DF1400R12IP4D

Mfr. #:: DF1400R12IP4D
メーカー:: Infineon Technologies
説明:: IGBT Modules IGBT MODULES 1200V 1400A
ライフサイクル:: メーカー新製品
データシート:: DF1400R12IP4D データシート
配達:: DHL FedEx Ups TNT EMS
支払い:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

製品属性
属性値

メーカー：: インフィニオン

製品カテゴリ：: IGBTモジュール

包装：: トレイ

ブランド：: インフィニオンテクノロジーズ

製品タイプ：: IGBTモジュール

ファクトリーパックの数量：: 2

サブカテゴリ：: IGBT

パーツ番号エイリアス：: DF1400R12IP4DBOSA1 SP000721134

Tags: DF140, DF14, DF1

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

DF1400R12IP4D 説明

***et: IGBT Module N-Ch 1200V 1400A

***i-Key: IGBT MODULE VCES 1200V 1400A

***ronik: DF-Chopper 1200V 1400A PRIMEP

***ark: IGBT Module; Module Configuration:Chopper; Transistor Polarity:N Channel; DC Collector Current:1400A; Collector Emitter Voltage Vces:1.2kV; Power Dissipation Pd:7.7kW; No. of Pins:12 ;RoHS Compliant: Yes

***nell: IGBT,HIG POW,CHOP MOD NTC,1200V,1400A; Transistor Polarity:N Channel; DC Collector Current:1400A; Collector Emitter Voltage Vces:1.75V; Power Dissipation Max:7.7kW; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; No. of Pins:12

***ment14 APAC: IGBT, HIG POW, 1200V, 1400A; Module Configuration:Single; Transistor Polarity:N Channel; DC Collector Current:1400A; Collector Emitter Voltage Vces:1.75V; Power Dissipation Pd:7.7kW; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:Module; No. of Pins:12; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:7.7kW

***ineon: 1200V PrimePACK3 chopper IGBT module with Trench/Fieldstop IGBT4, increased Emitter Controlled 4 diode and NTC. | Summary of Features: Extended Operation Temperature T(tvj op); High DC Stability; High Short Circuit Capability, Self Limiting Short Circuit Current; V(cesat) with positive Temperature Coefficient; Low V(cesat); 4kV AC 1min Insulation; Package with CTI > 400; High Creepage and Clearance Distances; High Power and Thermal Cycling Capability; Substrate for Low Thermal Resistance; UL recognized | Benefits: High Power Density; Standardized housing | Target Applications: drives; wind; solar; cav; ups

Market price

モデル	メーカー	説明	ストック	価格
DF1400R12IP4DBOSA1 DISTI # DF1400R12IP4DBOSA1-ND	Infineon Technologies AG	IGBT MODULE VCES 1200V 1400A RoHS: Not compliant Min Qty: 2 Container: Bulk	Temporarily Out of Stock	2:$644.2000
DF1400R12IP4DBOSA1 DISTI # DF1400R12IP4DBOSA1	Infineon Technologies AG	IGBT Module N-Ch 1200V 1400A - Trays (Alt: DF1400R12IP4DBOSA1) RoHS: Compliant Min Qty: 2 Container: Tray	Americas - 0	2:$684.1900 4:$659.4900 8:$635.5900 12:$614.2900 20:$603.2900
DF1400R12IP4D	Infineon Technologies AG	Insulated Gate Bipolar Transistor, 1400A I(C), 1200V V(BR)CES, N-Channel RoHS: Compliant	2	1000:$562.0000 500:$591.5800 100:$615.8900 25:$642.2900 1:$691.6900
DF1400R12IP4DBOSA1	Infineon Technologies AG	Insulated Gate Bipolar Transistor, 1400A I(C), 1200V V(BR)CES, N-Channel RoHS: Compliant	86	1000:$515.1700 500:$542.2900 100:$564.5700 25:$588.7700 1:$634.0600
DF1400R12IP4D DISTI # 641-DF1400R12IP4D	Infineon Technologies AG	IGBT Modules IGBT MODULES 1200V 1400A	2	1:$641.1100 5:$602.4700
DF1400R12IP4D	Infineon Technologies AG		1	1:$1,374.4500

DF1400R12IP4D

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes