BSC014N04LSIATMA1

BSC014N04LSIATMA1
Mfr. #:
BSC014N04LSIATMA1
メーカー:
Infineon Technologies
説明:
MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS
ライフサイクル:
メーカー新製品
データシート:
BSC014N04LSIATMA1 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
BSC014N04LSIATMA1 詳しくは
製品属性
属性値
メーカー:
インフィニオン
製品カテゴリ:
MOSFET
JBoss:
Y
テクノロジー:
Si
取り付けスタイル:
SMD / SMT
パッケージ/ケース:
TDSON-8
チャネル数:
1 Channel
トランジスタの極性:
Nチャネル
Vds-ドレイン-ソース間降伏電圧:
40 V
Id-連続ドレイン電流:
100 A
Rds On-ドレイン-ソース抵抗:
1.2 mOhms
Vgs th-ゲート-ソースしきい値電圧:
1.2 V
Vgs-ゲート-ソース間電圧:
20 V
Qg-ゲートチャージ:
77 nC
最低動作温度:
- 55 C
最高作動温度:
+ 150 C
Pd-消費電力:
96 W
構成:
独身
チャネルモード:
強化
商標名:
OptiMOS
包装:
リール
高さ:
1.27 mm
長さ:
5.9 mm
シリーズ:
OptiMOS 5
トランジスタタイプ:
1 N-Channel
幅:
5.15 mm
ブランド:
インフィニオンテクノロジーズ
フォワード相互コンダクタンス-最小:
110 S
立ち下がり時間:
11 ns
製品タイプ:
MOSFET
立ち上がり時間:
50 ns
ファクトリーパックの数量:
5000
サブカテゴリ:
MOSFET
典型的なターンオフ遅延時間:
55 ns
典型的なターンオン遅延時間:
16 ns
パーツ番号エイリアス:
BSC014N04LSI SP000953212
単位重量:
0.004180 oz
Tags
BSC014N04, BSC014N0, BSC014, BSC01, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 40V 100A 8-Pin TDSON FL T/R
***ical
Power-MOSFET, 40V
***ineon
New 40V and 60V product families, feature not only the industrys lowest R DS(on) but also a perfect switching behavior for fast switching applications. 15% lower R DS(on) and 31% lower figure of merit (R DS(on) x Q g) compared to alternative devices has been realized by advanced thin wafer technology. | Summary of Features: Optimized for synchronous rectification; 15% lower R DS(on) than alternative devices; 31% improvement of FOM over similar devices; Integrated Schottky-like diode; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control; Or-ing switches
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
40V OptiMOS™ Power MOSFETs
Infineon's 40V OptiMOS Power MOSFETs feature 35% lower RDS(on) and 45% lower Figure of Merit (RDS(on) x Qg) compared to alternative devices. These devices are optimized for synchronous rectification in switched mode power supplies (SMPS) as well as a broad range of industrial applications such as motor control, solar micro inverters and fast switching DC/DC converters. In addition, this new generation of 40V devices offers higher switching frequencies and are enabled which results in even higher power density.  A monolithic integrated Schottky-like diode in the 40V SuperSO8 package (5mm x 6mm) leads to higher efficiency and a drastic reduction of the voltage overshoot. This in turn reduces the need for a snubber circuit and saves engineering effort and cost.Learn More
モデル メーカー 説明 ストック 価格
BSC014N04LSIATMA1
DISTI # BSC014N04LSIATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 40V 100A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
20577In Stock
  • 1000:$1.6722
  • 500:$1.9813
  • 100:$2.4966
  • 10:$3.0630
  • 1:$3.3700
BSC014N04LSIATMA1
DISTI # BSC014N04LSIATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 40V 100A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
20577In Stock
  • 1000:$1.6722
  • 500:$1.9813
  • 100:$2.4966
  • 10:$3.0630
  • 1:$3.3700
BSC014N04LSIATMA1
DISTI # BSC014N04LSIATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 40V 100A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
20000In Stock
  • 5000:$1.4734
BSC014N04LSIATMA1
DISTI # BSC014N04LSIATMA1
Infineon Technologies AGTrans MOSFET N-CH 40V 100A 8-Pin TDSON FL T/R - Tape and Reel (Alt: BSC014N04LSIATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 0
  • 5000:$1.2900
  • 10000:$1.1900
  • 20000:$1.1900
  • 30000:$1.0900
  • 50000:$1.0900
BSC014N04LSIATMA1
DISTI # SP000953212
Infineon Technologies AGTrans MOSFET N-CH 40V 100A 8-Pin TDSON FL T/R (Alt: SP000953212)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel
Europe - 0
  • 5000:€1.9139
  • 10000:€1.4899
  • 20000:€1.2389
  • 30000:€1.1559
  • 50000:€1.0989
BSC014N04LSIATMA1
DISTI # 50Y1798
Infineon Technologies AGMOSFET, N-CH, 40V, 100A, 150DEG C, 96W,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0012ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes0
  • 1000:$1.7500
  • 500:$2.0900
  • 250:$2.2100
  • 100:$2.3400
  • 50:$2.5200
  • 25:$2.7000
  • 10:$2.8900
  • 1:$3.3600
BSC014N04LSI
DISTI # 726-BSC014N04LSI
Infineon Technologies AGMOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS
RoHS: Compliant
18687
  • 1:$2.6800
  • 10:$2.2800
  • 100:$1.8200
  • 500:$1.6000
  • 1000:$1.3200
BSC014N04LSIATMA1
DISTI # 726-BSC014N04LSIATMA
Infineon Technologies AGMOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS
RoHS: Compliant
110
  • 1:$2.6800
  • 10:$2.2800
  • 100:$1.8200
  • 500:$1.6000
  • 1000:$1.3200
BSC014N04LSIATMA1
DISTI # 2480707
Infineon Technologies AGMOSFET, N-CH, 40V, 100A, TDSON-8
RoHS: Compliant
0
  • 500:£1.2400
  • 250:£1.3300
  • 100:£1.4200
  • 10:£1.7700
  • 1:£2.3600
BSC014N04LSIATMA1
DISTI # 2480707
Infineon Technologies AGMOSFET, N-CH, 40V, 100A, TDSON-8
RoHS: Compliant
0
  • 1000:$2.0900
  • 5000:$2.0900
  • 500:$2.5400
  • 100:$2.8800
  • 10:$3.6200
  • 1:$4.2500
BSC014N04LSIATMA1
DISTI # 2480707RL
Infineon Technologies AGMOSFET, N-CH, 40V, 100A, TDSON-8
RoHS: Compliant
0
  • 1000:$2.0900
  • 5000:$2.0900
  • 500:$2.5400
  • 100:$2.8800
  • 10:$3.6200
  • 1:$4.2500
画像 モデル 説明
SP1007-01ETG

