We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| モデル | メーカー | 説明 | ストック | 価格 |
|---|---|---|---|---|
| BSC205N10LS G DISTI # BSC205N10LSGTR-ND | Infineon Technologies AG | MOSFET N-CH 100V 45A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| BSC205N10LS G DISTI # BSC205N10LSGCT-ND | Infineon Technologies AG | MOSFET N-CH 100V 45A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| BSC205N10LS G DISTI # BSC205N10LSGDKR-ND | Infineon Technologies AG | MOSFET N-CH 100V 45A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| BSC205N10LS G DISTI # 726-BSC205N10LSG | Infineon Technologies AG | MOSFET N-Ch 100V 7.4A TDSON-8 RoHS: Compliant | 0 | |
| BSC205N10LSGATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 7.4A I(D), 100V, 0.0205ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant | 10000 |
|
| BSC205N10LS G | Infineon Technologies AG | RoHS: Not Compliant | 10000 |
|
| BSC205N10LSG | Infineon Technologies AG | Power Field-Effect Transistor, 7.4A I(D), 100V, 0.0205ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 6751 |
|
| BSC205N10LSG | Infineon Technologies AG | 7.4 A, 100 V, 0.0205 ohm, N-CHANNEL, Si, POWER, MOSFET | 4899 |
|
| 画像 | モデル | 説明 |
|---|---|---|
|
Mfr.#: BSC205N10LS G OMO.#: OMO-BSC205N10LS-G |
MOSFET N-Ch 100V 7.4A TDSON-8 |
|
Mfr.#: BSC200N15NS3G OMO.#: OMO-BSC200N15NS3G-1190 |
ブランドニューオリジナル |
|
|
Mfr.#: BSC200N15NSG OMO.#: OMO-BSC200N15NSG-1190 |
ブランドニューオリジナル |
|
|
Mfr.#: BSC200P03LS OMO.#: OMO-BSC200P03LS-1190 |
ブランドニューオリジナル |
|
|
Mfr.#: BSC200P03LS G OMO.#: OMO-BSC200P03LS-G-1190 |
MOSFET P-Ch -30V -12.5A TDSON-8 OptiMOS P |
|
Mfr.#: BSC200P03LSGAUMA1 |
MOSFET P-CH 30V 12.5A TDSON-8 |
|
|
Mfr.#: BSC205N10LSG OMO.#: OMO-BSC205N10LSG-1190 |
Power Field-Effect Transistor, 7.4A I(D), 100V, 0.0205ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
|
Mfr.#: BSC205N10LSGATMA1 OMO.#: OMO-BSC205N10LSGATMA1-1190 |
Power Field-Effect Transistor, 7.4A I(D), 100V, 0.0205ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
|
Mfr.#: BSC20N025S OMO.#: OMO-BSC20N025S-1190 |
ブランドニューオリジナル |
|
|
Mfr.#: BSC205N10LS G |
IGBT Transistors MOSFET N-Ch 100V 7.4A TDSON-8 |