2SK2838(Q)

Mfr. #:: 2SK2838(Q)
メーカー:: Toshiba America Electronic Components
説明:: Trans MOSFET N-CH Si 400V 5.5A 3-Pin(3+Tab) TO-220
ライフサイクル:: メーカー新製品
データシート:: 2SK2838(Q) データシート
配達:: DHL FedEx Ups TNT EMS
支払い:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

製品属性
属性値

Tags: 2SK283, 2SK28, 2SK2, 2SK

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

2SK2838(Q) 説明

***p One Stop Global: Trans MOSFET N-CH Si 400V 5.5A 3-Pin(3+Tab) TO-220

***icroelectronics: N-Channel 400V - 0.85 Ohm - 5.4A TO-220 Zener-Protected SuperMESH(TM) POWER MOSFET

***va Crawler: N-channel 400 V, 0.85 Ohm typ., 5.4 A SuperMESH POWER Mosfet in TO-220 package

***ical: Trans MOSFET N-CH 400V 5.4A 3-Pin(3+Tab) TO-220AB Tube

***eco: MOSFET N-Channel 400V 5.4A (Tc) 70W (Tc) Through Hole TO-220AB

***ark: N CHANNEL MOSFET, 400V, 5.4A TO-220; Channel Type:N Channel; Drain Source Voltage Vds:400V; Continuous Drain Current Id:5.4A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; MSL:- RoHS Compliant: Yes

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 5.4A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ponent Stockers USA: 4 A 400 V 1.8 ohm N-CHANNEL Si POWER MOSFET TO-220AB

***r Electronics: Power Field-Effect Transistor, 4A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***nell: MOSFET, N TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 4A; Drain Source Voltage Vds: 400V; On Resistance Rds(on): 1.3ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 7

***ical: Trans MOSFET N-CH 500V 7.1A 3-Pin(3+Tab) TO-220 Tube

***ineon: CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power

***nell: MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 7.1A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.47ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation

***icroelectronics: N-channel 500 V, 0.53 Ohm, 7 A TO-220 MDmesh(TM) II Power MOSFET

***r Electronics: Power Field-Effect Transistor, 7A I(D), 500V, 0.63ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***nell: MOSFET, N CH, 500V, 7A, TO220; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.53ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 70W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015)

***emi: N-Channel Power MOSFET, UniFETTM, 400V, 26A, 160mΩ, TO-220

***et Europe: Trans MOSFET N-CH 400V 26A 3-Pin(3+Tab) TO-220AB Rail

***ure Electronics: N-Channel 400 V 160 mOhm Flange Mount Mosfet - TO-220

***r Electronics: Power Field-Effect Transistor, 26A I(D), 400V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***nell: MOSFET, N CH, 400V, 26A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:26A; Drain Source Voltage Vds:400V; On Resistance Rds(on):0.13ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:265W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)

***rchild Semiconductor: UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

***ark: MOSFET, N CH, 400V, 0.24OHM, 15A, TO-220-3; Transistor Polarity:N Channel; Conti

***emi: N-Channel Power MOSFET, UniFETTM, 400V, 15A, 300mΩ, TO-220

***Yang: Trans MOSFET N-CH 400V 15A 3-Pin(3+Tab) TO-220AB - Rail/Tube

***r Electronics: Power Field-Effect Transistor, 15A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***nell: MOSFET, N CH, 400V, 15A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:400V; On Resistance Rds(on):0.24ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:170W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)

***rchild Semiconductor: UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

Market price

モデル	メーカー	説明	ストック	価格
2SK2838(Q)	Toshiba America Electronic Components		72	36:$1.8920 11:$2.1500 1:$3.4400

画像	モデル	説明
	Mfr.#: 2SK2839(TE16L) OMO.#: OMO-2SK2839-TE16L--1190	N/A (ship within 1day)
	Mfr.#: 2SK2806 OMO.#: OMO-2SK2806-1190	ブランドニューオリジナル
	Mfr.#: 2SK2806-01,2SK2806,K2806 OMO.#: OMO-2SK2806-01-2SK2806-K2806-1190	ブランドニューオリジナル
	Mfr.#: 2SK2824 OMO.#: OMO-2SK2824-1190	ブランドニューオリジナル
	Mfr.#: 2SK2835 OMO.#: OMO-2SK2835-1190	ブランドニューオリジナル
	Mfr.#: 2SK2862 Q OMO.#: OMO-2SK2862-Q-1190	ブランドニューオリジナル
	Mfr.#: 2SK2866 OMO.#: OMO-2SK2866-1190	POWER FIELD-EFFECT TRANSISTOR, 10A I(D), 600V, 0.75OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB
	Mfr.#: 2SK2876,K2876 OMO.#: OMO-2SK2876-K2876-1190	ブランドニューオリジナル
	Mfr.#: 2SK2876-01MR,K2876,2SK28 OMO.#: OMO-2SK2876-01MR-K2876-2SK28-1190	ブランドニューオリジナル
	Mfr.#: 2SK2883(TE24L,Q)-ND OMO.#: OMO-2SK2883-TE24L-Q--ND-1190	ブランドニューオリジナル

2SK2838(Q)

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes