance and best switching performance in the voltage range from 20V up to 250V. The new OptiMOS 25V and 30V product family sets new standards in power density and energy efficiency for discrete power MOSFETs. These devices are application-specific optimized for power supplies of servers, notebooks, telecom / datacom switches, and more. The revolutionary Infineon CoolMOS power family sets new standards in energy efficiency and is a technology leader in high voltage MOSFETs. The CoolMOS offers a significant reduction of conduction and switching losses and enables high power density and efficiency for superior power conversion systems. CoolMOS C6 / E6 Power MOSFETs combine the advantage of state-of-the-art superjunction devices with the strengths of conventional power semiconductors. Infineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
モデル メーカー 説明 ストック 価格
IPB020NE7N3GATMA1
DISTI # V72:2272_06377372		Infineon Technologies AGTrans MOSFET N-CH 75V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		1000
  • 1000:$2.7250
  • 500:$3.3590
  • 250:$3.9820
  • 100:$4.0220
  • 25:$4.9509
  • 10:$5.0010
  • 1:$6.1787
IPB020NE7N3GATMA1
DISTI # V36:1790_06377372		Infineon Technologies AGTrans MOSFET N-CH 75V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		0
  • 1000000:$2.3000
  • 500000:$2.3020
  • 100000:$2.4680
  • 10000:$2.7450
  • 1000:$2.7900
IPB020NE7N3GATMA1
DISTI # IPB020NE7N3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 75V 120A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3171In Stock
  • 500:$3.5450
  • 100:$4.1643
  • 10:$5.0830
  • 1:$5.6600
IPB020NE7N3GATMA1
DISTI # IPB020NE7N3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 75V 120A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3171In Stock
  • 500:$3.5450
  • 100:$4.1643
  • 10:$5.0830
  • 1:$5.6600
IPB020NE7N3GATMA1
DISTI # IPB020NE7N3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 75V 120A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		2000In Stock
  • 2000:$2.7575
  • 1000:$2.9027
IPB020NE7N3GATMA1
DISTI # 32911882		Infineon Technologies AGTrans MOSFET N-CH 75V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		1000
  • 1000:$2.4235
IPB020NE7N3GATMA1
DISTI # 32914046		Infineon Technologies AGTrans MOSFET N-CH 75V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		1000
  • 3:$6.1787
IPB020NE7N3 G
DISTI # IPB020NE7N3G		Infineon Technologies AGTrans MOSFET N-CH 75V 120A 3-Pin TO-263 T/R - Bulk (Alt: IPB020NE7N3G)
RoHS: Not Compliant
Min Qty: 139
Container: Bulk		Americas - 0
  • 695:$2.4900
  • 1390:$2.4900
  • 417:$2.5900
  • 278:$2.6900
  • 139:$2.7900
IPB020NE7N3GATMA1
DISTI # IPB020NE7N3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 75V 120A 3-Pin(2+Tab) TO-263 - Bulk (Alt: IPB020NE7N3GATMA1)
RoHS: Compliant
Min Qty: 142
Container: Bulk		Americas - 0
  • 710:$2.1900
  • 1420:$2.1900
  • 426:$2.2900
  • 284:$2.3900
  • 142:$2.4900
IPB020NE7N3GATMA1
DISTI # IPB020NE7N3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 75V 120A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB020NE7N3GATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 6000:$2.4900
  • 10000:$2.4900
  • 4000:$2.5900
  • 2000:$2.6900
  • 1000:$2.7900
IPB020NE7N3GATMA1
DISTI # SP000676950		Infineon Technologies AGTrans MOSFET N-CH 75V 120A 3-Pin(2+Tab) TO-263 (Alt: SP000676950)
RoHS: Compliant
Min Qty: 1000		Europe - 0
  • 10000:€2.0900
  • 6000:€2.2900
  • 4000:€2.3900
  • 2000:€2.4900
  • 1000:€2.5900
IPB020NE7N3GATMA1
DISTI # 85X6012		Infineon Technologies AGMOSFET Transistor, N Channel, 120 A, 75 V, 0.0018 ohm, 10 V, 3.1 V RoHS Compliant: Yes0
    IPB020NE7N3 G
    DISTI # 726-IPB020NE7N3GXT    		Infineon Technologies AGMOSFET N-Ch 75V 120A D2PAK-2 OptiMOS 3
    RoHS: Compliant    		525
    • 1:$5.2200
    • 10:$4.4400
    • 100:$3.8500
    • 250:$3.6500
    • 500:$3.2700
    • 1000:$2.7600
    • 2000:$2.6200
    IPB020NE7N3GInfineon Technologies AGPower Field-Effect Transistor, 120A I(D), 75V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RoHS: Compliant    		5948
    • 1000:$2.5900
    • 500:$2.7300
    • 100:$2.8400
    • 25:$2.9600
    • 1:$3.1900
    IPB020NE7N3GATMA1Infineon Technologies AGPower Field-Effect Transistor, 120A I(D), 75V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RoHS: Compliant    		10245
    • 1000:$2.3300
    • 500:$2.4500
    • 100:$2.5500
    • 25:$2.6600
    • 1:$2.8700
    IPB020NE7N3GATMA1
    DISTI # 8259213P    		Infineon Technologies AGMOSFET N-CH 120A 75V OPTIMOS3 TO263, RL1630
    • 25:£2.0800
    IPB020NE7N3GATMA1
    DISTI # 8259213    		Infineon Technologies AGMOSFET N-CH 120A 75V OPTIMOS3 TO263, PK150
    • 25:£2.0800
    • 5:£2.1340
    IPB020NE7N3GATMA1
    DISTI # IPB020NE7N3GATMA1    		Infineon Technologies AGTransistor: N-MOSFET,unipolar,75V,120A,300W,PG-TO263-3379
    • 100:$1.9933
    • 10:$2.3875
    • 3:$2.5902
    • 1:$2.7816
    IPB020NE7N3 G
    DISTI # TMOSP10315    		Infineon Technologies AGN-CH75V 120A2mOhm TO263-3
    RoHS: Compliant    		Stock DE - 2005Stock HK - 0Stock US - 0
    • 1000:$2.6000
    IPB020NE7N3GATMA1
    DISTI # 2443378    		Infineon Technologies AGMOSFET, N CH, 75V, 120A, TO-263-3
    RoHS: Compliant    		0
    • 1000:$4.1600
    • 500:$4.9300
    • 250:$5.5000
    • 100:$5.8000
    • 10:$6.6900
    • 1:$7.8700
    IPB020NE7N3GATMA1
    DISTI # 2443378RL    		Infineon Technologies AGMOSFET, N CH, 75V, 120A, TO-263-3
    RoHS: Compliant    		0
    • 1000:$4.1600
    • 500:$4.9300
    • 250:$5.5000
    • 100:$5.8000
    • 10:$6.6900
    • 1:$7.8700
    画像 モデル 説明
    IPB020N08N5ATMA1

    Mfr.#: IPB020N08N5ATMA1

    OMO.#: OMO-IPB020N08N5ATMA1

    		 MOSFET N-Ch 80V 120A D2PAK-2
    IPB020N04N G

    Mfr.#: IPB020N04N G

    OMO.#: OMO-IPB020N04N-G

    		 MOSFET N-Ch 40V 140A D2PAK-6 OptiMOS 3
    IPB020N10N5LFATMA1

    Mfr.#: IPB020N10N5LFATMA1

    OMO.#: OMO-IPB020N10N5LFATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 100V D2PAK-3
    IPB020N04NG

    Mfr.#: IPB020N04NG

    OMO.#: OMO-IPB020N04NG-1190

    		 ブランドニューオリジナル
    IPB020N04NGATMA1

    Mfr.#: IPB020N04NGATMA1

    OMO.#: OMO-IPB020N04NGATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 40V 140A TO263-7
    IPB020N10N5LF

    Mfr.#: IPB020N10N5LF

    OMO.#: OMO-IPB020N10N5LF-1190

    		 SP001503854 , DIFFERENTIATED MOSFETS (Alt: IPB020N10N5LF)
    IPB020NE7N3G(020NE7N)

    Mfr.#: IPB020NE7N3G(020NE7N)

    OMO.#: OMO-IPB020NE7N3G-020NE7N--1190

    		 ブランドニューオリジナル
    IPB020N04N G

    Mfr.#: IPB020N04N G

    OMO.#: OMO-IPB020N04N-G-124

    		 Darlington Transistors MOSFET N-Ch 40V 140A D2PAK-6 OptiMOS 3
    IPB020N10N5ATMA1

    Mfr.#: IPB020N10N5ATMA1

    OMO.#: OMO-IPB020N10N5ATMA1-INFINEON-TECHNOLOGIES

    		 IGBT Transistors MOSFET N-Ch 100V 120A D2PAK-2
    IPB020N08N5ATMA1

    Mfr.#: IPB020N08N5ATMA1

    OMO.#: OMO-IPB020N08N5ATMA1-INFINEON-TECHNOLOGIES

    		 RF Bipolar Transistors MOSFET N-Ch 80V 120A D2PAK-2
    可用性
    ストック:
    Available
    注文中:
    5500
    数量を入力してください:
    IPB020NE7N3 Gの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
    参考価格（USD）
    量
    単価
    小計金額
    1
    $3.93
    $3.93
    10
    $3.73
    $37.34
    100
    $3.54
    $353.70
    500
    $3.34
    $1 670.25
    1000
    $3.14
    $3 144.00
    皮切りに
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