GS8161E36DD-200

GS8161E36DD-200
Mfr. #:
GS8161E36DD-200
メーカー:
GSI Technology
説明:
SRAM 2.5 or 3.3V 512K x 36 18M
ライフサイクル:
メーカー新製品
データシート:
GS8161E36DD-200 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
GS8161E36DD-200 詳しくは
製品属性
属性値
メーカー:
GSIテクノロジー
製品カテゴリ:
SRAM
包装:
トレイ
シリーズ:
GS8161E36DD
ブランド:
GSIテクノロジー
感湿性:
はい
製品タイプ:
SRAM
ファクトリーパックの数量:
36
サブカテゴリ:
メモリとデータストレージ
商標名:
SyncBurst
Tags
GS8161E36DD-20, GS8161E36DD-2, GS8161E36DD, GS8161E36, GS8161E3, GS8161E, GS8161, GS816, GS81, GS8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***roFlash
SRAM Chip Sync Quad 2.5V/3.3V 18M-Bit 512K x 36 6.5ns/3ns 165-Pin FBGA
***et
SRAM Chip Sync Dual 1.8V 18M-Bit 2M x 9-Bit 0.45ns 165-Pin FBGA Tray
***-Wing Technology
e0 Surface Mount CY7C1911 Tray ic memory 250MHz 450ps 15mm 430mA
***i-Key
IC SRAM 18MBIT PARALLEL 165FBGA
***or
QDR SRAM, 2MX9, 0.45NS, CMOS, PB
***et
SRAM Chip Sync Single 1.8V 18M-Bit 512K x 36 0.45ns 165-Pin FBGA Tray
***-Wing Technology
e1 Surface Mount CY7C1321 Tray ic memory 250MHz 450ps 370mA 18Mb
***ress Semiconductor SCT
DDR-II CIO, 18 Mbit Density, BGA-165, RoHS
***DA Technology Co., Ltd.
Product Description Demo for Development.
***i-Key
IC SRAM 18MBIT PARALLEL 165FBGA
***et
SRAM Chip Sync Single 1.8V 18M-Bit 512K x 36 0.45ns 165-Pin FBGA Tray
***-Wing Technology
e0 Surface Mount CY7C1321 Tray ic memory 250MHz 450ps 370mA 18Mb
***ress Semiconductor SCT
DDR-II CIO, 18 Mbit Density, BGA-165
*** Services
CoC and 2-years warranty / RFQ for pricing
***i-Key
IC SRAM 18MBIT PARALLEL 165FBGA
***or
DDR SRAM, 512KX36, 0.45NS, CMOS,
SyncBurst SRAMs
GSI Technology SyncBurst SRAMs are a broad portfolio of Synchronous Burst (SyncBurst™) SRAMs with fast clock rates and low power. SyncBurst SRAMs provide a "burst" of (typically) 2 to 4 words in response to a single clock signal. The devices' simplified interface is designed to use a data bus's maximum bandwidth. SyncBurst SRAMs are used in military, networking, industrial, automotive and medical imaging applications where a mid-range performance point is required.Learn More
画像 モデル 説明
GS8161E36DD-150

Mfr.#: GS8161E36DD-150

OMO.#: OMO-GS8161E36DD-150

SRAM 2.5 or 3.3V 512K x 36 18M
GS8161E18DGD-400I

Mfr.#: GS8161E18DGD-400I

OMO.#: OMO-GS8161E18DGD-400I

SRAM 2.5 or 3.3V 1M x 18 18M
GS8161E36DD-375I

Mfr.#: GS8161E36DD-375I

OMO.#: OMO-GS8161E36DD-375I

SRAM 2.5 or 3.3V 512K x 36 18M
GS8161E32DGD-150

Mfr.#: GS8161E32DGD-150

OMO.#: OMO-GS8161E32DGD-150

SRAM 2.5 or 3.3V 512K x 32 16M
GS8161E36DD-333IV

Mfr.#: GS8161E36DD-333IV

OMO.#: OMO-GS8161E36DD-333IV

SRAM 1.8/2.5V 512K x 36 18M
GS8161E32DGT-333

Mfr.#: GS8161E32DGT-333

OMO.#: OMO-GS8161E32DGT-333

SRAM 2.5 or 3.3V 512K x 32 16M
GS8161E18DD-333

Mfr.#: GS8161E18DD-333

OMO.#: OMO-GS8161E18DD-333

SRAM 2.5 or 3.3V 1M x 18 18M
GS8161E36DGT-150IV

Mfr.#: GS8161E36DGT-150IV

OMO.#: OMO-GS8161E36DGT-150IV

SRAM 1.8/2.5V 512K x 36 18M
GS8161E36DD-200IV

Mfr.#: GS8161E36DD-200IV

OMO.#: OMO-GS8161E36DD-200IV

SRAM 1.8/2.5V 512K x 36 18M
GS8161E36DGD-150IV

Mfr.#: GS8161E36DGD-150IV

OMO.#: OMO-GS8161E36DGD-150IV

SRAM 1.8/2.5V 512K x 36 18M
可用性
ストック:
Available
注文中:
3500
数量を入力してください:
GS8161E36DD-200の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格(USD)
単価
小計金額
1
$14.23
$14.23
25
$13.21
$330.25
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