IPB019N06L3 G

IPB019N06L3 G
Mfr. #:
IPB019N06L3 G
メーカー:
Infineon Technologies
説明:
Trans MOSFET N-CH 60V 120A 3-Pin(2+Tab) TO-263
ライフサイクル:
メーカー新製品
データシート:
IPB019N06L3 G データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
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ECAD Model:
詳しくは:
IPB019N06L3 G 詳しくは
製品属性
属性値
メーカー
インフィニオンテクノロジーズ
製品カテゴリ
トランジスタ-FET、MOSFET-シングル
シリーズ
OptiMOS 3
包装
リール
パーツエイリアス
IPB019N06L3GATMA1 IPB019N06L3GXT SP000453020
単位重量
0.068654 oz
商標名
OptiMOS
パッケージ-ケース
TO-263-3
テクノロジー
Si
チャネル数
1 Channel
構成
独身
トランジスタタイプ
1 N-Channel
Pd-電力損失
250 W
最高作動温度
+ 175 C
最低作動温度
- 55 C
立ち下がり時間
38 ns
立ち上がり時間
79 ns
Vgs-Gate-Source-Voltage
20 V
Id-連続-ドレイン-電流
120 A
Vds-ドレイン-ソース-ブレークダウン-電圧
60 V
Rds-On-Drain-Source-Resistance
1.9 mOhms
トランジスタ-極性
Nチャネル
典型的なターンオフ遅延時間
131 ns
典型的なターンオン遅延時間
35 ns
チャネルモード
強化
Tags
IPB019N06L3G, IPB019N06L3, IPB019N06L, IPB019N06, IPB019, IPB01, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
モデル メーカー 説明 ストック 価格
IPB019N06L3GATMA1
DISTI # V72:2272_06377428
Infineon Technologies AGTrans MOSFET N-CH 60V 120A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
977
  • 500:$2.5240
  • 250:$2.8110
  • 100:$2.9590
  • 25:$3.0720
  • 10:$3.4130
  • 1:$4.4143
IPB019N06L3GATMA1
DISTI # V36:1790_06377428
Infineon Technologies AGTrans MOSFET N-CH 60V 120A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
0
  • 1000000:$1.8500
  • 500000:$1.8520
  • 100000:$1.9880
  • 10000:$2.2080
  • 1000:$2.2440
IPB019N06L3GATMA1
DISTI # IPB019N06L3GATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 60V 120A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
1792In Stock
  • 500:$2.7405
  • 100:$3.2193
  • 10:$3.9290
  • 1:$4.3700
IPB019N06L3GATMA1
DISTI # IPB019N06L3GATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 60V 120A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
1792In Stock
  • 500:$2.7405
  • 100:$3.2193
  • 10:$3.9290
  • 1:$4.3700
IPB019N06L3GATMA1
DISTI # IPB019N06L3GATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 60V 120A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
1000In Stock
  • 2000:$2.1318
  • 1000:$2.2440
IPB019N06L3GATMA1
DISTI # 33709822
Infineon Technologies AGTrans MOSFET N-CH 60V 120A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
977
  • 3:$4.4143
IPB019N06L3 G
DISTI # 31073238
Infineon Technologies AGTrans MOSFET N-CH 60V 120A 3-Pin(2+Tab) TO-263
RoHS: Compliant
78
  • 5:$5.2375
IPB019N06L3GXT
DISTI # IPB019N06L3GATMA1
Infineon Technologies AGTrans MOSFET N-CH 60V 120A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB019N06L3GATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 6000:$1.8900
  • 10000:$1.8900
  • 4000:$1.9900
  • 1000:$2.0900
  • 2000:$2.0900
IPB019N06L3GATMA1
DISTI # SP000453020
Infineon Technologies AGTrans MOSFET N-CH 60V 120A 3-Pin TO-263 T/R (Alt: SP000453020)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel
Europe - 0
  • 10000:€1.5900
  • 6000:€1.6900
  • 2000:€1.8900
  • 4000:€1.8900
  • 1000:€1.9900
IPB019N06L3GATMA1
DISTI # 47Y8046
Infineon Technologies AGMOSFET Transistor, N Channel, 120 A, 60 V, 0.0016 ohm, 10 V, 1.7 V RoHS Compliant: Yes0
    IPB019N06L3 G
    DISTI # 726-IPB019N06L3G
    Infineon Technologies AGMOSFET N-Ch 60V 120A D2PAK-2 OptiMOS 3
    RoHS: Compliant
    1050
    • 1:$4.0400
    • 10:$3.4300
    • 100:$2.9700
    • 250:$2.8200
    • 500:$2.5300
    • 1000:$2.1300
    • 2000:$2.0300
    IPB019N06L3GATMA1
    DISTI # 726-IPB019N06L3GATMA
    Infineon Technologies AGMOSFET N-Ch 60V 120A D2PAK-2 OptiMOS 3
    RoHS: Compliant
    1639
    • 1:$4.0400
    • 10:$3.4300
    • 100:$2.9700
    • 250:$2.8200
    • 500:$2.5300
    • 1000:$2.1300
    • 2000:$2.0300
    IPB019N06L3GATMA1
    DISTI # 8275293P
    Infineon Technologies AGMOSFET N-CH 120A 60V OPTIMOS3 TO263, RL1440
    • 100:£2.0380
    • 50:£2.3480
    IPB019N06L3GATMA1
    DISTI # IPB019N06L3GATMA1
    Infineon Technologies AGTransistor: N-MOSFET,unipolar,60V,120A,250W,PG-TO263-3683
    • 100:$2.4550
    • 10:$2.8267
    • 3:$3.1983
    • 1:$3.5474
    IPB019N06L3GATMA1
    DISTI # 2443430
    Infineon Technologies AGMOSFET, N CH, 60V, 120A, TO-263-3
    RoHS: Compliant
    0
    • 1000:$3.2100
    • 500:$3.8100
    • 250:$4.2500
    • 100:$4.4800
    • 10:$5.1700
    • 1:$6.0900
    画像 モデル 説明
    IPB019N08N3 G

    Mfr.#: IPB019N08N3 G

    OMO.#: OMO-IPB019N08N3-G

    MOSFET N-Ch 80V 180A D2PAK-6 OptiMOS 3
    IPB019N08N5ATMA1

    Mfr.#: IPB019N08N5ATMA1

    OMO.#: OMO-IPB019N08N5ATMA1-1190

    DIFFERENTIATED MOSFETS
    IPB019N06

    Mfr.#: IPB019N06

    OMO.#: OMO-IPB019N06-1190

    ブランドニューオリジナル
    IPB019N06L3

    Mfr.#: IPB019N06L3

    OMO.#: OMO-IPB019N06L3-1190

    ブランドニューオリジナル
    IPB019N06L3G

    Mfr.#: IPB019N06L3G

    OMO.#: OMO-IPB019N06L3G-1190

    ブランドニューオリジナル
    IPB019N06L3GATMA1

    Mfr.#: IPB019N06L3GATMA1

    OMO.#: OMO-IPB019N06L3GATMA1-INFINEON-TECHNOLOGIES

    MOSFET N-CH 60V 120A TO263-3
    IPB019N08N

    Mfr.#: IPB019N08N

    OMO.#: OMO-IPB019N08N-1190

    ブランドニューオリジナル
    IPB019N08N3 G

    Mfr.#: IPB019N08N3 G

    OMO.#: OMO-IPB019N08N3-G-1190

    MOSFET N-Ch 80V 180A D2PAK-6 OptiMOS 3
    IPB019N08N3GATMA1

    Mfr.#: IPB019N08N3GATMA1

    OMO.#: OMO-IPB019N08N3GATMA1-INFINEON-TECHNOLOGIES

    MOSFET N-CH 80V 180A TO263-7
    IPB019N08N3GS

    Mfr.#: IPB019N08N3GS

    OMO.#: OMO-IPB019N08N3GS-1190

    ブランドニューオリジナル
    可用性
    ストック:
    Available
    注文中:
    2500
    数量を入力してください:
    IPB019N06L3 Gの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
    参考価格(USD)
    単価
    小計金額
    1
    $3.04
    $3.04
    10
    $2.89
    $28.93
    100
    $2.74
    $274.05
    500
    $2.59
    $1 294.15
    1000
    $2.44
    $2 436.00
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