CSD17306Q5A

Mfr. #:: CSD17306Q5A
説明:: Trans MOSFET N-CH 30V 24A 8-Pin VSONP EP T/R
ライフサイクル:: メーカー新製品
データシート:: CSD17306Q5A データシート
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詳しくは:: CSD17306Q5A 詳しくは CSD17306Q5A Product Details

製品属性
属性値

メーカー: TI

製品カテゴリ: FET-シングル

シリーズ: CSD17306Q5A

包装: リール

取り付けスタイル: SMD / SMT

商標名: NexFET

パッケージ-ケース: VSON-FET-8

テクノロジー: Si

チャネル数: 1 Channel

構成: 独身

トランジスタタイプ: 1 N-Channel

Pd-電力損失: 3.2 W

最高作動温度: + 150 C

最低作動温度: - 55 C

Vgs-Gate-Source-Voltage: 10 V

Id-連続-ドレイン-電流: 24 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 30 V

Vgs-th-Gate-Source-Threshold-Voltage: 1.1 V

Rds-On-Drain-Source-Resistance: 4.2 mOhms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 18.4 ns

典型的なターンオン遅延時間: 7.8 ns

Qg-Gate-Charge: 11.8 nC

フォワード-相互コンダクタンス-最小: 105 S

Tags: CSD17306, CSD1730, CSD173, CSD17, CSD1, CSD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CSD17306Q5A 説明

***as Instruments: 30V, N ch NexFET MOSFET™, single SON5x6, 4.2mOhm 8-VSONP -55 to 150

***ical: Trans MOSFET N-CH 30V 24A 8-Pin VSONP EP T/R

***p One Stop Global: Trans MOSFET N-CH 30V 24A 8-Pin SON EP T/R

***N: MOSFET 30V N Channel NexFET Power MOSFET

***Components: MOSFET N-CHANNEL 30V 24A NEXFET SON8EP

*** Source Electronics: MOSFET N-CH 30V 100A 8SON

***th Star Micro: the nexfet power mosfet has been designed to minimize losses in power conversion applications and optimized for 5v gate drive applications.

***ark: Mosfet, N Ch, 30V, 100A, 8Son; Transistor Polarity:n Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.0029Ohm; Rds(On) Test Voltage Vgs:8V; Threshold Voltage Vgs:1.1V; Power Dissipationrohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, N CH, 30V, 100A, 8SON; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0029ohm; Rds(on) Test Voltage Vgs:8V; Threshold Voltage Vgs:1.1V; Power Dissipation Pd:3.2W; Transistor Case Style:SON; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Id Max:100A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:10V

***nell: MOSFET, CANALE N, 30V, 100A, 8SON; Polarità Transistor:Canale N; Corrente Continua di Drain Id:100A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):0.0029ohm; Tensione Vgs di Misura Rds(on):8V; Tensione di Soglia Vgs:1.1V; Dissipazione di Potenza Pd:3.2W; Modello Case Transistor:SON; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Corrente Id Max:100A; Intervallo Temperatura di Esercizio:Da -55°C a +150°C; Temperatura di Esercizio Min:-55°C; Tensione Vgs Max:10V

CSD17306Q5A 詳しくは

NexFET N-Channel Power MOSFETs: OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.

TI N-Channel 8-23-12

NexFET™ Power MOSFETs: OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Market price

モデル	説明	ストック	価格
CSD17306Q5A DISTI # V98:2334_07248759	Trans MOSFET N-CH 30V 24A 8-Pin VSONP EP T/R RoHS: Compliant	103	100:$0.7967 25:$1.0186 10:$1.0198 1:$1.1745
CSD17306Q5A DISTI # 296-25856-1-ND	MOSFET N-CH 30V 100A 8SON RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	12962In Stock	1000:$0.6543 500:$0.8288 100:$1.0687 10:$1.3520 1:$1.5300
CSD17306Q5A DISTI # 296-25856-6-ND	MOSFET N-CH 30V 100A 8SON RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	12962In Stock	1000:$0.6543 500:$0.8288 100:$1.0687 10:$1.3520 1:$1.5300
CSD17306Q5A DISTI # 296-25856-2-ND	MOSFET N-CH 30V 100A 8SON RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	10000In Stock	5000:$0.5633 2500:$0.5929
CSD17306Q5A DISTI # 25824762	Trans MOSFET N-CH 30V 24A 8-Pin VSONP EP T/R RoHS: Compliant	103	100:$0.7967 25:$1.0186 13:$1.0198
CSD17306Q5A DISTI # CSD17306Q5A	Trans MOSFET N-CH 30V 24A 8-Pin SON EP T/R - Tape and Reel (Alt: CSD17306Q5A) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.5579 5000:$0.5309 10000:$0.5139 15000:$0.4959 25000:$0.4829
CSD17306Q5A DISTI # CSD17306Q5A	Trans MOSFET N-CH 30V 24A 8-Pin SON EP T/R (Alt: CSD17306Q5A) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0
CSD17306Q5A	30V N Channel NexFET&#153,Power MOSFET	6955	1000:$0.4400 750:$0.4900 500:$0.6100 250:$0.7500 100:$0.8100 25:$0.9500 10:$1.0300 1:$1.1500
CSD17306Q5A DISTI # 595-CSD17306Q5A	MOSFET 30V N Channel NexFET Power MOSFET RoHS: Compliant	14812	1:$1.2600 10:$1.0800 100:$0.8280 500:$0.7320 1000:$0.5780 2500:$0.5130 10000:$0.4930
CSD17306Q5A	Power Field-Effect Transistor, 100A I(D), 30V, 0.0054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	4881	1000:$0.5700 500:$0.6000 100:$0.6300 25:$0.6600 1:$0.7100
CSD17306Q5A DISTI # 8274824P	MOSFET N-CHANNEL 30V 24A NEXFET SON8EP, RL	685	50:£0.7820 100:£0.5980 250:£0.5640 500:£0.5300
CSD17306Q5A DISTI # 1823846	MOSFET, N CH, 30V, 100A, 8SON RoHS: Compliant	2628	5:£0.8850 25:£0.7970 100:£0.6110 250:£0.5760 500:£0.5400
CSD17306Q5A DISTI # 1823846	MOSFET, N CH, 30V, 100A, 8SON RoHS: Compliant	2559	1:$2.0000 10:$1.7200 100:$1.3200 500:$1.1600 1000:$0.9150 2500:$0.8120 10000:$0.7810
CSD17306Q5A DISTI # C1S746201489902	Trans MOSFET N-CH 30V 24A 8-Pin VSONP EP T/R RoHS: Compliant	103	100:$0.7967 25:$1.0186 10:$1.0198

画像	モデル	説明
	Mfr.#: CSD17585F5 OMO.#: OMO-CSD17585F5	MOSFET 30V, N ch NexFET MOSFETG , single LGA 0.8x1.5, 33mOhm 3-PICOSTAR -55 to 150
	Mfr.#: CSD17581Q3A OMO.#: OMO-CSD17581Q3A	MOSFET 30V, N ch NexFET MOSFETG , single SON3x3, 4.7mOhm 8-VSONP -55 to 150
	Mfr.#: CSD17559Q5 OMO.#: OMO-CSD17559Q5	MOSFET 30V N Ch NexFET Pwr MOSFET
	Mfr.#: CSD17484F4 OMO.#: OMO-CSD17484F4	MOSFET 30V, N ch NexFET MOSFETG , single LGA 1.0x0.6mm, 128mOhm 3-PICOSTAR -55 to 150
	Mfr.#: CSD17307Q5A OMO.#: OMO-CSD17307Q5A	MOSFET 30V N Channel NexFET Power MOSFET
	Mfr.#: CSD17306Q5A///////////// OMO.#: OMO-CSD17306Q5A--TEXAS-INSTRUMENTS	ブランドニューオリジナル
	Mfr.#: CSD17308Q3T OMO.#: OMO-CSD17308Q3T-TEXAS-INSTRUMENTS	MOSFET N-CH 30V 50A
	Mfr.#: CSD17578Q5A OMO.#: OMO-CSD17578Q5A-TEXAS-INSTRUMENTS	RF Bipolar Transistors MOSFET 30V N-Chan NexFET? Power MOSFET 8-VSONP
	Mfr.#: CSD17555Q5A OMO.#: OMO-CSD17555Q5A-TEXAS-INSTRUMENTS	MOSFET N-CH 30V 100A 8SON
	Mfr.#: CSD17576Q5B OMO.#: OMO-CSD17576Q5B-TEXAS-INSTRUMENTS	MOSFET N-CH 30V 100A 8VSON

CSD17306Q5A

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes