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BSZ100N06LS3

BSZ100N06LS3
Mfr. #:
BSZ100N06LS3
メーカー:
Infineon Technologies
説明:
ライフサイクル:
メーカー新製品
データシート:
BSZ100N06LS3 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
製品属性
属性値
メーカー
インフィニオンテクノロジーズ
製品カテゴリ
FET-シングル
シリーズ
OptiMOS
包装
Digi-ReelR代替パッケージ
パーツエイリアス
BSZ100N06LS3GATMA1 BSZ100N06LS3GXT SP000453672
取り付けスタイル
SMD / SMT
商標名
OptiMOS
パッケージ-ケース
8-PowerVDFN
テクノロジー
Si
作動温度
-55°C ~ 150°C (TJ)
取付タイプ
表面実装
チャネル数
1 Channel
サプライヤー-デバイス-パッケージ
PG-TSDSON-8 (3.3x3.3)
構成
シングルクワッドドレイントリプルソース
FETタイプ
MOSFET Nチャネル、金属酸化物
パワーマックス
50W
トランジスタタイプ
1 N-Channel
Drain-to-Source-Voltage-Vdss
60V
入力-静電容量-Ciss-Vds
3500pF @ 30V
FET機能
ロジックレベルゲート
Current-Continuous-Drain-Id-25°C
11A (Ta), 20A (Tc)
Rds-On-Max-Id-Vgs
10 mOhm @ 20A, 10V
Vgs-th-Max-Id
2.2V @ 23μA
ゲートチャージ-Qg-Vgs
45nC @ 10V
Pd-電力損失
2.1 W
最高作動温度
+ 150 C
最低作動温度
- 55 C
立ち下がり時間
8 ns
立ち上がり時間
58 ns
Vgs-Gate-Source-Voltage
20 V
Id-連続-ドレイン-電流
20 A
Vds-ドレイン-ソース-ブレークダウン-電圧
60 V
Rds-On-Drain-Source-Resistance
10 mOhms
トランジスタ-極性
Nチャネル
典型的なターンオフ遅延時間
19 ns
典型的なターンオン遅延時間
8 ns
チャネルモード
強化
Tags
BSZ100N06LS, BSZ100N06L, BSZ100N06, BSZ100, BSZ10, BSZ1, BSZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
モデル メーカー 説明 ストック 価格
BSZ100N06LS3GATMA1
DISTI # V72:2272_06384814		Infineon Technologies AGTrans MOSFET N-CH 60V 11A 8-Pin TSDSON EP T/R
RoHS: Compliant		1722
  • 3000:$0.3721
  • 1000:$0.3758
  • 500:$0.4625
  • 250:$0.5169
  • 100:$0.5225
  • 25:$0.6506
  • 10:$0.6584
  • 1:$0.7557
BSZ100N06LS3GATMA1
DISTI # BSZ100N06LS3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 60V 20A TSDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		30115In Stock
  • 1000:$0.4675
  • 500:$0.5922
  • 100:$0.7636
  • 10:$0.9660
  • 1:$1.0900
BSZ100N06LS3GATMA1
DISTI # BSZ100N06LS3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 60V 20A TSDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		30115In Stock
  • 1000:$0.4675
  • 500:$0.5922
  • 100:$0.7636
  • 10:$0.9660
  • 1:$1.0900
BSZ100N06LS3GATMA1
DISTI # BSZ100N06LS3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 60V 20A TSDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		25000In Stock
  • 5000:$0.4025
BSZ100N06LS3GATMA1
DISTI # 31078933		Infineon Technologies AGTrans MOSFET N-CH 60V 11A 8-Pin TSDSON EP T/R
RoHS: Compliant		15000
  • 10000:$0.3626
  • 5000:$0.3759
BSZ100N06LS3GATMA1
DISTI # 31338070		Infineon Technologies AGTrans MOSFET N-CH 60V 11A 8-Pin TSDSON EP T/R
RoHS: Compliant		5000
  • 5000:$0.5320
BSZ100N06LS3GATMA1
DISTI # 31066196		Infineon Technologies AGTrans MOSFET N-CH 60V 11A 8-Pin TSDSON EP T/R
RoHS: Compliant		5000
  • 5000:$0.4039
BSZ100N06LS3GATMA1
DISTI # 31433908		Infineon Technologies AGTrans MOSFET N-CH 60V 11A 8-Pin TSDSON EP T/R
RoHS: Compliant		1733
  • 17:$0.7557
BSZ100N06LS3 G
DISTI # 31073348		Infineon Technologies AGBSZ100N06LS3 G
RoHS: Compliant		270
  • 200:$0.5355
  • 100:$0.5534
  • 50:$0.6337
  • 22:$0.9422
BSZ100N06LS3G
DISTI # BSZ100N06LS3 G		Infineon Technologies AGTrans MOSFET N-CH 60V 11A 8-Pin TSDSON T/R (Alt: BSZ100N06LS3 G)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Asia - 0
  • 5000:$0.3930
  • 10000:$0.3821
  • 15000:$0.3718
  • 25000:$0.3620
  • 50000:$0.3573
  • 125000:$0.3527
  • 250000:$0.3482
BSZ100N06LS3G
DISTI # SP000453672		Infineon Technologies AGTrans MOSFET N-CH 60V 11A 8-Pin TSDSON T/R (Alt: SP000453672)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Europe - 0
  • 5000:€0.5899
  • 10000:€0.5009
  • 20000:€0.4459
  • 30000:€0.4009
  • 50000:€0.3719
BSZ100N06LS3GXT
DISTI # BSZ100N06LS3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 60V 11A 8-Pin TSDSON EP T/R - Tape and Reel (Alt: BSZ100N06LS3GATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.3939
  • 10000:$0.3929
  • 20000:$0.3919
  • 30000:$0.3909
  • 50000:$0.3899
BSZ100N06LS3GATMA1.
DISTI # 25AC6456		Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:20A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.008ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V,Power Dissipation Pd:50W,No. of Pins:8Pins RoHS Compliant: Yes0
  • 1:$0.3580
  • 10000:$0.3570
  • 20000:$0.3560
  • 30000:$0.3550
BSZ100N06LS3GATMA1
DISTI # 47W3363		Infineon Technologies AGMOSFET, N CHANNEL, 60V, 20A, 8TSDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:20A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.008ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V RoHS Compliant: Yes1800
  • 1:$0.9100
  • 10:$0.7710
  • 100:$0.5920
  • 500:$0.5230
  • 1000:$0.4130
BSZ100N06LS3GATMA1Infineon Technologies AGSingle N-Channel 60 V 10 mOhm 34 nC OptiMOS Power Mosfet - TSDSON-8
RoHS: Not Compliant		10000Reel
  • 5000:$0.3800
BSZ100N06LS3GATMA1
DISTI # 726-BSZ100N06LS3GATM		Infineon Technologies AGMOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3
RoHS: Compliant		364
  • 1:$0.9100
  • 10:$0.7710
  • 100:$0.5920
  • 500:$0.5230
  • 1000:$0.4130
  • 5000:$0.3660
BSZ100N06LS3 G
DISTI # 726-BSZ100N06LS3G		Infineon Technologies AGMOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3
RoHS: Compliant		347
  • 1:$0.9100
  • 10:$0.7710
  • 100:$0.5920
  • 500:$0.5230
  • 1000:$0.4130
  • 5000:$0.3660
BSZ100N06LS3GATMA1
DISTI # 7528255		Infineon Technologies AGMOSFET N-CHANNEL 60V 11A TSDSON8, PK275
  • 5:£0.6420
  • 50:£0.5120
  • 250:£0.3920
  • 1250:£0.2880
  • 2500:£0.2800
BSZ100N06LS3 GInfineon Technologies AG 295
    BSZ100N06LS3 G
    DISTI # C1S322000698008    		Infineon Technologies AGMOSFETs
    RoHS: Compliant    		270
    • 200:$0.4200
    • 100:$0.4340
    • 50:$0.4970
    • 10:$0.7390
    • 5:$0.9120
    BSZ100N06LS3GATMA1
    DISTI # C1S322000721254    		Infineon Technologies AGMOSFETs
    RoHS: Compliant    		15000
    • 10000:$0.3626
    • 5000:$0.3759
    BSZ100N06LS3GATMA1
    DISTI # C1S322000463253    		Infineon Technologies AGTrans MOSFET N-CH 60V 11A 8-Pin TSDSON EP T/R
    RoHS: Compliant    		1733
    • 250:$0.5158
    • 100:$0.5214
    • 25:$0.6491
    • 10:$0.6569
    BSZ100N06LS3GATMA1
    DISTI # C1S322000408964    		Infineon Technologies AGTrans MOSFET N-CH 60V 11A 8-Pin TSDSON EP T/R
    RoHS: Compliant    		5000
    • 5000:$0.4130
    BSZ100N06LS3GATMA1
    DISTI # 2212836    		Infineon Technologies AGMOSFET, N-CH, 60V, 20A, 8TSDSON
    RoHS: Compliant    		1800
    • 1:$1.4400
    • 10:$1.2200
    • 100:$0.9370
    • 500:$0.8280
    • 1000:$0.6540
    • 5000:$0.5800
    BSZ100N06LS3 GInfineon Technologies AGRoHS(ship within 1day)240
    • 1:$1.4300
    • 10:$1.0700
    • 50:$0.8900
    • 100:$0.7100
    • 500:$0.6100
    • 1000:$0.5700
    BSZ100N06LS3GATMA1
    DISTI # 2212836    		Infineon Technologies AGMOSFET, N-CH, 60V, 20A, 8TSDSON
    RoHS: Compliant    		2850
    • 5:£0.6550
    • 25:£0.5220
    • 100:£0.4570
    • 250:£0.4000
    • 500:£0.3430
    画像 モデル 説明
    BSZ100N03MSGATMA1

    Mfr.#: BSZ100N03MSGATMA1

    OMO.#: OMO-BSZ100N03MSGATMA1

    		 MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M
    BSZ100N03MS G

    Mfr.#: BSZ100N03MS G

    OMO.#: OMO-BSZ100N03MS-G

    		 MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M
    BSZ100N06NSATMA1

    Mfr.#: BSZ100N06NSATMA1

    OMO.#: OMO-BSZ100N06NSATMA1

    		 MOSFET MV POWER MOS
    BSZ100N03LS G

    Mfr.#: BSZ100N03LS G

    OMO.#: OMO-BSZ100N03LS-G

    		 MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3
    BSZ100N03

    Mfr.#: BSZ100N03

    OMO.#: OMO-BSZ100N03-1190

    		 ブランドニューオリジナル
    BSZ100N03LSG

    Mfr.#: BSZ100N03LSG

    OMO.#: OMO-BSZ100N03LSG-1190

    		 Power Field-Effect Transistor, 12A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    BSZ100N03MS G

    Mfr.#: BSZ100N03MS G

    OMO.#: OMO-BSZ100N03MS-G-1190

    		 Trans MOSFET N-CH 30V 10A 8-Pin TSDSON T/R (Alt: BSZ100N03MS G)
    BSZ100N03MSGATMA1

    Mfr.#: BSZ100N03MSGATMA1

    OMO.#: OMO-BSZ100N03MSGATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 30V 40A TDSON-8
    BSZ100N06LS3GATMA

    Mfr.#: BSZ100N06LS3GATMA

    OMO.#: OMO-BSZ100N06LS3GATMA-1190

    		 ブランドニューオリジナル
    BSZ100N03LSGATMA1-CUT TAPE

    Mfr.#: BSZ100N03LSGATMA1-CUT TAPE

    OMO.#: OMO-BSZ100N03LSGATMA1-CUT-TAPE-1190

    		 ブランドニューオリジナル
    可用性
    ストック:
    Available
    注文中:
    5500
    数量を入力してください:
    BSZ100N06LS3の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
    参考価格（USD）
    量
    単価
    小計金額
    1
    $0.00
    $0.00
    10
    $0.00
    $0.00
    100
    $0.00
    $0.00
    500
    $0.00
    $0.00
    1000
    $0.00
    $0.00
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