4AK18

Mfr. #:: 4AK18
メーカー:: Rochester Electronics, LLC
説明:: - Bulk (Alt: 4AK18)
ライフサイクル:: メーカー新製品
データシート:: 4AK18 データシート
配達:: DHL FedEx Ups TNT EMS
支払い:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

製品属性
属性値

Tags: 4AK1, 4AK

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

4AK18 説明

***ponent Stockers USA: 0.53 ohm POWER FET

***id Electronics: Transistor MOSFET N-Ch. 60V 2,7A 1,25W 0,092Ohm SOT23 IRLML0060TRPBF

***ineon SCT: 60V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS

***ure Electronics: Single N-Channel 60 V 116 mOhm 2.5 nC 1.25 W Silicon SMT Mosfet - SOT-23

***(Formerly Allied Electronics): MOSFET, 60V, 2.7A, 92 MOHM, 2.5 NC QG, SOT-23

***icontronic: Power Field-Effect Transistor, 2.7A I(D), 60V, 0.092ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

***ineon: Benefits: RoHS Compliant; Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1; SOT-23 Footprint | Target Applications: DC Switches; Load Switch; Load Switch High Side

***ment14 APAC: MOSFET, N CH, 60V, 2.7A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:2.7A; Drain Source Voltage Vds:60V; On Resistance Rds(on):78mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:1.25W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:2.7A; Power Dissipation Pd:1.25W; Voltage Vgs Max:16V

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 2.7 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 116 / Gate-Source Voltage V = 16 / Fall Time ns = 4.2 / Rise Time ns = 6.3 / Turn-OFF Delay Time ns = 6.8 / Turn-ON Delay Time ns = 5.4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 1.25

***(Formerly Allied Electronics): MOSFET; P-Ch; Vds -60V; Vgs +/- 20V; Rds(on) 150mohm; Id 4.7A; SO-8; Pd 5W

***ure Electronics: SI9407BDY Series 60 V 0.12 Ohm 22 nC P-Channel Surface Mount Mosfet - SOIC-8

***enic: 60V 4.7A 2.4W 120m´Î@10V3.2A 3V@250Ã×A P Channel SOIC-8_150mil MOSFETs ROHS

***nsix Microsemi: Small Signal Field-Effect Transistor, 4.7A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***ark: Mosfet, P Channel, -60V, -4.7A, Soic-8, Full Reel; Channel Type:p Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:4.7A; Transistor Mounting:surface Mount; Rds(On) Test Voltage:10V; Power Dissipation:5W Rohs Compliant: No

***nell: MOSFET, P CH, 60V, 4.7A, 8SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.7A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.1ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; Operating Temperature Range:-55°C to +150°C

***th Star Micro: Transistor MOSFET N-CH 60V 3A 4-Pin (3+Tab) SOT-223 T/R

***ure Electronics: N-Channel 60 V 120 mOhm 1.3 W Surface Mount Power MOSFET - SOT-223

***emi: Single N-Channel Logic Level Power MOSFET 60V, 3A, 120mΩ

***(Formerly Allied Electronics): MOSFET, Power,N-Ch,VDSS 68VDC,RDS(ON) 92 Milliohms,ID 3A,SOT-223 (TO-261),-55C

***r Electronics: Power Field-Effect Transistor, 3A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 3 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 120 / Gate-Source Voltage V = 15 / Fall Time ns = 27 / Rise Time ns = 35 / Turn-OFF Delay Time ns = 22 / Turn-ON Delay Time ns = 11 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 2.1

***(Formerly Allied Electronics): IRFL014TRPBF N-channel MOSFET Transistor; 2.7 A; 60 V; 3 + Tab-Pin SOT-223

***ure Electronics: Single N-Channel 60 V 0.2 Ohms Surface Mount Power Mosfet - SOT-223-3

***ical: Trans MOSFET N-CH 60V 2.7A 4-Pin(3+Tab) SOT-223 T/R

***S.I.T. Europe - USA - Asia: Small Signal Field-Effect Transistor, 2.7A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

***emi: Power MOSFET, N-Channel, Logic Level, QFET®, 60 V, 2.8 A, 110 mΩ, SOT-223

***ure Electronics: N-Channel 60 V 0.11Ohm Surface Mount Logic Mosfet - SOT-223

***et Europe: Trans MOSFET N-CH 60V 2.8A 4-Pin(3+Tab) SOT-223 T/R

***nell: MOSFET, N CH, 60V, 2.8A, SOT-223-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.8A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.088oh; Available until stocks are exhausted Alternative available

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

***(Formerly Allied Electronics): NTF2955T1G P-channel MOSFET Transistor; 2.6 A; 60 V; 3 + Tab-Pin SOT-223

***ure Electronics: P-Channel 60 V 145 mOhm 2.3 W Surface Mount Power MOSFET - SOT-223

***ical: Trans MOSFET P-CH 60V 2.6A Automotive 4-Pin(3+Tab) SOT-223 T/R

***emi: Single P-Channel Power MOSFET -60V, -2.6A, 170mΩ

***th Star Micro: This is a -60 V P-Channel MOSFET in SOT-223 package. It is an extremely rugged device and has a large safe operating area.

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 1.7A I(D), 60V, 0.185ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

***trelec: Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -2.6 / Drain-Source Voltage (Vds) V = -60 / ON Resistance (Rds(on)) mOhm = 145 / Gate-Source Voltage V = 20 / Fall Time ns = 38 / Rise Time ns = 7.6 / Turn-OFF Delay Time ns = 65 / Turn-ON Delay Time ns = 11 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = SOT-223 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 2.3

Market price

モデル	メーカー	説明	ストック	価格
4AK18 DISTI # 4AK18	Renesas Electronics Corporation	- Bulk (Alt: 4AK18) Min Qty: 62 Container: Bulk	Americas - 0	620:$5.0900 310:$5.3900 186:$5.5900 124:$5.7900 62:$6.0900
AK1862HB-AT DISTI # 664-AK1862HB-AT	ADDA USA Corporation	AC Fans AC Fan, 180x65mm, 230VAC, 380CFM, High Speed, Ball Bearing RoHS: Compliant	0	1:$92.0100 10:$86.4000 25:$82.0800 50:$77.7600 100:$73.4400
AK1862HB-AW DISTI # 664-AK1862HB-AW	ADDA USA Corporation	AC Fans AC Fan, 180x65mm, 230VAC, 380CFM, High Speed, Ball Bearing RoHS: Compliant	0	20:$80.0000 25:$76.0000 50:$72.0000 100:$68.0000
AK1861HB-AW-LF DISTI # 664-AK1861HB-AW-LF	ADDA USA Corporation	AC Fans AC Fan, 180x65mm, 115VAC, High Speed, Ball Bearing RoHS: Compliant	0	20:$75.4800 25:$71.4300 50:$67.8000 100:$64.5200
4AK18	Renesas Electronics Corporation	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET RoHS: Not Compliant	6497	1000:$5.3800 500:$5.6700 100:$5.9000 25:$6.1500 1:$6.6200
FKC4A-K189E DISTI # MOL173111-0286	Molex	FKC4A-K189E FCT HOOD S4 70 DEG SHLD PLST	Americas - 0
4AK18	Renesas Electronics Corporation		115	112:$2.0905 31:$2.2600 1:$3.3900

画像	モデル	説明
	Mfr.#: 4A24-N30-E OMO.#: OMO-4A24-N30-E-1190	30 W, 23 -30 VDC Vin, Single Output, 4000 [email protected] A DC-DC Converte
	Mfr.#: 4A32BNA11 OMO.#: OMO-4A32BNA11-HONEYWELL-SENSING-PRODUCTIVITY	Pushbutton Switches UNSEALED OI
	Mfr.#: 4A1244-0000 OMO.#: OMO-4A1244-0000-1190	ブランドニューオリジナル
	Mfr.#: 4A1302 OMO.#: OMO-4A1302-1190	ブランドニューオリジナル
	Mfr.#: 4A195-22NCT OMO.#: OMO-4A195-22NCT-1190	ブランドニューオリジナル
	Mfr.#: 4A5-32/32-10VC OMO.#: OMO-4A5-32-32-10VC-1190	ブランドニューオリジナル
	Mfr.#: 4A50 OMO.#: OMO-4A50-1190	ブランドニューオリジナル
	Mfr.#: 4ADNPD OMO.#: OMO-4ADNPD-1190	ブランドニューオリジナル
	Mfr.#: 4AGE OMO.#: OMO-4AGE-1190	ブランドニューオリジナル
	Mfr.#: 4AK24-F112 OMO.#: OMO-4AK24-F112-1190	ブランドニューオリジナル

4AK18

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes