FDC6301N

Mfr. #:: FDC6301N
メーカー:: ON Semiconductor
説明:: MOSFET 2N-CH 25V 0.22A SSOT6
ライフサイクル:: メーカー新製品
データシート:: FDC6301N データシート
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製品属性
属性値

メーカー: フェアチャイルド

製品カテゴリ: FET-アレイ

シリーズ: -

包装: Digi-ReelR代替パッケージ

パーツエイリアス: FDC6301N_NL

単位重量: 0.001270 oz

取り付けスタイル: SMD / SMT

パッケージ-ケース: SOT-23-6 Thin, TSOT-23-6

テクノロジー: Si

作動温度: -55°C ~ 150°C (TJ)

取付タイプ: 表面実装

チャネル数: 2 Channel

サプライヤー-デバイス-パッケージ: SuperSOT-6

構成: デュアル

FETタイプ: 2 N-Channel (Dual)

パワーマックス: 700mW

トランジスタタイプ: 2 N-Channel

Drain-to-Source-Voltage-Vdss: 25V

入力-静電容量-Ciss-Vds: 9.5pF @ 10V

FET機能: ロジックレベルゲート

Current-Continuous-Drain-Id-25°C: 220mA

Rds-On-Max-Id-Vgs: 4 Ohm @ 400mA, 4.5V

Vgs-th-Max-Id: 1.5V @ 250μA

ゲートチャージ-Qg-Vgs: 0.7nC @ 4.5V

Pd-電力損失: 900 mW

最高作動温度: + 150 C

最低作動温度: - 55 C

立ち下がり時間: 4.5 ns

立ち上がり時間: 4.5 ns

Vgs-Gate-Source-Voltage: - 500 mV + 8 V

Id-連続-ドレイン-電流: 220 mA

Vds-ドレイン-ソース-ブレークダウン-電圧: 25 V

Rds-On-Drain-Source-Resistance: 3.8 Ohms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 4 ns

典型的なターンオン遅延時間: 5 ns

フォワード-相互コンダクタンス-最小: 0.25 S

チャネルモード: 強化

Tags: FDC6301N, FDC6301, FDC630, FDC63, FDC6, FDC

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDC6301N 説明

***fin: Transistor NPN Field Effect FDC6301N FAIRCHILD RoHS milliampere=220 V=25 SSOT6

***C: Trans MOSFET N-CH 25V 0.22A 6-Pin SuperSOT Trans MOSFET N-CH 25V 0.22A 6-Pin SuperSOT Trans MOSFET N-CH 25V 0.22A 6-Pin SuperSOT

***rchild Semiconductor: These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild 's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, these N-Channel FET's can replace several digital transistors, with a variety of bias resistors.

Market price

モデル	メーカー	説明	ストック	価格
FDC6301N DISTI # FDC6301NCT-ND	ON Semiconductor	MOSFET 2N-CH 25V 0.22A SSOT6 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	4In Stock	1000:$0.1407 500:$0.1876 100:$0.2736 10:$0.3990 1:$0.5100
FDC6301N DISTI # FDC6301NDKR-ND	ON Semiconductor	MOSFET 2N-CH 25V 0.22A SSOT6 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	4In Stock	1000:$0.1407 500:$0.1876 100:$0.2736 10:$0.3990 1:$0.5100
FDC6301N DISTI # FDC6301NTR-ND	ON Semiconductor	MOSFET 2N-CH 25V 0.22A SSOT6 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	3000:$0.1252
FDC6301N_G DISTI # FDC6301N_G-ND	ON Semiconductor	MOSFET 2 N-CH 25V SUPERSOT6 RoHS: Compliant Container: Tape & Reel (TR)	Limited Supply - Call
FDC6301N DISTI # FDC6301N	ON Semiconductor	Trans MOSFET N-CH 25V 0.22A 6-Pin SuperSOT T/R (Alt: FDC6301N) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€0.0909 6000:€0.0879 12000:€0.0859 18000:€0.0859 30000:€0.0859
FDC6301N DISTI # FDC6301N	ON Semiconductor	Trans MOSFET N-CH 25V 0.22A 6-Pin SuperSOT T/R (Alt: FDC6301N) RoHS: Compliant Min Qty: 6000 Container: Tape and Reel	Asia - 0
FDC6301N DISTI # FDC6301N	ON Semiconductor	Trans MOSFET N-CH 25V 0.22A 6-Pin SuperSOT T/R - Tape and Reel (Alt: FDC6301N) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.0979 6000:$0.0969 12000:$0.0969 18000:$0.0969 30000:$0.0969
FDC6301N DISTI # FDC6301N	ON Semiconductor	Trans MOSFET N-CH 25V 0.22A 6-Pin SuperSOT T/R - Cut TR (SOS) (Alt: FDC6301N) RoHS: Compliant Min Qty: 1 Container: Cut Tape	Americas - 0	1:$0.3899 30:$0.3589 75:$0.2829 150:$0.2459 375:$0.1939 750:$0.1399 1500:$0.1259
FDC6301N DISTI # 58K8818	ON Semiconductor	Trans MOSFET N-CH 25V 0.22A 6-Pin SuperSOT T/R - Product that comes on tape, but is not reeled (Alt: 58K8818) RoHS: Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$0.4100 25:$0.3060 50:$0.2360 100:$0.1660 250:$0.1520 500:$0.1390 1000:$0.1250
FDC6301N DISTI # 58K8818	ON Semiconductor	DUAL N CHANNEL MOSFET, 25V, SUPER SOT-6,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:220mA,Drain Source Voltage Vds:25V,On Resistance Rds(on):4ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:850mV RoHS Compliant: Yes	0	1:$0.4160 25:$0.3120 50:$0.2420 100:$0.1720 250:$0.1580 500:$0.1450 1000:$0.1310
FDC6301N.. DISTI # 47T5014	ON Semiconductor	MOSFET, NN CHANNEL, 25V, 0.22A, SSOT6,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:220mA,Drain Source Voltage Vds:25V,On Resistance Rds(on):5ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:850mV RoHS Compliant: Yes	0	1:$0.4100 10:$0.3060 25:$0.2590 50:$0.2130 100:$0.1660 250:$0.1520 500:$0.1390 1000:$0.1250
FDC6301N. DISTI # 25AC9524	Fairchild Semiconductor Corporation	25V DUAL N-FET 4 O SSOT6 ROHS COMPLIANT: YES	0	1:$0.0960 6000:$0.0930 12000:$0.0910 30000:$0.0900
FDC6301N DISTI # 512-FDC6301N	ON Semiconductor	MOSFET SSOT-6 N-CH 25V RoHS: Compliant	965	1:$0.4100 10:$0.3060 100:$0.1660 1000:$0.1250 3000:$0.1070 9000:$0.1010
FDC6301N_Q DISTI # 512-FDC6301N_Q	ON Semiconductor	MOSFET SSOT-6 N-CH 25V RoHS: Not compliant	0
FDC6301N	Fairchild Semiconductor Corporation	Small Signal Field-Effect Transistor, 0.22A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	1	1000:$0.1300 100:$0.1400 500:$0.1400 25:$0.1500 1:$0.1600
FDC6301N	Freescale Semiconductor	MOSFET Transistor, Matched Pair, N-Channel, SO	45	23:$0.2700 7:$0.4500 1:$0.9000
FDC6301N	Fairchild Semiconductor Corporation		2202
FDC6301N	Fairchild Semiconductor Corporation	INSTOCK	2396
FDC6301N	Fairchild Semiconductor Corporation		133
FDC6301N	Fairchild Semiconductor Corporation		3961
FDC6301N			4729
FDC6301N.. DISTI # 1700673	ON Semiconductor	MOSFET, NN CH, 25V, 0.22A, SSOT6 RoHS: Compliant	205	5:£0.2640 25:£0.2530 100:£0.1290 250:£0.1250 500:£0.1030
FDC6301N.. DISTI # 1700673RL	ON Semiconductor	MOSFET, NN CH, 25V, 0.22A, SSOT6 RoHS: Compliant	0	1:$0.6490 10:$0.4850 100:$0.2630
FDC6301N.. DISTI # 2985410	ON Semiconductor	MOSFET, DUAL N-CH, 25V, 0.22A, SUPERSOT RoHS: Compliant	0	3000:$0.1650
FDC6301N.. DISTI # 1700673	ON Semiconductor	MOSFET, NN CH, 25V, 0.22A, SSOT6 RoHS: Compliant	0	1:$0.6490 10:$0.4850 100:$0.2630

画像	モデル	説明
	Mfr.#: FDC6401N OMO.#: OMO-FDC6401N	MOSFET Dual N-Ch 2.5V Spec Power Trench
	Mfr.#: FDC608PZDKR OMO.#: OMO-FDC608PZDKR-1190	ブランドニューオリジナル
	Mfr.#: FDC6322C OMO.#: OMO-FDC6322C-ON-SEMICONDUCTOR	MOSFET N/P-CH 25V SSOT-6
	Mfr.#: FDC638P-NL OMO.#: OMO-FDC638P-NL-1190	ブランドニューオリジナル
	Mfr.#: FDC6561AN-NL OMO.#: OMO-FDC6561AN-NL-1190	ブランドニューオリジナル
	Mfr.#: FDC6901L OMO.#: OMO-FDC6901L-ON-SEMICONDUCTOR	IC LOAD SWITCH INT SSOT-6
	Mfr.#: FDC6326L-CUT TAPE OMO.#: OMO-FDC6326L-CUT-TAPE-1190	ブランドニューオリジナル
	Mfr.#: FDC6420C-CUT TAPE OMO.#: OMO-FDC6420C-CUT-TAPE-1190	ブランドニューオリジナル
	Mfr.#: FDC658AP-CUT TAPE OMO.#: OMO-FDC658AP-CUT-TAPE-1190	ブランドニューオリジナル
	Mfr.#: FDC642P-F085 OMO.#: OMO-FDC642P-F085-ON-SEMICONDUCTOR	MOSFET P-CH 20V 4A 6SSOT

FDC6301N

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes