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| モデル | メーカー | 説明 | ストック | 価格 |
|---|---|---|---|---|
| SI4931DY-T1-GE3 DISTI # V72:2272_09216664 | Vishay Intertechnologies | Trans MOSFET P-CH 12V 6.7A 8-Pin SOIC N T/R RoHS: Compliant | 2425 |
|
| SI4931DY-T1-E3 DISTI # V72:2272_09216662 | Vishay Intertechnologies | Trans MOSFET P-CH 12V 6.7A 8-Pin SOIC N T/R RoHS: Compliant | 172 |
|
| SI4931DY-T1-E3 DISTI # V36:1790_09216662 | Vishay Intertechnologies | Trans MOSFET P-CH 12V 6.7A 8-Pin SOIC N T/R RoHS: Compliant | 0 |
|
| SI4931DY-T1-GE3 DISTI # V36:1790_09216664 | Vishay Intertechnologies | Trans MOSFET P-CH 12V 6.7A 8-Pin SOIC N T/R RoHS: Compliant | 0 |
|
| SI4931DY-T1-E3 DISTI # SI4931DY-T1-E3CT-ND | Vishay Siliconix | MOSFET 2P-CH 12V 6.7A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 23857In Stock |
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| SI4931DY-T1-E3 DISTI # SI4931DY-T1-E3DKR-ND | Vishay Siliconix | MOSFET 2P-CH 12V 6.7A 8-SOICs RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 23857In Stock |
|
| SI4931DY-T1-E3 DISTI # SI4931DY-T1-E3TR-ND | Vishay Siliconix | MOSFET 2P-CH 12V 6.7A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | 22500In Stock |
|
| SI4931DY-T1-GE3 DISTI # SI4931DY-T1-GE3CT-ND | Vishay Siliconix | MOSFET 2P-CH 12V 6.7A 8SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 19738In Stock |
|
| SI4931DY-T1-GE3 DISTI # SI4931DY-T1-GE3DKR-ND | Vishay Siliconix | MOSFET 2P-CH 12V 6.7A 8SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 19738In Stock |
|
| SI4931DY-T1-GE3 DISTI # SI4931DY-T1-GE3TR-ND | Vishay Siliconix | MOSFET 2P-CH 12V 6.7A 8SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | 17500In Stock |
|
| SI4931DY-T1-GE3 DISTI # 33359995 | Vishay Intertechnologies | Trans MOSFET P-CH 12V 6.7A 8-Pin SOIC N T/R RoHS: Compliant | 2425 |
|
| SI4931DY-T1-E3 DISTI # 31920003 | Vishay Intertechnologies | Trans MOSFET P-CH 12V 6.7A 8-Pin SOIC N T/R RoHS: Compliant | 172 |
|
| SI4931DY-T1-E3 DISTI # SI4931DY-T1-E3 | Vishay Intertechnologies | Trans MOSFET P-CH 12V 6.7A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4931DY-T1-E3) RoHS: Not Compliant Min Qty: 2500 Container: Reel | Americas - 0 |
|
| SI4931DY-T1-E3 DISTI # SI4931DY-T1-E3 | Vishay Intertechnologies | Trans MOSFET P-CH 12V 6.7A 8-Pin SOIC N T/R (Alt: SI4931DY-T1-E3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel | Europe - 0 |
|
| SI4931DY-T1-GE3 DISTI # SI4931DY-T1-GE3 | Vishay Intertechnologies | Trans MOSFET P-CH 12V 6.7A 8-Pin SOIC N T/R (Alt: SI4931DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel | Europe - 0 |
|
| SI4931DY-T1-GE3 DISTI # SI4931DY-T1-GE3 | Vishay Intertechnologies | Trans MOSFET P-CH 12V 6.7A 8-Pin SOIC N T/R (Alt: SI4931DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel | Asia - 0 | |
| SI4931DY-T1-GE3 DISTI # SI4931DY-T1-GE3 | Vishay Intertechnologies | Trans MOSFET P-CH 12V 6.7A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4931DY-T1-GE3) RoHS: Not Compliant Min Qty: 2500 Container: Reel | Americas - 0 |
|
| SI4931DY-T1-E3 DISTI # 57J5686 | Vishay Intertechnologies | DUAL P CHANNEL MOSFET, -12V, SOIC, FULL REEL,Transistor Polarity:Dual P Channel,Continuous Drain Current Id:-8.9A,Drain Source Voltage Vds:-12V,On Resistance Rds(on):0.028ohm,Rds(on) Test Voltage Vgs:12V,No. of Pins:8Pins RoHS Compliant: Yes | 0 |
|
| SI4931DY-T1-GE3 DISTI # 15R5125 | Vishay Intertechnologies | DUAL P-CHANNEL 12-V (D-S) MOSFET | 0 |
|
| SI4931DY-T1-GE3 DISTI # 781-SI4931DY-GE3 | Vishay Intertechnologies | MOSFET -12V Vds 8V Vgs SO-8 RoHS: Compliant | 7172 |
|
| SI4931DY-T1-E3 DISTI # 781-SI4931DY-T1-E3 | Vishay Intertechnologies | MOSFET -12V Vds 8V Vgs SO-8 RoHS: Compliant | 7629 |
|
| SI4931DYT1GE3 | Vishay Intertechnologies | Small Signal Field-Effect Transistor, 6.7A I(D), 12V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 560 | |
| SI4931DY-T1-E3 | Vishay Intertechnologies | MOSFET -12V Vds 8V Vgs SO-8 | Americas - | |
| SI4931DY-T1-GE3 | Vishay Intertechnologies | MOSFET -12V Vds 8V Vgs SO-8 RoHS: Compliant | Americas - |
| 画像 | モデル | 説明 |
|---|---|---|
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Mfr.#: SI4963BDY-T1-GE3 OMO.#: OMO-SI4963BDY-T1-GE3 |
MOSFET 20V 6.5A 2.0W 32mohm @ 4.5V |
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Mfr.#: SI4914BDY-T1-E3 OMO.#: OMO-SI4914BDY-T1-E3-VISHAY |
RF Bipolar Transistors MOSFET 30V 8.4/8.0A 2.1/3.1 |
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Mfr.#: SI4922BDY-T1-GE3 OMO.#: OMO-SI4922BDY-T1-GE3-VISHAY |
RF Bipolar Transistors MOSFET 30V 8.0A 3.1W 16mohm @ 10V |
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Mfr.#: SI4902DY OMO.#: OMO-SI4902DY-1190 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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Mfr.#: SI4908DY-T1-E3 OMO.#: OMO-SI4908DY-T1-E3-VISHAY |
MOSFET 2N-CH 40V 5A 8-SOIC |
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Mfr.#: SI4909DY-T1-E3 OMO.#: OMO-SI4909DY-T1-E3-1190 |
ブランドニューオリジナル |
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Mfr.#: SI4935 OMO.#: OMO-SI4935-1190 |
ブランドニューオリジナル |
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Mfr.#: SI4948B OMO.#: OMO-SI4948B-1190 |
ブランドニューオリジナル |
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Mfr.#: SI4948EY-E3 OMO.#: OMO-SI4948EY-E3-1190 |
MOSFET 60V 3.1A 2.4W |
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Mfr.#: SI4948EY-T1-E3 OMO.#: OMO-SI4948EY-T1-E3-1190 |
ブランドニューオリジナル |