IRF7904PBF

Mfr. #:: IRF7904PBF
メーカー:: Infineon Technologies
説明:: MOSFET 2N-CH 30V 7.6A/11A 8SOIC
ライフサイクル:: メーカー新製品
データシート:: IRF7904PBF データシート
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ECAD Model:

製品属性
属性値

メーカー: インフィニオンテクノロジーズ

製品カテゴリ: FET-アレイ

シリーズ: HEXFETR

包装: チューブ代替包装

単位重量: 0.019048 oz

取り付けスタイル: SMD / SMT

パッケージ-ケース: 8-SOIC (0.154", 3.90mm Width)

テクノロジー: Si

作動温度: -55°C ~ 150°C (TJ)

取付タイプ: 表面実装

チャネル数: 2 Channel

サプライヤー-デバイス-パッケージ: 8-SO

構成: デュアル

FETタイプ: 2 N-Channel (Dual)

パワーマックス: 1.4W, 2W

トランジスタタイプ: 2 N-Channel

Drain-to-Source-Voltage-Vdss: 30V

入力-静電容量-Ciss-Vds: 910pF @ 15V

FET機能: ロジックレベルゲート

Current-Continuous-Drain-Id-25°C: 7.6A, 11A

Rds-On-Max-Id-Vgs: 16.2 mOhm @ 7.6A, 10V

Vgs-th-Max-Id: 2.25V @ 25μA

ゲートチャージ-Qg-Vgs: 11nC @ 4.5V

Pd-電力損失: 1.4 W

Vgs-Gate-Source-Voltage: 20 V

Id-連続-ドレイン-電流: 11 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 30 V

Rds-On-Drain-Source-Resistance: 13 mOhms

トランジスタ-極性: Nチャネル

Qg-Gate-Charge: 14 nC

Tags: IRF7904, IRF790, IRF79, IRF7, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF7904PBF 説明

***ied Electronics & Automation: MOSFET, Power;N-Ch;VDSS 30V;ID 7.6 A (Control FET), 11 A (Synchronous FET);SO-8

***ical: Trans MOSFET N-CH 30V 7.6A/11A 8-Pin SOIC T/R

***ernational Rectifier: 30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package

***Components: MOSFET Dual N-Channel 30V 7.6A/11A SOIC8

***th Star Micro: MOSFET N-CHAN DUAL 30V 8-SOIC

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:11A; On Resistance, Rds(on):10.8mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:SO-8 ;RoHS Compliant: Yes

***nell: MOSFET, NN CH, 30VSO8; Module Configuration:Dual; Transistor Polarity:N Channel; Current Id Max:11A; Drain Source Voltage Vds:30V; On State Resistance:8.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.25V; Power Dissipation:2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8

***ment14 APAC: MOSFET, NN CH, 30VSO8; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.25V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:11A; Drain Source Voltage Vds:30V; Module Configuration:Dual; On Resistance Rds(on):8.6mohm; Power Dissipation Pd:2W

Market price

モデル	メーカー	説明	ストック	価格
IRF7904PBF DISTI # IRF7904PBF-ND	Infineon Technologies AG	MOSFET 2N-CH 30V 7.6A/11A 8SOIC RoHS: Compliant Min Qty: 1 Container: Tube	2988In Stock	1045:$0.4158 570:$0.5267 190:$0.6792 95:$0.7762 1:$0.9700
IRF7904PBF DISTI # 70017284	Infineon Technologies AG	MOSFET,Power,N-Ch,VDSS 30V,ID 7.6 A (Control FET),11 A (Synchronous FET),SO-8 RoHS: Compliant	0	3800:$1.4200 7600:$1.3920 19000:$1.3490 38000:$1.2920 95000:$1.2070
IRF7904PBF DISTI # 942-IRF7904PBF	Infineon Technologies AG	MOSFET 30V DUAL N-CH HEXFET 30V VGS MAX RoHS: Compliant	2	1:$1.4200 10:$0.7190 100:$0.6050 500:$0.5720 1000:$0.5350 2500:$0.4920 10000:$0.4690
IRF7904PBF	International Rectifier	RoHS: Compliant	Europe - 380

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