BFP840ESDH6327XTSA1

Mfr. #:: BFP840ESDH6327XTSA1
メーカー:: Infineon Technologies
説明:: RF Bipolar Transistors RF BIP TRANSISTORS
ライフサイクル:: メーカー新製品
データシート:: BFP840ESDH6327XTSA1 データシート
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詳しくは:: BFP840ESDH6327XTSA1 詳しくは

製品属性
属性値

メーカー：: インフィニオン

製品カテゴリ：: RFバイポーラトランジスタ

JBoss：: Y

シリーズ：: BFP840

トランジスタタイプ：: バイポーラ

テクノロジー：: SiGe

コレクター-エミッター電圧VCEOMax：: 2.25 V

エミッタ-ベース電圧VEBO：: 2.9 V

連続コレクタ電流：: 35 mA

最低動作温度：: - 55 C

最高作動温度：: + 150 C

構成：: 独身

取り付けスタイル：: SMD / SMT

パッケージ/ケース：: SOT-343-4

包装：: リール

動作周波数：: 80 GHz

タイプ：: RFシリコンゲルマニウム

ブランド：: インフィニオンテクノロジーズ

Pd-消費電力：: 75 mW

製品タイプ：: RFバイポーラトランジスタ

ファクトリーパックの数量：: 3000

サブカテゴリ：: トランジスタ

パーツ番号エイリアス：: 840ESD BFP BFP84ESDH6327XT H6327 SP000943010

単位重量：: 0.000226 oz

Tags: BFP840ESDH, BFP840E, BFP840, BFP84, BFP8, BFP

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BFP840ESDH6327XTSA1 説明

***ical: Trans RF BJT NPN 2.25V 0.035A 75mW Automotive 4-Pin(3+Tab) SOT-343 T/R

***ure Electronics: BFP840ESD: 2.25 V 35mA Robust Low Noise Silicon Germanium Bipolar RF Transistor

***ark: RF TRANSISTOR, NPN, 2.25V, 80GHZ, SOT343

***ment14 APAC: RF Transistor, NPN, 2.25V, 80GHZ, SOT343; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:2.25V; Transition Frequency ft:80GHz; Power

***ineon SCT: The BFx840xESD product family is a series of discrete hetero-junction bipolar transistors (HBT) specifically designed for high performance 5 GHz band low noise amplifier (LNA) solutions for Wi-Fi connectivity applications, SOT343, RoHS

***nell: RF TRANSISTOR, NPN, 2.25V, 80GHZ, SOT343; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 2.25V; Transition Frequency ft: 80GHz; Power Dissipation Pd: 75mW; DC Collector Current: 35mA; DC Current Gain hFE: 150hFE; RF Transistor Case: SOT-343; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: The BFx840xESD product family is a series of discrete hetero-junction bipolar transistors (HBT) specifically designed for high performance 5 GHz band low noise amplifier (LNA) solutions for Wi-Fi connectivity applications. | Summary of Features: Best-in-class RF performance; High transition frequency f T = 80 GHz; Achieves highest gain (18dB) and best-in-class noise figure level (0.95dB) with only 8 external passives; Low voltage supply capability e.g. VCC = 1.2 V and 1.8 V; 1.5 kV HBM ESD hardness; High maximum RF input power; Low power consumption, ideal for mobile applications; Available in standard, flat lead and ultra low height packages; Inherently matched in the 5 GHz band | Benefits: Abundant Distribution channels and sales offices worldwide; Circuit layout/design support; Modelling competence: SPICE models and Microwave Office / ADS design kits | Target Applications: 5-6 GHz low noise amplifier (LNA); Wi-Fi 802.11 a/n/ac standards; Wi-Fi access point (AP); Routers; Wi-Fi modules

***ical: Trans RF BJT NPN 4.5V 0.012A 54mW 4-Pin(3+Tab) CMPAK T/R

***ure Electronics: BFG410W Series 4.5 V 54 mW 22 GHz SMT NPN Wideband Transistor - SOT343R

***ment14 APAC: TRANSISTOR, RF, NPN, 4.5V, 22GHZ, SOT343

***nell: TRANSISTOR, RF, NPN, 4.5V, 22GHZ, SOT343; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 4.5V; Transition Frequency ft: 22GHz; Power Dissipation Pd: 54mW; DC Collector Current: 12mA; DC Current Gain hFE: 80hFE; RF Transistor Case: SOT-343R; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: BFG410W Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***et: Trans GP BJT NPN 6V 0.01A 4-Pin(3+Tab) CMPAK T/R

***ponent Stockers USA: L BAND Si NPN RF SMALL SIGNAL TRANSISTOR

***i-Key: TRANS NPN 6V 10MA 14GHZ SOT343R

***el Electronic: IC REG CONV CAR AUD 6OUT 15HZIPJ

***ca Corp: RF Small Signal Bipolar Transistor, 0.07A I(C), 1-Element, Silicon Germanium, NPN

***ical: Trans RF BJT NPN 2.8V 0.07A 220mW 4-Pin(3+Tab) DFP T/R

***enic: 2.8V 220mW 25mA 330@10mA,2V 45GHz NPN +150¡æ@(Tj) SOT-343F Bipolar Transistors - BJT ROHS

***ure Electronics: BFU760 Series 2.8 V 25.5 dB Gain NPN Silicon Germanium RF Transistor-SOT-343F-4

*** Semiconductors SCT: NPN Wideband Silicon Germanium RF Transistor, DFP4, RoHS

***ment14 APAC: RF Transistor, NPN, 2.8V, 45GHZ, SOT343F; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:2.8V; Transition Frequency ft:45GHz; Power

***nell: RF TRANSISTOR, NPN, 2.8V, 45GHZ, SOT343F; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 2.8V; Transition Frequency ft: 45GHz; Power Dissipation Pd: 220mW; DC Collector Current: 70mA; DC Current Gain hFE: 155hFE; RF Transistor Case: SOT-343F; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***ca Corp: RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Silicon Germanium, NPN

***ure Electronics: BFU790 Series 2.8 V 19.5 dB Gain NPN Silicon Germanium RF Transistor-SOT-343F-4

***et: Trans GP BJT NPN 2.8V 0.1A 4-Pin(3+Tab) DFP T/R

***el Electronic: RF Bipolar Transistors NPN WIDEBAND SILICON GERMANIUM RF TRANS

*** Semiconductors SCT: NPN wideband silicon germanium RF transistor, DFP4, RoHS

***ment14 APAC: RF TRANSISTOR, NPN, 2.8V, 25GHZ, SOT343F

***nell: RF TRANSISTOR, NPN, 2.8V, 25GHZ, SOT343F; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 2.8V; Transition Frequency ft: 25GHz; Power Dissipation Pd: 234mW; DC Collector Current: 100mA; DC Current Gain hFE: 235hFE; RF Transistor Case: SOT-343F; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***ical: Trans RF BJT NPN 2.8V 0.01A 136mW 4-Pin(3+Tab) DFP T/R

***ure Electronics: BFU710 Series NPN 5.5 V 10 mA Silicon Germanium RF Transistor - SOT-343F-4

*** Semiconductors SCT: NPN Wideband Silicon Germanium RF Transistor, DFP4, RoHS

***ment14 APAC: RF Transistor, NPN, 2.8V, 43GHZ, SOT343F; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:2.8V; Transition Frequency ft:43GHz; Power

***nell: RF TRANSISTOR, NPN, 2.8V, 43GHZ, SOT343F; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 2.8V; Transition Frequency ft: 43GHz; Power Dissipation Pd: 136mW; DC Collector Current: 2mA; DC Current Gain hFE: 200hFE; RF Transistor Case: SOT-343F; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***ical: Trans RF BJT NPN 15V 0.07A 500mW 4-Pin SO T/R

***nell: RF WIDEBAND TRANSISTOR, NPN, 15V, 9GHZ, 4-SOT-343N

***ark: RF Bipolar Transistor; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:15V; Transition Frequency Typ, ft:9GHz; Power Dissipation, Pd:500mW; DC Collector Current:70mA; DC Current Gain Max (hfe):120 ;RoHS Compliant: Yes

BFP840ESDH6327XTSA1 詳しくは

RF Transistors: Infineon RF Transistors include Low Noise Amplifiers and High Linearity Transistors. Devices in the Low Noise category are based on silicon bipolar technology. Moderate transition frequency of fT <20 GHz provides ease of use and stability. Breakdown voltage can safely support supply voltage of 5V. These transistors are suitable for use with AM over VHF/UHF up to 14 GHz. High Linearity Transistors provide OIP3 (Output 3rd Order Intercept Point) above 29 dBm. They are based on Infineon's high volume silicon bipolar and SiGe:C technologies for best in class noise figures. These devices are ideal for drivers, pre-amplifiers, and buffer amplifiers.

BFPx4 RF Transistors: Infineon's BFPx4 RF Transistors provide the designer the best possible performance, superior flexibility and price/performance ratio. These are widely used for new emerging wireless applications, where the system specification is not yet firmly established. The BFxx Low Noise Amplifiers (LNAs) include devices suitable for use from AM over VHF/UHF up to 14GHz. These are the latest LNA innovations based on Infineon’s reliable high volume 80GHz fT silicon germanium carbon (SiGe:C) heterojunction bipolar technology. They combine uncompromised RF performance with outstanding robustness against high RF input power overdrive and Electrostatic Discharge (ESD). The BGS12SL6 RF MOS Switch is a general purpose 0.1 - 6.0GHz SPDT switch suitable for band/mode switching in cellular systems and WLAN applications. The ESD112B1 TVS ESD/Transient Protection Diode is a bi-directional, ultra-low capacitance ESD/Transient protection diode designed for the protection of RF signal lines.Learn More

RF Solutions: Infineon RF Solutions provide RF products for numerous applications with high-performance, cost-effective devices. RF solutions include transistors, low-noise amplifiers, GPS/GLONASS/COMPASS LNA, switches, modules and tuners.

Market price

モデル	メーカー	説明	ストック	価格
BFP840ESDH6327XTSA1 DISTI # V72:2272_06391072	Infineon Technologies AG	Trans RF BJT NPN 2.25V 0.035A Automotive 4-Pin(3+Tab) SOT-343 T/R RoHS: Compliant	1985	1000:$0.1659 500:$0.1719 250:$0.1911 100:$0.2124 25:$0.3081 10:$0.3424 1:$0.3901
BFP840ESDH6327XTSA1 DISTI # V36:1790_06391072	Infineon Technologies AG	Trans RF BJT NPN 2.25V 0.035A Automotive 4-Pin(3+Tab) SOT-343 T/R RoHS: Compliant	0
BFP840ESDH6327XTSA1 DISTI # BFP840ESDH6327XTSA1CT-ND	Infineon Technologies AG	RF TRANS NPN 2.25V 80GHZ SOT343 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2022In Stock	1000:$0.1854 500:$0.2400 100:$0.3054 10:$0.4090 1:$0.4800
BFP840ESDH6327XTSA1 DISTI # BFP840ESDH6327XTSA1DKR-ND	Infineon Technologies AG	RF TRANS NPN 2.25V 80GHZ SOT343 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2022In Stock	1000:$0.1854 500:$0.2400 100:$0.3054 10:$0.4090 1:$0.4800
BFP840ESDH6327XTSA1 DISTI # BFP840ESDH6327XTSA1TR-ND	Infineon Technologies AG	RF TRANS NPN 2.25V 80GHZ SOT343 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	75000:$0.1324 30000:$0.1356 15000:$0.1430 6000:$0.1536 3000:$0.1641
BFP840ESDH6327XTSA1 DISTI # 32628689	Infineon Technologies AG	Trans RF BJT NPN 2.25V 0.035A Automotive 4-Pin(3+Tab) SOT-343 T/R RoHS: Compliant	354000	3000:$0.1783
BFP840ESDH6327XTSA1 DISTI # 32628487	Infineon Technologies AG	Trans RF BJT NPN 2.25V 0.035A Automotive 4-Pin(3+Tab) SOT-343 T/R RoHS: Compliant	99000	3000:$0.1783
BFP840ESDH6327XTSA1 DISTI # 26195744	Infineon Technologies AG	Trans RF BJT NPN 2.25V 0.035A Automotive 4-Pin(3+Tab) SOT-343 T/R RoHS: Compliant	1985	1000:$0.1817 500:$0.1848 250:$0.2054 100:$0.2283 48:$0.3011
BFP840ESDH6327XTSA1 DISTI # BFP840ESDH6327XTSA1	Infineon Technologies AG	Trans GP BJT NPN 2.25V 0.035A 4-Pin SOT-343 T/R - Tape and Reel (Alt: BFP840ESDH6327XTSA1) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 237000	30000:$0.1307 18000:$0.1341 12000:$0.1375 6000:$0.1412 3000:$0.1451
BFP840ESDH6327XTSA1 DISTI # BFP 840ESD H6327	Infineon Technologies AG	Trans GP BJT NPN 2.25V 0.035A 4-Pin SOT-343 T/R (Alt: BFP 840ESD H6327) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 6000	6000:$0.1059 3000:$0.1060
BFP840ESDH6327XTSA1 DISTI # BFP840ESDH6327XTSA1	Infineon Technologies AG	Trans GP BJT NPN 2.25V 0.035A 4-Pin SOT-343 T/R - Bulk (Alt: BFP840ESDH6327XTSA1) RoHS: Compliant Min Qty: 2273 Container: Bulk	Americas - 0	22730:$0.1389 11365:$0.1419 6819:$0.1469 4546:$0.1519 2273:$0.1579
BFP840ESDH6327XTSA1 DISTI # SP000943010	Infineon Technologies AG	Trans GP BJT NPN 2.25V 0.035A 4-Pin SOT-343 T/R (Alt: SP000943010) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.1399 18000:€0.1509 12000:€0.1779 6000:€0.2179 3000:€0.2799
BFP840ESDH6327XTSA1 DISTI # 50Y1760	Infineon Technologies AG	Bipolar - RF Transistor, NPN, 2.25 V, 80 GHz, 75 mW, 35 mA, 150 RoHS Compliant: Yes	0	1000:$0.1990 500:$0.2170 250:$0.2330 100:$0.2500 50:$0.2980 25:$0.3440 10:$0.3920 1:$0.4750
BFP840ESDH6327XTSA1 DISTI # 726-BFP840ESDH6327XT	Infineon Technologies AG	RF Bipolar Transistors RF BIP TRANSISTORS RoHS: Compliant	4544	1:$0.4600 10:$0.3830 100:$0.2340 1000:$0.1810 3000:$0.1540
BFP 840ESD H6327 DISTI # 726-BFP840ESDH6327	Infineon Technologies AG	RF Bipolar Transistors RF BIP TRANSISTORS RoHS: Compliant	2144	1:$0.4600 10:$0.3830 100:$0.2340 1000:$0.1810 3000:$0.1540
BFP840ESDH6327XTSA1	Infineon Technologies AG	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, C Band, Silicon, NPN RoHS: Compliant	130989	500:$0.1500 1000:$0.1500 100:$0.1600 25:$0.1700 1:$0.1800
BFP840ESDH6327XTSA1 DISTI # 8268992P	Infineon Technologies AG	LOW NOISE SIGE RF TRANSISTOR NPN SOT343, RL	400	6000:£0.1270 3000:£0.1300 2000:£0.1340 1000:£0.1370
BFP840ESDH6327XTSA1 DISTI # 8268992	Infineon Technologies AG	LOW NOISE SIGE RF TRANSISTOR NPN SOT343, PK	250	6000:£0.1270 3000:£0.1300 2000:£0.1340 1000:£0.1370 50:£0.2940
BFP840ESDH6327XTSA1 DISTI # 2480675RL	Infineon Technologies AG	RF TRANSISTOR, NPN, 2.25V, 80GHZ, SOT343 RoHS: Compliant	0	100:$0.3610 10:$0.5890 1:$0.7070
BFP840ESDH6327XTSA1 DISTI # 2480675	Infineon Technologies AG	RF TRANSISTOR, NPN, 2.25V, 80GHZ, SOT343 RoHS: Compliant	993	100:$0.3610 10:$0.5890 1:$0.7070
BFP840ESDH6327XTSA1 DISTI # 2480675	Infineon Technologies AG	RF TRANSISTOR, NPN, 2.25V, 80GHZ, SOT343	1037	500:£0.1440 250:£0.1570 100:£0.1690 25:£0.2980 5:£0.3310

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BFP840ESDH6327XTSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes