NTMD4184PFR2G

NTMD4184PFR2G
Mfr. #:
NTMD4184PFR2G
メーカー:
ON Semiconductor
説明:
MOSFET PFET FTKY S08 30V TR 3.8A
ライフサイクル:
メーカー新製品
データシート:
NTMD4184PFR2G データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NTMD4184PFR2G DatasheetNTMD4184PFR2G Datasheet (P4-P6)NTMD4184PFR2G Datasheet (P7)
ECAD Model:
製品属性
属性値
メーカー:
オン・セミコンダクター
製品カテゴリ:
MOSFET
JBoss:
Y
テクノロジー:
Si
取り付けスタイル:
SMD / SMT
パッケージ/ケース:
SOIC-8
チャネル数:
1 Channel
トランジスタの極性:
Pチャネル
Vds-ドレイン-ソース間降伏電圧:
30 V
Id-連続ドレイン電流:
4 A
Rds On-ドレイン-ソース抵抗:
95 mOhms
Vgs-ゲート-ソース間電圧:
20 V
最低動作温度:
- 55 C
最高作動温度:
+ 150 C
Pd-消費電力:
2.31 W
構成:
独身
チャネルモード:
強化
包装:
リール
高さ:
1.5 mm
長さ:
5 mm
シリーズ:
NTMD4184PF
トランジスタタイプ:
1 P-Channel
幅:
4 mm
ブランド:
オン・セミコンダクター
立ち下がり時間:
2.8 ns
製品タイプ:
MOSFET
立ち上がり時間:
12 ns
ファクトリーパックの数量:
2500
サブカテゴリ:
MOSFET
典型的なターンオフ遅延時間:
18 ns
典型的なターンオン遅延時間:
7.2 ns
単位重量:
0.006596 oz
Tags
NTMD4184PF, NTMD41, NTMD4, NTMD, NTM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
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***emi
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***nell
MOSFET, P-CH, 30V, 3.3A, 150DEG C, 1.6W; Available until stocks are exhausted
***(Formerly Allied Electronics)
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*** Source Electronics
Trans MOSFET P-CH Si 30V 4.6A 8-Pin SOIC N T/R / MOSFET P-CH 30V 4.6A 8-SOIC
***eco
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***ure Electronics
Single P-Channel 30 V 0.13 Ohm 40 nC HEXFET® Power Mosfet - SOIC-8
***ter Electronics
MOSFET, P-CHANNEL, -30V, -4.6A, 70 MOHM, 27 NC QG, SO-8
***ineon SCT
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 4.6A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
***ark
P CHANNEL MOSFET, -30V, 4.6A, SOIC; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:4.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
***p One Stop Global
Trans MOSFET N/P-CH 30V 3.7A/2.9A 8-Pin SOIC N T/R
***emi
Dual N & P-Channel Enhancement Mode Field Effect Transistor 30V
***r Electronics
Power Field-Effect Transistor, 3.7A I(D), 30V, 0.08ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:3.7A; On Resistance, Rds(on):80mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes
***nell
MOSFET N & P CH 30V 3.7/-2.9A 8SOIC; Transistor Type:MOSFET; Transistor Polarity:N/P ; Voltage, Vds Typ:30V; Current, Id Cont:3.7A; On State Resistance:80mohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.7V; Case Style:SOIC; Termination Type:SMD; Operating Temperature Range:-55°C to +150°C
***rchild Semiconductor
These dual N- and P-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
***p One Stop
Trans MOSFET N/P-CH 30V 6.8A/4.6A 8-Pin SOIC N T/R
***ure Electronics
Dual N/P-Channel 30 V 27/64 mOhm 6.8/8.1 nC HEXFET® Power Mosfet - SOIC-8
***ark
MOSFET, 30V, N+P, 27 m and -64 m , 6.8A and -4.6A, SO-8, TAPE & REEL
***ineon SCT
30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
***ineon
Benefits: RoHS Compliant; Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified MSL1; Dual N and P-Channel MOSFET
***nell
MOSFET, DUAL N & P-CH, 30V, 6.8A, SOIC-8; Transistor Polarity: Dual N and P Channel; Continuous Drain Current Id: 6.8A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.022ohm; Rds(on) Test Voltage Vgs: 10V; Threshold
***emi
Power MOSFET and Schottky Diode, 30 V, 5.7 A, Single N-Channel
***th Star Micro
NTMD4884NF: Small Signal MOSFET 30V 5.7A 70 mOhm Dual N-Channel SO-8 FETKY
***ark
N Channel Mosfet, 30V, 5.7A, Soic, Full Reel
***r Electronics
Small Signal Field-Effect Transistor, 3.3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ure Electronics
Dual N-Channel 30 V 0.04 Ohm 2.3 W Surface Mount Power Mosfet - SOIC-8
***et Europe
Transistor MOSFET Array Dual N-CH 30V 5.8A 8-Pin SOIC T/R
***enic
30V 5.8A 40m´Î@10V5A 2.3W 3V@250Ã×A 2 N-Channel SOIC-8_150mil MOSFETs ROHS
***ark
Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:5.8A; On Resistance Rds(on):0.033ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: No
***ment14 APAC
MOSFET, NN-CH, 30V, 5.8A, SO8; Transistor Polarity:Dual N Channel; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:2.3W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:5.8A; Drain Source Voltage Vds:30V; Module Configuration:Dual; On Resistance Rds(on):33mohm; Power Dissipation Pd:2.3W; Voltage Vgs Max:20V
***(Formerly Allied Electronics)
MOSFET, Power;Dual P-Ch;VDSS -30V;RDS(ON) 0.1Ohm;ID -3.6A;SO-8;PD 2W;VGS +/-20V
***et Europe
Transistor MOSFET Array Dual P-CH 30V 3.6A 8-Pin SOIC T/R
***ure Electronics
Dual P-Channel 30 V 100 mOhm 25 nC HEXFET® Power Mosfet - SOIC-8
*** Stop Electro
Power Field-Effect Transistor, 3.6A I(D), 30V, 0.1ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***nell
MOSFET, DUAL, PP, LOGIC, SO-8; Transistor Polarity: Dual P Channel; Continuous Drain Current Id: 3A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.1ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1V; Po
***ark
Channel Type:dual P Channel; Drain Source Voltage Vds N Channel:-; Drain Source Voltage Vds P Channel:30V; Continuous Drain Current Id N Channel:-; Continuous Drain Current Id P Channel:3.6A; No. Of Pins:8Pins; Product Range:- Rohs Compliant: Yes
モデル メーカー 説明 ストック 価格
NTMD4184PFR2G
DISTI # V36:1790_07296438
ON SemiconductorTrans MOSFET P-CH 30V 4A 8-Pin SOIC N T/R
RoHS: Compliant
0
  • 2500000:$0.1697
  • 1250000:$0.1699
  • 250000:$0.1893
  • 25000:$0.2224
  • 2500:$0.2279
NTMD4184PFR2G
DISTI # V72:2272_07296438
ON SemiconductorTrans MOSFET P-CH 30V 4A 8-Pin SOIC N T/R
RoHS: Compliant
0
    NTMD4184PFR2G
    DISTI # NTMD4184PFR2GOSCT-ND
    ON SemiconductorMOSFET P-CH 30V 2.3A 8-SOIC
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    484In Stock
    • 1000:$0.2574
    • 500:$0.3331
    • 100:$0.4239
    • 10:$0.5680
    • 1:$0.6600
    NTMD4184PFR2G
    DISTI # NTMD4184PFR2GOSDKR-ND
    ON SemiconductorMOSFET P-CH 30V 2.3A 8-SOIC
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    484In Stock
    • 1000:$0.2574
    • 500:$0.3331
    • 100:$0.4239
    • 10:$0.5680
    • 1:$0.6600
    NTMD4184PFR2G
    DISTI # NTMD4184PFR2GOSTR-ND
    ON SemiconductorMOSFET P-CH 30V 2.3A 8-SOIC
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape & Reel (TR)
    On Order
    • 25000:$0.1882
    • 12500:$0.1984
    • 5000:$0.2132
    • 2500:$0.2278
    NTMD4184PFR2G
    DISTI # NTMD4184PFR2G
    ON SemiconductorTrans MOSFET P-CH 30V 4A 8-Pin SOIC N T/R (Alt: NTMD4184PFR2G)
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape and Reel
    Europe - 2500
    • 25000:€0.1769
    • 15000:€0.1899
    • 10000:€0.2059
    • 5000:€0.2249
    • 2500:€0.2749
    NTMD4184PFR2G
    DISTI # NTMD4184PFR2G
    ON SemiconductorTrans MOSFET P-CH 30V 4A 8-Pin SOIC N T/R (Alt: NTMD4184PFR2G)
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape and Reel
    Asia - 0
    • 125000:$0.2295
    • 62500:$0.2333
    • 25000:$0.2414
    • 12500:$0.2500
    • 7500:$0.2593
    • 5000:$0.2692
    • 2500:$0.2800
    NTMD4184PFR2G
    DISTI # NTMD4184PFR2G
    ON SemiconductorTrans MOSFET P-CH 30V 4A 8-Pin SOIC N T/R - Tape and Reel (Alt: NTMD4184PFR2G)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel
    Americas - 0
    • 25000:$0.1719
    • 15000:$0.1769
    • 10000:$0.1789
    • 5000:$0.1809
    • 2500:$0.1829
    NTMD4184PFR2G.
    DISTI # 29AC9058
    ON SemiconductorContinuous Drain Current Id:4A,Drain Source Voltage Vds:30V,Operating Temperature Max:150°C,Product Range:-,Automotive Qualification Standard:-,MSL:- RoHS Compliant: Yes0
    • 25000:$0.1720
    • 15000:$0.1770
    • 10000:$0.1790
    • 5000:$0.1810
    • 1:$0.1830
    NTMD4184PFR2G
    DISTI # 863-NTMD4184PFR2G
    ON SemiconductorMOSFET PFET FTKY S08 30V TR 3.8A
    RoHS: Compliant
    2048
    • 1:$0.6100
    • 10:$0.5060
    • 100:$0.3090
    • 1000:$0.2390
    • 2500:$0.2030
    • 10000:$0.1900
    • 25000:$0.1800
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    可用性
    ストック:
    Available
    注文中:
    2500
    数量を入力してください:
    NTMD4184PFR2Gの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
    参考価格(USD)
    単価
    小計金額
    1
    $0.61
    $0.61
    10
    $0.51
    $5.06
    100
    $0.31
    $30.90
    1000
    $0.24
    $239.00
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