Mfr.#: SP1007-01ETG

OMO.#: OMO-SP1007-01ETG

TVS Diodes / ESD Suppressors 1CH 8KV 6V
SN74LVC2G125DCUR

Mfr.#: SN74LVC2G125DCUR

OMO.#: OMO-SN74LVC2G125DCUR

Buffers & Line Drivers Tri-State Dual Bus
FDC5661N-F085

Mfr.#: FDC5661N-F085

OMO.#: OMO-FDC5661N-F085

MOSFET Trans N-Ch 60V 4.3A
MBRA160T3G

Mfr.#: MBRA160T3G

OMO.#: OMO-MBRA160T3G

Schottky Diodes & Rectifiers 1A 60V
FTSH-110-01-L-DV-007-K

Mfr.#: FTSH-110-01-L-DV-007-K

OMO.#: OMO-FTSH-110-01-L-DV-007-K

Headers & Wire Housings .050" Micro Terminal Strip
RC0402FR-0710KL

Mfr.#: RC0402FR-0710KL

OMO.#: OMO-RC0402FR-0710KL

Thick Film Resistors - SMD 10K OHM 1%
SP1007-01ETG

Mfr.#: SP1007-01ETG

OMO.#: OMO-SP1007-01ETG-LITTELFUSE

TVS Diodes - Transient Voltage Suppressors 1CH 8KV 6V
SN74LVC2G125DCUR

Mfr.#: SN74LVC2G125DCUR

OMO.#: OMO-SN74LVC2G125DCUR-TEXAS-INSTRUMENTS

Buffers & Line Drivers Tri-State Dual Bus
FDC5661N-F085

Mfr.#: FDC5661N-F085

OMO.#: OMO-FDC5661N-F085-ON-SEMICONDUCTOR

MOSFET N-CH 60V 6-SSOT
MBRA160T3G

Mfr.#: MBRA160T3G

OMO.#: OMO-MBRA160T3G-ON-SEMICONDUCTOR

Schottky Diodes & Rectifiers 1A 60V
可用性
ストック:
Available
注文中:
1992
数量を入力してください:
BSC014N04LSIATMA1の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格(USD)
単価
小計金額
1
$2.67
$2.67
10
$2.27
$22.70
100
$1.81
$181.00
500
$1.59
$795.00
1000
$1.31
$1 310.00
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